Thin metal-organic framework film

Patent metadata

Field	Value
Publication number	US-10767263-B2
Application number	US-201816118875-A
Country	US
Kind code	B2
Filing date	Aug 31, 2018
Priority date	Apr 30, 2014
Publication date	Sep 8, 2020
Grant date	Sep 8, 2020

Abstract

A method of producing a metal-organic framework (MOF) film on a substrate is provided. The method includes providing a substrate having a main surface and forming on the main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of the organometallic compound precursor and the at least one organic ligand is provided only in the vapour phase.

First claim

The invention claimed is:

1. A substrate structure comprising:
a substrate having a main surface;
a metal organic framework (MOF) film on said main surface, wherein said MOF film has a thickness range of 1 nm to 250 nm and is pin-hole free; and
a conformal layer of a dielectric material, wherein the conformal layer is positioned between the main surface of the substrate and the MOF film and wherein the conformal layer of dielectric material comprises an oxide layer.

2. The substrate structure according to claim 1 , wherein said substrate structure further comprises a stack consisting of layers of MOF films and layers of materials having a refractive index higher than 1.4, wherein each layer of said MOF film is disposed alternating with each layer of said materials having a refractive index higher than 1.4.

3. The substrate structure according to claim 1 , wherein said substrate is a Si substrate.

4. The substrate structure according to claim 1 , wherein said substrate is a bulk Si substrate.

5. The substrate structure according to claim 1 , wherein the conformal layer of the dielectric material is deposited by Atomic Lay Deposition (ALD).

6. The substrate structure according to claim 1 , wherein the oxide layer is an electrical conductor.

7. The substrate structure according to claim 1 , wherein the oxide layer is an electrical insulator.

8. The substrate structure according to claim 1 , wherein the oxide layer is an ionic conductor.

9. The substrate structure according to claim 1 , wherein the oxide layer comprises a metal oxide.

10. The substrate structure according to claim 9 , wherein the metal oxide is selected from TiO 2 , SiO 2 and Al 2 O 3 .

11. The substrate structure according to claim 1 , wherein a thickness of the conformal layer of the dielectric material ranges from 2 nm to 40 nm.

12. The substrate structure according to claim 1 , wherein the main surface of the substrate further comprises a plurality of indentations.

13. The substrate structure according to claim 1 , wherein the main surface of the substrate further comprises a plurality of protrusions.

14. The substrate structure according to claim 13 , wherein the protrusions are made of material that is the same as the substrate.

15. The substrate structure according to claim 13 , wherein the protrusions are made of material that is different from the substrate.

16. The substrate structure according to claim 15 , wherein the protrusions are pillars, metal nanowires, semiconductor nanowires, carbon nanotubes or carbon nano-sheets.

17. The substrate structure according to claim 13 , wherein the protrusions are free-standing or connected.

18. The substrate structure according to claim 13 , wherein the protrusions have a geometrical three dimensional shape.

19. A substrate structure comprising:
a substrate having a main surface; and
a metal organic framework (MOF) film on said main surface, wherein said MOF film has a thickness range of 1 nm to 250 nm and is pin-hole free,
wherein said substrate structure further comprises a stack consisting of layers of MOF films and layers of materials having a refractive index higher than 1.4, wherein each layer of said MOF film is disposed alternating with each layer of said materials having a refractive index higher than 1.4.

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Stassen Ivo
• Ameloot Rob
• De Vos Dirk
• Vereecken Philippe M

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/665

  Porous materials · CPC title

• C23C16/407 Primary

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title