System and method for making quantum dots

Patent metadata

Field	Value
Publication number	US-10767110-B2
Application number	US-201815966078-A
Country	US
Kind code	B2
Filing date	Apr 30, 2018
Priority date	Oct 4, 2013
Publication date	Sep 8, 2020
Grant date	Sep 8, 2020

Abstract

Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

First claim

What is claimed:

1. A system for making a quantum dot (QD), comprising:
a mixing device for receiving solution A and solution B, wherein the mixing device is configured to mix solution A and solution B to form solution C;
a first coil in fluidic communication with the mixing device, wherein the first coil is configured to form QD seeds from solution C via nucleation and is connected to a first thermocouple configured for a first temperature; and
a second coil positioned in serial communication with the first coil, wherein the second coil is in fluidic communication with the first coil and directly attached to the first coil, wherein the second coil is configured to grow the QDs from the QD seeds and is connected to a second thermocouple configured for a second temperature, wherein the second temperature is lower than the first temperature,
wherein the first coil and the second coil are independent of one another.

2. The system of claim 1 , wherein the system is a continuous flow process system.

3. The system of claim 1 , wherein the mixing device is one or more of a mixing chip or heating column.

4. The system of claim 1 , wherein the first temperature is about 110 to 130° C.

5. The system of claim 1 , wherein the second temperature is about 70 to 90° C.

6. The system of claim 1 , further comprising one or more containers in fluidic communication with the mixing device.

7. The system of claim 1 , further comprising:
an introduction port positioned after the second coil to introduce a solution to the QDs; and
a third coil positioned in serial communication with the second coil, wherein the first coil, the second coil, and the third coil are independent of one another.

8. The system of claim 7 , wherein the injection port is configured to introduce CdCl 2 TBAI, CO, tetrabutylammonium bromide, tetrabutylammonium chloride, inorganic halides, pseudohalides, halometallate ligands, or a combination thereof.

9. The system of claim 7 , wherein the third coil is configured to passivate the QDs.

10. The system of claim 7 , wherein the third coil is operated at a third temperature.

11. The system of claim 7 , wherein one or more of the first coil, second coil, and third coil are made of one or more of Teflon, PFA, PTFE, FEP, PVDF, and ETFE.

12. The system of claim 1 , further comprising a collection device for collecting QDs.

13. The system of claim 12 , wherein the collection device is configured to one or more of separate, rinse, and wash QDs.

14. The system of claim 1 , wherein one or more of temperature and residence time may be adjusted to vary a size of QDs.

15. The system of claim 7 , wherein the second coil is longer than the first coil and the third coil is shorter than the first coil.

16. The system of claim 1 , wherein solution C comprises a solution of QD precursors and an inert immiscible fluid and the mixing device is configured to segment flow of the QD precursors into droplets of the solution within the inert immiscible fluid.

17. The system of claim 16 , wherein one or more of solution A and solution B include a fluorinated fluid in the inert immiscible fluid.

18. The system of claim 17 , wherein the fluorinated fluid is one or more of C 15 F 33 N, C 18 H 39 N, FC-70, FC-71, and FC-770.

19. The system of claim 10 , wherein the third temperature is about 30 to about 70° C.

20. The system of claim 10 , wherein each of the first temperature, second temperature, and third temperature are different.

Assignees

• Univ King Abdullah Sci & Tech

Inventors

• Bakr Osman M
• Pan Jun
• El-Ballouli Ala'A
• Knudsen Kristian Rahbek
• Abdelhady Ahmed L

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/265 Primary

  using solutions · CPC title

• C01G51/15

  Sulfides; Oxysulfides · CPC title

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title