OLED device with buffer layer adjacent light emitting layer

US10763448B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10763448-B2
Application numberUS-201816117781-A
CountryUS
Kind codeB2
Filing dateAug 30, 2018
Priority dateOct 16, 2017
Publication dateSep 1, 2020
Grant dateSep 1, 2020

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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This application relates to an OLED device, a manufacturing method thereof, and a display device. The OLED device includes a light emitting unit between an anode and a cathode. The light-emitting unit includes: a first carrier function layer for migration of first carriers, the first carrier function layer including a first material layer; a second carrier function layer for migration of second carriers having a polarity different from that of the first carriers, the second carrier function layer including a second material layer; a light emitting layer between the first material layer and the second material layer, the light emitting layer including a luminescent material; a first buffer layer between the light emitting layer and the first material layer. The first buffer layer is a mixed layer containing the luminescent material and the first material.

First claim

Opening claim text (preview).

What is claimed is: 1. An OLED device comprising a light emitting unit between an anode and a cathode, the light emitting unit comprising: a first carrier function layer for migration of first carriers, the first carrier function layer comprising a first carrier injecting layer, a first carrier transporting layer and a first material layer having a first material, wherein the first material comprises a first blocking material for blocking second carriers, and the first carrier injecting layer comprises a material of Dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitride; the second carrier function layer for migration of second carriers having a polarity different from that of the first carriers, the second carrier function layer comprising a second carrier injecting layer, a second carrier transporting layer and a second material layer having a second material, wherein the second material comprises a second blocking material for blocking the first carriers; a light emitting layer between the first material layer and the second material layer, the light emitting layer comprising a luminescent material of 2-methyl-9, 10-bis(naphthalen-2-yl)anthracene doped with 1-4-di[4-(N,N-diphenyl)amino]styryl-benzene, wherein doping ratio is about 3%; a first buffer layer between the light emitting layer and the first material layer, the first buffer layer being a mixed layer containing the luminescent material and the first material, wherein thickness of the first buffer layer is about 1 nm, and percentage by mass of the luminescent material in the first buffer layer is about 10%; and a second buffer layer between the light emitting layer and the second material layer, the second buffer layer being a mixed layer containing the luminescent material and the second material, wherein thickness of the second buffer layer is about 1 nm, and percentage by mass of the luminescent material in the second buffer layer is about 10%. 2. The OLED device according to claim 1 , wherein the first buffer layer is a multi-layer structure, in which content of the luminescent material gradually decreases in a direction from the light emitting layer to the first material layer. 3. The OLED device according to claim 1 , wherein the second buffer layer is a multi-layer structure in which content of the luminescent material gradually decreases in a direction from the light emitting layer to the second material layer. 4. The OLED device according to claim 1 , wherein: the first material layer comprises a second carrier blocking layer; and the second material layer comprises a first carrier blocking layer. 5. A display device comprising the OLED device according to claim 1 . 6. A method of manufacturing an OLED device, comprising forming on a substrate, an anode, a light emitting unit and a cathode, wherein forming the light emitting unit comprises: forming a first carrier function layer for migration of first carriers, the first carrier function layer comprising a first carrier injecting layer, a first carrier transporting layer and a first material layer having a first material, wherein the first material comprises a first blocking material for blocking second carriers, and the first carrier injecting layer comprises a material of Dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitride; forming a first buffer layer, which is a mixed layer containing a luminescent material of 2-methyl-9, 10-bis(naphthalen-2-yl)anthracene doped with 1-4-di-[4-(N,N-diphenyl)amino]styryl-benzene and a first material, wherein thickness of the first buffer layer is about 1 nm, and percentage by mass of the luminescent material in the first buffer layer is about 10%; forming a light emitting layer containing the luminescent material; and forming the second carrier function layer for migration of second carriers which have a polarity different from that of the first carriers, the second carrier function layer comprising a second carrier injecting layer, a second carrier transporting layer and a second material layer having a second material, wherein the second material comprises a second blocking material for blocking the first carriers, forming the light emitting unit further comprising forming a second buffer layer between the light emitting layer and the second material layer, the second buffer layer being a mixed layer containing a luminescent material and the second material, wherein thickness of the second buffer layer is about 1 nm, and percentage by mass of the luminescent material in the second buffer layer is about 10%. 7. The method according to claim 6 , wherein the first buffer layer is a multi-layer structure in which content of the luminescent material gradually decreases in a direction from the light emitting layer to the first material layer. 8. The method according to claim 6 , wherein the second buffer layer is a multi-layer structure in which content of the luminescent material gradually decreases in a direction from the light emitting layer to the second material layer. 9. The method according to claim 6 , wherein: the first material layer comprises a second carrier blocking layer; and the second material layer comprises a first carrier blocking layer.

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What does patent US10763448B2 cover?
This application relates to an OLED device, a manufacturing method thereof, and a display device. The OLED device includes a light emitting unit between an anode and a cathode. The light-emitting unit includes: a first carrier function layer for migration of first carriers, the first carrier function layer including a first material layer; a second carrier function layer for migration of second…
Who is the assignee on this patent?
Boe Technology Group Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01L51/5008. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 01 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).