Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
US10763400B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10763400-B2 |
| Application number | US-201715488322-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 14, 2017 |
| Priority date | Aug 21, 2013 |
| Publication date | Sep 1, 2020 |
| Grant date | Sep 1, 2020 |
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Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.
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What is claimed is: 1. A method of coating a semiconductor structure, the method comprising: adding a silicon-containing silica precursor species to a solution of oblong-shaped semiconductor nanocrystals; forming, subsequently, a silica-based insulator layer on the oblong-shaped semiconductor nanocrystals from a reaction involving the silicon-containing silica precursor species; and adding additional amounts of the silicon-containing silica precursor species to the solution of oblong-shaped semiconductor nanocrystals after initial forming of the silica-based insulator layer and while continuing to form the silica-based insulator layer to encapsulate each of the oblong-shaped semiconductor nanocrystals in a non-oblong-shaped silica-based insulator layer formed by two bulbous portions separated by a waist portion, the non-oblong-shaped silica-based insulator layer bonded directly to the oblong-shaped semiconductor nanocrystal. 2. The method of claim 1 , wherein adding additional amounts of the silicon-containing silica precursor species to the solution comprises using multiple discrete injections of the silicon-containing silica precursor species to the solution. 3. The method of claim 1 , wherein adding additional amounts of the silicon-containing silica precursor species comprises using a single prolonged injection of the silicon-containing silica precursor species to the solution. 4. The method of claim 1 , wherein adding the silicon-containing silica precursor species to the solution comprises adding tetraethylorthosilicate (TEOS). 5. The method of claim 1 , wherein forming, subsequently, the silica-based insulator layer comprises encapsulating the oblong-shaped semiconductor nanocrystals individually and discretely. 6. The method of claim 1 , wherein adding the silicon-containing silica precursor species to the solution comprises adding tetrapropylorthosilicate (TPOS), tetrabutlyorthosilicate (TBOS), or both. 7. The method of claim 1 , wherein continuing to form the silica-based insulator layer to encapsulate each of the oblong-shaped semiconductor nanocrystals in the non-oblong-shaped silica-based insulator layer formed by two bulbous portions separated by the waist portion comprises forming a dumbbell-shaped silica coating encapsulating each oblong-shaped semiconductor nanocrystal. 8. The method of claim 1 , wherein each oblong-shaped semiconductor nanocrystal in the solution has an anisotropic nanocrystalline core comprising a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0, and a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core.
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