Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell

US10763400B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10763400-B2
Application numberUS-201715488322-A
CountryUS
Kind codeB2
Filing dateApr 14, 2017
Priority dateAug 21, 2013
Publication dateSep 1, 2020
Grant dateSep 1, 2020

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of coating a semiconductor structure, the method comprising: adding a silicon-containing silica precursor species to a solution of oblong-shaped semiconductor nanocrystals; forming, subsequently, a silica-based insulator layer on the oblong-shaped semiconductor nanocrystals from a reaction involving the silicon-containing silica precursor species; and adding additional amounts of the silicon-containing silica precursor species to the solution of oblong-shaped semiconductor nanocrystals after initial forming of the silica-based insulator layer and while continuing to form the silica-based insulator layer to encapsulate each of the oblong-shaped semiconductor nanocrystals in a non-oblong-shaped silica-based insulator layer formed by two bulbous portions separated by a waist portion, the non-oblong-shaped silica-based insulator layer bonded directly to the oblong-shaped semiconductor nanocrystal. 2. The method of claim 1 , wherein adding additional amounts of the silicon-containing silica precursor species to the solution comprises using multiple discrete injections of the silicon-containing silica precursor species to the solution. 3. The method of claim 1 , wherein adding additional amounts of the silicon-containing silica precursor species comprises using a single prolonged injection of the silicon-containing silica precursor species to the solution. 4. The method of claim 1 , wherein adding the silicon-containing silica precursor species to the solution comprises adding tetraethylorthosilicate (TEOS). 5. The method of claim 1 , wherein forming, subsequently, the silica-based insulator layer comprises encapsulating the oblong-shaped semiconductor nanocrystals individually and discretely. 6. The method of claim 1 , wherein adding the silicon-containing silica precursor species to the solution comprises adding tetrapropylorthosilicate (TPOS), tetrabutlyorthosilicate (TBOS), or both. 7. The method of claim 1 , wherein continuing to form the silica-based insulator layer to encapsulate each of the oblong-shaped semiconductor nanocrystals in the non-oblong-shaped silica-based insulator layer formed by two bulbous portions separated by the waist portion comprises forming a dumbbell-shaped silica coating encapsulating each oblong-shaped semiconductor nanocrystal. 8. The method of claim 1 , wherein each oblong-shaped semiconductor nanocrystal in the solution has an anisotropic nanocrystalline core comprising a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0, and a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core.

Assignees

Inventors

Classifications

  • characterised by their material, e.g. binder · CPC title

  • Wavelength conversion materials · CPC title

  • non-luminescent particle coatings or suspension media · CPC title

  • Group II-VI nonoxide compounds, e.g. CdxMnyTe · CPC title

  • Chemical synthesis, e.g. chemical bonding or breaking · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10763400B2 cover?
Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystal…
Who is the assignee on this patent?
Pacific Light Tech Corp, Osram Opto Semiconductors Gmbh
What technology area does this patent fall under?
Primary CPC classification H10H20/8512. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 01 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).