Semiconductor device and repair operation method thereof

Patent metadata

Field	Value
Publication number	US-10763181-B2
Application number	US-201816129976-A
Country	US
Kind code	B2
Filing date	Sep 13, 2018
Priority date	Nov 30, 2017
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

A semiconductor device includes a plurality of first signal lines and a plurality of second signal lines which are alternately arranged adjacent to each other, wherein the first signal lines and the second signal lines comprise a plurality of main signal lines and at least one spare signal line, a first signal transmitter suitable for transmitting signals through the main signal lines of the first signal lines, and shifting a signal transmission path to adjacent signal lines among the main signal lines and the spare signal line of the first signal lines, based on repair information, and a second signal transmitter suitable for transmitting signals through the main signal lines of the second signal lines, and shifting a signal transmission path to adjacent signal lines among the main signal lines and the spare signal line of the second signal lines, based on the repair information.

First claim

What is claimed is:

1. A semiconductor device comprising:
a plurality of first signal lines and a plurality of second signal lines which are alternately arranged adjacent to each other on a first semiconductor chip, wherein the first signal lines and the second signal lines comprise a plurality of main signal lines and at least one spare signal line;
a first signal transmitter configured to transmit signals through the main signal lines of the first signal lines, and shift a signal transmission path to adjacent signal lines among the main signal lines and the spare signal line of the first signal lines, based on repair information; and
a second signal transmitter configured to transmit signals through the main signal lines of the second signal lines, and shift a signal transmission path to adjacent signal lines among the main signal lines and the spare signal line of the second signal lines, based on the repair information,
wherein each first signal line is connected to the first transmitter, beginning with an initial first signal line connected to a first end of the first transmitter,
wherein each second signal line is connected to the second transmitter, beginning with an initial second signal line connected to a first end of the second transmitter and adjacent to the initial first signal line, and
wherein each subsequent first signal line and each subsequent second signal line are alternately connected to the first transmitter and the second transmitter respectively, until a last spare signal line of the first signal lines is connected at a second end of the first transmitter opposite to the first end, and a last spare signal line of the second signal lines is connected at a second end of the second transmitter opposite to the first end.

2. The semiconductor device of claim 1 , wherein each of the first and second signal transmitters comprises:
a signal generation circuit configured to generate a plurality of select signals according to the repair information; and
a plurality of selection circuits configured to receive the select signals, and corresponding to the main signal lines and the spare signal line, respectively.

3. The semiconductor device of claim 2 , wherein the selection circuits select a signal line of a corresponding or previous stage and output a signal of the selected signal line, in response to the select signals.

4. The semiconductor device of claim 2 , wherein each of the selection circuits comprises a multiplexer operated in response to the corresponding select signal.

5. The semiconductor device of claim 1 , further comprising:
a first signal receiver configured to receive signals through the main signal lines of the first signal lines, and shift a signal reception path to adjacent signal lines among the main signal lines and the spare signal line of the first signal lines, based on the repair operation; and
a second signal receiver configured to receive signals through the main signal lines of the second signal lines, and shift a signal reception path to adjacent signal lines among the main signal lines and the spare signal line of the second signal lines, based on the repair operation.

6. The semiconductor device of claim 5 , wherein each of the first and second signal receivers comprises:
a signal generation circuit suitable for generating a plurality of select signals according to the repair information; and
a plurality of selection circuits suitable for receiving the select signals, and corresponding to the main signal lines, respectively.

7. The semiconductor device of claim 6 , wherein the selection circuit selects a signal line of a corresponding or following stage and receives a signal of the selected line, in response to the select signals.

8. The semiconductor device of claim 1 ,
wherein the semiconductor device includes a semiconductor package having a plurality of bumps corresponding to the first and second signal lines, and
wherein the repair information comprises information on a defective bump among the plurality of bumps.

9. The semiconductor device of claim 1 , further comprising:
a plurality of semiconductor chips stacked to transmit and receive signals through the first and second signal lines,
wherein each of the semiconductor chips includes a plurality of through-electrodes corresponding to the first and second signal lines, respectively.

10. The semiconductor device of claim 9 , wherein the repair information comprises information on a defective through-electrode among the plurality of through-electrodes.

11. A semiconductor device comprising:
a plurality of first through-electrodes passing through a first semiconductor chip;
a plurality of second through-electrodes passing through the first semiconductor chip and arranged alternately adjacent to the first through-electrodes, wherein the first through-electrodes and the second through-electrodes comprise N main through-electrodes and at least one spare through-electrode, where N is a natural number;
a first signal transmitter configured to transmit first output signals of the first semiconductor chip through the main through-electrodes of the first through-electrodes, respectively, and transmit the Kth to last output signals among the first output signals through the (K+1)th to Nth main through-electrodes and the spare through-electrode, respectively, when the Kth main through-electrode has a defect, among the first through-electrodes, where K is a natural number smaller than or equal to N; and
a second signal transmitter configured to transmit second output signals of the first semiconductor chip through the main through-electrodes of the second through-electrodes, respectively, and transmit the Kth to last output signals among the second output signals through the (K+1)th to Nth main through-electrodes and the spare through-electrode, when the Kth main through-electrode has a defect, among the second through-electrodes.

12. The semiconductor device of claim 11 , wherein the first signal transmitter comprises:
a signal generation circuit configured to generate a plurality of select signals according to repair information; and
a plurality of selection circuits configured to receive the select signals, and corresponding to the main through-electrodes and the spare through-electrode of the first through-electrodes, respectively.

13. The semiconductor device of claim 12 , wherein the selection circuits select and output an output signal of a corresponding or previous order among the first output signals, in response to the select signals.

14. The semiconductor device of claim 12 , wherein when the Kth main through-electrode has the defect, the signal generation circuit activates the first to Kth select signals and deactivates the (K+1)th to last select signals, among the select signals.

15. The semiconductor device of claim 14 , wherein the (K+1)th to last selection circuits among the selection circuits output the Kth to last output signals to the (K+1)th to Nth main through-electrodes and the spare through-electrode, respectively, in response to the deactivated (K+1)th to last select signals.

16. The semiconductor device of claim 14 , wherein the first to Kth selection circuits among the selection circuits output the first to Kth output signals among the first output signals to the first to Kth main through-electrodes among the main through-electrodes, respectively, in response to the activated first to Kth select signals.

17. The semiconductor device of claim 11 , further comprising:
a first signal receiver configured to receive first input signals of the fir

Assignees

• Sk Hynix Inc

Inventors

• Byun Hee-Jin
• Song Ho-Uk
• Hwang Sun-Young

Classifications

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W72/247

  Dispositions of multiple bumps · CPC title

• H10W72/07254

  changes in dispositions · CPC title

• H10W90/722

  between stacked chips · CPC title