US10760180B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10760180-B2 |
| Application number | US-201715785895-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2017 |
| Priority date | Oct 18, 2016 |
| Publication date | Sep 1, 2020 |
| Grant date | Sep 1, 2020 |
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A polycrystalline silicon ingot having a value of T e −T s , ΔT, of 50° C. or less, wherein T s and T e are the onset temperature and the completion temperature of melting, respectively, when the temperature is increased at a rate of 60° C./minute or less in the temperature range of 1400° C. or more is used as the production raw material for single crystal silicon. The present invention provides a polycrystalline silicon ingot or polycrystalline silicon rod suitable for stably producing single crystal silicon.
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What is claimed is: 1. A method for producing single crystal silicon, comprising: subjecting a polycrystalline silicon ingot as a raw material to a CZ process or a FZ process for producing single crystalline silicon, wherein the polycrystalline silicon ingot has a value of T e −T s , ΔT, of 50° C. or less, wherein T s and T e are the onset temperature and the completion temperature of melting in the CZ process or the FZ process, respectively, when the temperature is increased at a rate of 60° C./minute or less in a temperature range of 1400° C. or more, wherein the polycrystalline silicon ingot is consistently grown under a condition that the deposition rate is 7 μm/minute or more. 2. The method for producing single crystal silicon according to claim 1 , wherein the polycrystalline silicon ingot is a polycrystalline silicon ingot extracted from a polycrystalline silicon rod synthesized by the Siemens method. 3. A method for producing single crystal silicon, comprising: subjecting a polycrystalline silicon rod as a raw material to a CZ process or a FZ process for producing single crystalline silicon, wherein a polycrystalline silicon ingot extracted from any portion of the polycrystalline silicon rod has a value of T e −T s , ΔT, of 50° C. or less, wherein T s and T e are the onset temperature and the completion temperature of melting in a CZ process or a FZ process for producing single crystalline silicon, respectively, when the temperature is increased at a rate of 60° C./minute or less in a temperature range of 1400° C. or more, wherein the polycrystalline silicon ingot is consistently grown under a condition that the deposition rate is 7 μm/minute or more. 4. A method of selecting polycrystalline silicon ingot for producing single crystal silicon, comprising: selecting a polycrystalline silicon ingot having a value of T e −T s , ΔT, of 50° C. or less, wherein T s and T e are the onset temperature and the completion temperature of melting in the CZ process or the FZ process, respectively, when the temperature is increased at a rate of 60° C./minute or less in a temperature range of 1400° C. or more, and subjecting the polycrystalline silicon ingot as a raw material to a CZ process or a FZ process for producing single crystalline silicon, wherein the polycrystalline silicon ingot is consistently grown under a condition that the deposition rate is 7 μm/minute or more. 5. The method of selecting a polycrystalline silicon ingot for producing single crystal silicon according to claim 4 , wherein the polycrystalline silicon ingot is a polycrystalline silicon ingot extracted from a polycrystalline silicon rod synthesized by the Siemens method. 6. A method of selecting polycrystalline silicon rod for producing single crystal silicon, comprising: selecting a polycrystalline rod such that a polycrystalline silicon ingot extracted from any portion of the polycrystalline silicon rod has a value of T e −T s , ΔT, of 50° C. or less, wherein T s and T e are the onset temperature and the completion temperature of melting in a CZ process or a FZ process for producing single crystalline silicon, respectively, when the temperature is increased at a rate of 60° C./minute or less in a temperature range of 1400° C. or more, and subjecting the polycrystalline silicon rod as a raw material to a CZ process or a FZ process for producing single crystalline silicon, wherein the polycrystalline silicon ingot is consistently grown under a condition that the deposition rate is 7 μm/minute or more.
by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process · CPC title
Silicon · CPC title
Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title
characterised by the seed, e.g. by its crystallographic orientation · CPC title
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