Adhesive composition for semiconductor, adhesive film for semiconductor, and dicing die bonding film

Patent metadata

Field	Value
Publication number	US-10759971-B2
Application number	US-201615313441-A
Country	US
Kind code	B2
Filing date	Apr 29, 2016
Priority date	Apr 29, 2015
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

The present invention relates to an adhesive composition for a semiconductor including: a thermoplastic resin having a glass transition temperature of −10° C. to 20° C.; a curing agent containing a phenol resin having a softening point of 70° C. or more; a solid epoxy resin; and a liquid epoxy resin, wherein a weight ratio of the total contents of the solid epoxy resin and the liquid epoxy resin to the thermoplastic resin is 1.6 to 2.6, an adhesive film for a semiconductor including the adhesive composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive composition for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.

First claim

The invention claimed is:

1. An adhesive composition for a semiconductor comprising:
a thermoplastic resin having a glass transition temperature of −10° C. to 20° C.;
a curing agent containing a phenol resin having a softening point of greater than 100° C. and not more than 160° C.;
a solid epoxy resin;
and a liquid epoxy resin,
wherein a weight ratio of total contents of the solid epoxy resin and the liquid epoxy resin to the thermoplastic resin is 1.6 to 2.6,
a weight ratio of the phenol resin to the total weight of the thermoplastic resin, the phenol resin, and the liquid epoxy resin is 0.333 to 0.600,
the weight ratio of the liquid epoxy resin to the phenol resin is 0.5 to 1.5.

2. The adhesive composition according to claim 1 , wherein the weight ratio of total contents of the solid epoxy resin and the liquid epoxy resin to the thermoplastic resin is 1.7 to 2.5.

3. The adhesive composition according to claim 1 , wherein the liquid epoxy resin has a viscosity of 500 mPa·s to 20,000 mPa·s at 25° C.

4. The adhesive composition according to claim 1 , wherein the liquid epoxy resin has an epoxy equivalent weight of 100 to 1,000.

5. The adhesive composition according to claim 1 , wherein the phenol resin has a hydroxyl equivalent weight of 100 g/eq to 178 g/eq.

6. The adhesive composition according to claim 1 , wherein the thermoplastic resin includes one or more polymer resins selected from the group consisting of polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinylchloride, phenoxy, reactive butadiene acrylonitrile copolymer rubber, and (meth)acrylate-based resin.

7. The adhesive composition according to claim 6 , wherein the (meth)acrylate-based resin is a (meth)acrylate-based resin comprising (meth)acrylate-based repeat units including an epoxy-based functional group, and having a glass transition temperature of −10° C. to 20° C.

8. The adhesive composition according to claim 7 , wherein the (meth)acrylate-based resin comprises 0.1 wt % to 10 wt % of (meth)acrylate-based repeat units including an epoxy-based functional group.

9. The adhesive composition according to claim 1 , further comprising an ion scavenger including a metal oxide including one or more metals selected from the group consisting of zirconium, antimony, bismuth, magnesium, and aluminum; porous silicate; porous alumino silicate; or zeolite.

10. An adhesive film for a semiconductor comprising the adhesive composition for a semiconductor of claim 1 , wherein a modulus generated at 5% to 10% elongation at room temperature is 75 MPa to 300 MPa.

11. The adhesive film according to claim 10 , wherein the adhesive film has a thickness of 1 μm to 300 μm.

12. A dicing die bonding film comprising a base film; a tacky layer formed on the base film; and an adhesive layer comprising the adhesive composition for a semiconductor of claim 1 , formed on the tacky layer.

13. The dicing die bonding film according to claim 12 , wherein the base film has a thickness of 10 μm to 200 μm, the tacky layer has a thickness of 1 μm to 600 μm, and the adhesive film has a thickness of 1 μm to 300 μm.

Assignees

• Lg Chemical Ltd

Inventors

• Kim Hee Jung
• Kim Se Ra
• Kim Jung Hak
• Nam Seung Hee
• Jo Jung Ho
• Lee Kwang Joo
• Kim Young Kook

Classifications

• H10P72/7404

  the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer · CPC title

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10P72/7442

  Separation by peeling · CPC title

• H10P72/7438

  with parts of the auxiliary support remaining in the finished device · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title