Abrasive, abrasive set, and method for polishing substrate

Patent metadata

Field	Value
Publication number	US-10759968-B2
Application number	US-201816018279-A
Country	US
Kind code	B2
Filing date	Jun 26, 2018
Priority date	Dec 26, 2013
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

A polishing agent comprises: a fluid medium; an abrasive grain containing a hydroxide of a tetravalent metal element; a first additive; a second additive; and a third additive, wherein: the first additive is at least one selected from the group consisting of a compound having a polyoxyalkylene chain and a vinyl alcohol polymer; the second additive is a cationic polymer; and the third additive is an amino group-containing sulfonic acid compound.

First claim

The invention claimed is:

1. A polishing agent comprising:
a fluid medium;
abrasive grains containing a hydroxide of a tetravalent metal element;
a first additive;
a second additive; and
a third additive,
wherein:
the first additive is at least one selected from the group consisting of a compound having a polyoxyalkylene chain and a vinyl alcohol polymer;
the second additive is a cationic polymer; and
the third additive is an amino group-containing sulfonic acid compound.

2. The polishing agent according to claim 1 , wherein the second additive is at least one selected from the group consisting of an allylamine polymer, a diallylamine polymer, a vinylamine polymer and an ethyleneimine polymer.

3. The polishing agent according to claim 1 , wherein the third additive is at least one selected from the group consisting of sulfamic acid, an aliphatic aminosulfonic acid, an aromatic aminosulfonic acid and their salts.

4. The polishing agent according to claim 1 , wherein a content of the third additive is 0.0005 mass % or more and 0.2 mass % or less based on a total mass of the polishing agent.

5. The polishing agent according to claim 1 , wherein the hydroxide of a tetravalent metal element contains an anion, excluding a hydroxide ion, bonded to the tetravalent metal element.

6. A polishing agent set comprising constituent components of the polishing agent according to claim 1 stored as separate liquids containing a first liquid and a second liquid, wherein the first liquid contains the abrasive grains, and the second liquid contains at least one selected from the group consisting of the first additive, the second additive and the third additive.

7. A method for polishing a base, comprising a step of polishing a surface to be polished of a base using the polishing agent according to claim 1 .

8. A method for polishing a base, comprising a step of polishing a surface to be polished of a base using a polishing agent obtained by mixing at least the first liquid and the second liquid of the polishing agent set according to claim 6 .

9. A method for polishing a base having an insulating material and a stopper material,
the method comprising a step of selectively polishing the insulating material with respect to the stopper material using the polishing agent according to claim 1 .

10. A method for polishing a base having an insulating material and a stopper material,
the method comprising a step of selectively polishing the insulating material with respect to the stopper material using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 6 .

11. The method for polishing a base according to claim 9 , wherein the stopper material is polysilicon.

12. The method for polishing a base according to claim 10 , wherein the stopper material is polysilicon.

13. The method for polishing a base according to claim 7 , wherein the surface to be polished contains silicon oxide.

14. The method for polishing a base according to claim 8 , wherein the surface to be polished contains silicon oxide.

15. The method for polishing a base according to claim 9 , wherein the insulating material contains silicon oxide.

16. The method for polishing a base according to claim 10 , wherein the insulating material contains silicon oxide.

17. The polishing agent according to claim 2 , wherein the second additive comprises one or more structural units derived from at least one selected from the group consisting of acrylamide, dimethylacrylamide, diethylacrylamide, hydroxyethylacrylamide, acrylic acid, methyl acrylate, methacrylic acid, maleic acid, and sulfur dioxide.

Assignees

• Hitachi Chemical Co Ltd

Inventors

• Minami Hisataka
• Iwano Tomohiro
• Akutsu Toshiaki

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• C09K3/1409 Primary

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title