Silicon carbide/graphite composite and articles and assemblies comprising same
US-2018240878-A1 · Aug 23, 2018 · US
Manufacturing method of silicon carbide and silicon carbide manufactured using the same
US10759664B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10759664-B2 |
| Application number | US-201715855246-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2017 |
| Priority date | Dec 27, 2016 |
| Publication date | Sep 1, 2020 |
| Grant date | Sep 1, 2020 |
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Abstract
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A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.
First claim
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The invention claimed is: 1. A method of preparing silicon carbide, the method comprising: reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is used, wherein the reacting is represented by Reaction Scheme 1 or 2 or 3 below: 4Mg+SiO2+CO2(g)→4MgO+SiC, [Reaction Scheme 1] First stage: 4Mg+SiO2→Mg2Si+2MgO Second stage: Mg2Si+2MgO+CO2(g)→4MgO+SiC, [Reaction Scheme 2] Mg2Si+2MgO+CO2(g)→4MgO+SiC. [Reaction Scheme 3] 2. The method according to claim 1 , further comprising using a heat scavenger, wherein the heat scavenger comprises NaCl. 3. The method according to claim 1 , wherein the silicon-containing compound is amorphous silica (SiO 2 ). 4. The method according to claim 3 , wherein the amorphous silica is chaff-derived silica. 5. The method according to claim 1 , wherein the reacting is performed at a temperature of 1,400° C. to 1,700° C. 6. The method according to claim 1 , wherein silicon carbide prepared using the method has a yield of 90% or more. 7. The method according to claim 1 , further comprising post-treating silicon carbide prepared using the method.
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Classifications
Magnesium silicates · CPC title
by oxidation of metallic magnesium · CPC title
Magnesia · CPC title
Alpha, beta or gamma radiation related properties · CPC title
Surface area · CPC title
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- What does patent US10759664B2 cover?
- A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.
- Who is the assignee on this patent?
- Korea Inst Energy Res
- What technology area does this patent fall under?
- Primary CPC classification C01B32/97. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Sep 01 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).