Hermetic vertical shear weld wafer bonding

Patent metadata

Field	Value
Publication number	US-10759658-B2
Application number	US-201816215628-A
Country	US
Kind code	B2
Filing date	Dec 10, 2018
Priority date	Dec 10, 2018
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

In described examples, a first metal layer is arranged along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is arranged adjacent to the first metal layer, where the second metal layer includes a cantilever. The cantilever is arranged to deform in response to forces applied from a contacting structure of the second substrate during bonding of the first substrate to the second substrate. The deformed cantilevered is arranged to impede contaminants against contacting an element within the cavity.

First claim

What is claimed is:

1. Apparatus, comprising:
a first substrate that delimits a first surface of a cavity;
a second substrate that delimits a second surface of the cavity;
a first metal layer arranged along a periphery of the cavity, the first metal layer including a first horizontal surface formed adjacent to the first substrate, and the first metal layer including an exposed vertical edge;
a second metal layer arranged adjacent to a second horizontal surface of the first metal layer, the second metal layer including a cantilevered portion that extends beyond the exposed vertical edge, such that a void is between the cantilevered portion and the first substrate; and
a fulcrum formed by the second horizontal surface of the first metal layer and the exposed vertical edge of the first metal layer;
in which the cantilevered portion of the second metal layer is arranged to deform around the fulcrum and into the void in response to bonding forces applied during bonding of the first substrate to the second substrate.

2. The apparatus of claim 1 , wherein the second metal layer is arranged to impede a contaminant against migrating across the first metal layer and entering the cavity after bonding to the second substrate.

3. The apparatus of claim 1 , wherein the second metal layer includes a metal more ductile that the first metal layer.

4. The apparatus of claim 1 , wherein the second metal layer includes gold, and the first metal layer includes nickel.

5. The apparatus of claim 1 , wherein the second substrate includes a metal contacting structure configured to contact the cantilevered portion of the second metal layer.

6. The apparatus of claim 5 , wherein the cantilevered portion of the second metal layer forms a shear weld with the metal contacting structure in response to the bonding forces applied during bonding of the first substrate to the second substrate.

7. The apparatus of claim 1 , wherein the exposed vertical edge is a first exposed vertical edge, the cantilevered portion is a first cantilevered portion, the void is a first void, the fulcrum is a first fulcrum, and the apparatus includes:
a third metal layer including a third horizontal surface formed adjacent to the second substrate, the third metal layer including a second exposed vertical edge;
a fourth metal layer arranged adjacent to a fourth horizontal surface of the third metal layer, the fourth metal layer including a second cantilevered portion that extends beyond the second exposed vertical edge, such that a second void is between the second cantilevered portion and the second substrate;
a second fulcrum formed by the fourth horizontal surface of the third metal layer and the second exposed vertical edge; in which the second cantilevered portion of the fourth metal layer is arranged to deform around the second fulcrum and into the second void in response to bonding forces applied during bonding of the first substrate to the second substrate.

8. The apparatus of claim 7 , wherein a shear weld is formed between the first cantilevered portion and the second cantilevered portion.

9. The apparatus of claim 8 , wherein the first metal layer includes a third exposed vertical edge, the second metal layer includes a third cantilevered portion that extends beyond the third exposed vertical edge, such that a third void is between the third cantilevered portion and the first substrate, a third fulcrum is formed by the second horizontal surface of the first metal layer and the third exposed vertical edge, and the third cantilevered portion is arranged to deform around the third fulcrum and into the third void in response to bonding forces applied during bonding of the first substrate to the second substrate.

10. The apparatus of claim 1 , wherein the first substrate includes silicon, and the second substrate includes glass.

11. The apparatus of claim 1 , wherein the exposed vertical edge is a first exposed vertical edge, the cantilevered portion is a first cantilevered portion, the void is a first void, the fulcrum is a first fulcrum, the first metal layer includes a second exposed vertical edge, the second metal layer includes a second cantilevered portion that extends beyond the second exposed vertical edge, such that a second void is between the second cantilevered portion and the first substrate, a second fulcrum is formed by the second horizontal surface of the first metal layer and the second exposed vertical edge, and the second cantilevered portion is arranged to deform around the second fulcrum and into the second void in response to bonding forces applied during bonding of the first substrate to the second substrate.

12. The apparatus of claim 1 , further comprising circuitry extending between the first substrate and the first metal layer.

13. Apparatus, comprising:
a first substrate that delimits a first surface of a cavity;
a second substrate that delimits a second surface of the cavity;
a first metal layer arranged along a periphery of the cavity, the first metal layer including a first horizontal surface formed adjacent to the first substrate, and the first metal layer including an exposed vertical edge; and
a second metal layer arranged adjacent to a second horizontal surface of the first metal layer, the second metal layer including a cantilevered portion that extends beyond the exposed vertical edge, such that a void is between the cantilevered portion and the first substrate;
in which the cantilevered portion of the second metal layer is arranged to weld to a contacting structure of the second substrate during bonding of the first substrate to the second substrate, and the welded cantilevered portion of the second metal layer is arranged to impede contaminants against contacting an element within the cavity.

14. The apparatus of claim 13 , wherein the element is a microelectromechanical system (MEMS) element.

15. The apparatus of claim 13 , wherein the weld extends peripherally around the cavity.

16. The apparatus of claim 13 , wherein the weld is configured to exert tensile forces for bonding the first substrate to the second substrate.

17. A method, comprising:
depositing a resist on a first substrate peripherally around a cavity, in which a first surface of the cavity is delimited by the first substrate;
depositing a first metal layer over the first substrate, in which the first metal layer is deposited against a first vertical edge of the resist;
depositing a second metal layer over the first metal layer and the resist;
removing the resist to form a second metal layer cantilever and a void that extends between the second metal layer cantilever and the first substrate; and
bonding a second substrate to the first substrate by compressing the first and second substrates together to force a contacting structure of the second substrate against the second metal layer cantilever to deform the second metal layer cantilever.

18. The method of claim 17 , wherein the second metal layer cantilever is formed with a chamfer configured to contact the contacting structure of the second substrate.

19. The method of claim 18 , wherein the contacting structure of the second substrate includes a second substrate metal cantilever configured to weld with the second metal layer cantilever.

Assignees

• Texas Instruments Inc

Inventors

• Ehmke John Charles
• Kmecko Ivan

Classifications

• B81C2203/0118

  Bonding a wafer on the substrate, i.e. where the cap consists of another wafer · CPC title

• B81C2203/038

  Bonding techniques not provided for in B81C2203/031 - B81C2203/037 · CPC title

• B81B7/0041 Primary

  maintaining a controlled atmosphere with techniques not provided for in B81B7/0038 · CPC title

• B81C2203/0109

  Bonding an individual cap on the substrate · CPC title

• B81C1/00269 Primary

  Bonding of solid lids or wafers to the substrate · CPC title