Gate drive circuit for semiconductor switching devices
US-2017207782-A1 · Jul 20, 2017 · US
US10756728B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10756728-B2 |
| Application number | US-201916699401-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 29, 2019 |
| Priority date | Dec 19, 2018 |
| Publication date | Aug 25, 2020 |
| Grant date | Aug 25, 2020 |
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An insulated gate device drive apparatus for driving an insulated gate device by using a charging current outputted from a totem-pole output circuit constituted by a high-side output transistor and a low-side output transistor. The insulated gate device drive apparatus includes a charging current correction circuit configured to perform correction to increase the charging current that is decreased by an increased voltage drop of high-side wiring resistance between a power supply and the high-side output transistor.
Opening claim text (preview).
What is claimed is: 1. An insulated gate device drive apparatus that drives an insulated gate device by using a charging current outputted from a totem-pole output circuit constituted by a high-side output transistor and a low-side output transistor, the insulated gate device drive apparatus comprising: a charging current correction circuit configured to perform correction to increase the charging current that is decreased by an increased voltage drop of high-side wiring resistance between a power supply and the high-side output transistor. 2. The insulated gate device drive apparatus according to claim 1 , wherein the charging current correction circuit includes: a differential amplifier circuit configured to amplify a potential difference between a first potential at a connection point of the high-side output transistor and the high-side wiring resistance and a second potential at a connection point of the high-side wiring resistance and the power supply, to thereby output a correction voltage; an adder circuit configured to add the correction voltage outputted by the differential amplifier circuit to a reference voltage externally applied for setting the charging current; and an inverting amplifier circuit configured to invert the polarity of an output voltage of the adder circuit and supply the output voltage to a circuit that generates the charging current. 3. An insulated gate device drive apparatus that drives an insulated gate device by causing a totem-pole output circuit constituted by a high-side output transistor and a low-side output transistor to sink a discharging current from the insulated gate device, the insulated gate device drive apparatus comprising: a discharging current correction circuit configured to perform correction to increase the discharging current that is decreased by an increased voltage drop of low-side wiring resistance between the low-side output transistor and a ground terminal. 4. The insulated gate device drive apparatus according to claim 3 , wherein the discharging current correction circuit includes a voltage drop detection circuit configured to detect a voltage drop that is caused when the discharging current flows through the low-side wiring resistance, and a bypass circuit connected in parallel with a series circuit of the low-side output transistor and the low-side wiring resistance, and wherein, when a value of the voltage drop detected by the voltage drop detection circuit exceeds a predetermined value, a part of the discharging current flows through the bypass circuit. 5. The insulated gate device drive apparatus according to claim 4 , wherein the bypass circuit is a switch element configured to be connected to both ends of the series circuit of the low-side output transistor and the low-side wiring resistance and to be set to on when the detected value of the voltage drop exceeds the predetermined value. 6. A drive apparatus for driving an insulated gate device, comprising: a totem-pole output circuit including a high-side output transistor and a low-side output transistor, the high-side output transistor being connected to a power supply via high-side wiring resistance, the totem-pole output circuit outputting a charging current to drive the insulated gate device; and a charging current correction circuit connected to the high-side wiring resistance, and being configured to perform correction to increase the charging current that is decreased by an increased voltage drop of the high-side wiring resistance. 7. A drive apparatus for driving an insulated gate device, comprising: a totem-pole output circuit including a high-side output transistor and a low-side output transistor, the low-side output transistor being connected, via low-side wiring resistance, to a ground terminal, the totem-pole output circuit being configured to sink a discharging current from the insulated gate device; and a discharging current correction circuit connected to the low-side wiring resistance, and being configured to perform correction to increase the discharging current that is decreased by an increased voltage drop of the low-side wiring resistance.
Special modifications or use of the back gate voltage of a FET · CPC title
in field-effect transistor switches · CPC title
Measuring means of, e.g. currents through or voltages across the switch · CPC title
Power supply means, e.g. to the switch driver · CPC title
in integrated circuits · CPC title
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