Hybrid switch control

Patent metadata

Field	Value
Publication number	US-10756722-B2
Application number	US-201816490697-A
Country	US
Kind code	B2
Filing date	Mar 1, 2018
Priority date	Mar 2, 2017
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

A hybrid switch apparatus includes a standard semiconductor switch and a fast semiconductor switch electrically arranged in parallel to form a joint output current path for carrying a load current. The standard switch may be a silicon (Si) MOSFET while the fast switch may be a GaN high electron mobility transistor (HEMT). A means for producing first and second gate drive signals includes a pulse former. The first gate drive signal is applied the standard switch for selectively turning the standard switch on and off. The pulse former outputs the second gate drive signal for driving the fast switch, where the pulse former generates the second gate drive signal as a switch-on pulse starting synchronously with each transition of the first gate drive signal and which generates the second gate drive signal in an OFF state in between pulses to avoid incurring a conduction loss in the fast switch.

First claim

What is claimed is:

1. An apparatus comprising:
a gate drive circuit for producing a first gate drive signal on a first gate drive output wherein said first gate drive signal comprises an ON state and an OFF state;
a first semiconductor switching device having a first gate, a first drain, and a first source;
a second semiconductor switching device having a second gate, a second drain, and a second source, said second semiconductor switching device having a first turn-on time that is less than a second turn-on time associated with said first semiconductor switching device;
said first and second semiconductor switching devices being connected in a parallel arrangement wherein (i) said first drain and said second drain are electrically connected and (ii) said first source and said second source are electrically connected, wherein said first gate of said first semiconductor switching device is connected to said first gate drive output of said gate drive circuit to receive said first gate drive signal; and
a pulse former external to said gate drive circuit and coupled between said gate drive output and said second gate of said second semiconductor switching device for receiving said first gate drive signal and producing a second gate drive signal comprising a first pulse and a second pulse, said pulse former being configured to generate:
(i) said first pulse in response to said first gate drive signal transitioning from said OFF state to said ON state, wherein a rising edge of said first pulse is synchronous with, and not prior to, said first gate drive signal transitioning to said ON state, and
(ii) said second pulse in response to said first gate drive signal transitioning from said ON state to said OFF state, wherein a rising edge of said second pulse is synchronous with, and not prior to, said first gate drive signal transitioning to said OFF state, and
wherein said second gate drive signal is in an OFF state between said first and second pulses.

2. The apparatus of claim 1 wherein said second switching device comprises a wide-bandgap (WBG) device including a GaN high electron mobility transistor (HEMT) device, a GaN cascode device, a SiC device, or a GaN based switching device.

3. The apparatus of claim 1 wherein said first semiconductor switching device comprises a silicon (Si) MOSFET device.

4. The apparatus of claim 3 wherein said Si MOSFET device comprises a body diode between said first source and said first drain.

5. The apparatus of claim 1 wherein said first pulse has a first duration and said second pulse has a second duration.

6. The apparatus of claim 5 wherein said first and second durations are equal.

7. The apparatus of claim 5 wherein said first and second durations are unequal.

8. The apparatus of claim 1 wherein a first power handling capability of said first semiconductor switch is greater than a second power handling capability of said second semiconductor switch.

9. The apparatus of claim 1 wherein said OFF state of said second gate drive signal in between said first and second pulses reduces a conduction power loss of said second semiconductor switching device.

10. The apparatus of claim 1 further comprising respective resistors coupled to said first and second control inputs and through which said first and second gate drive signals pass.

Assignees

• Hella Gmbh & Co Kgaa

Inventors

• Korner Andre

Classifications

• H03K2217/0036

  Means reducing energy consumption · CPC title

• H03K17/122 Primary

  in field-effect transistor switches · CPC title

• H03K17/127 Primary

  in composite switches · CPC title