Textured optoelectronic devices and associated methods of manufacture

Patent metadata

Field	Value
Publication number	US-10756236-B2
Application number	US-201816104857-A
Country	US
Kind code	B2
Filing date	Aug 17, 2018
Priority date	Jul 26, 2011
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

First claim

We claim:

1. An optoelectronic device, comprising:
an optoelectronic layer;
a texturing material; and
a top layer, wherein the texturing material is positioned between the optoelectronic layer and the top layer, wherein:
the top layer includes a surface having a plurality of protuberances,
the plurality of protuberances extend outwardly in a direction away from the optoelectronic layer to increase light extraction efficiency of the optoelectronic device,
the plurality of protuberances has a pattern representative of irregular pillars, and
the top layer directly contacts the texturing material and includes one or more materials that react with the texturing material under heat to grow the irregular pillars.

2. The optoelectronic device of claim 1 wherein the pattern is a random pattern.

3. The optoelectronic device of claim 2 wherein the random pattern is dry-etched into the top layer.

4. The optoelectronic device of claim 1 wherein the plurality of protuberances form a pattern, wherein the pattern includes a first portion of the surface and a second portion of the surface, wherein the first portion of the surface includes at least a portion of the plurality of protuberances, and wherein the second portion of the surface is devoid of the plurality of protuberances.

5. The optoelectronic device of claim 1 wherein the plurality of protuberances form a pattern, wherein the pattern includes a first portion of the surface having a first portion of the plurality of protuberances and a second portion of the surface having a second portion of the plurality of protuberances, wherein the first portion of the plurality of protuberances, on average, extend outwardly further than the second portion of the plurality of protuberances.

6. The optoelectronic device of claim 1 wherein the plurality of protuberances are located according to a random pattern laterally across the top layer.

7. The optoelectronic device of claim 1 wherein the pattern of the plurality of protuberances include pillars having irregular sizes and/or shapes.

8. The optoelectronic device of claim 1 wherein the pattern of the plurality of protuberances corresponds to a number, a shape, an arrangement and/or a size associated with growing pillars using the one or more types of materials.

9. The optoelectronic device of claim 1 wherein the pattern of the plurality of proturberances includes characteristic of etching away the irregular pillars.

10. The optoelectronic device of claim 9 wherein the etching characteristics of the pattern of the plurality of proturberances does not correspond to photolithography or wet etching.

11. The optoelectronic device of claim 1 wherein the optoelectronic layer includes an optoelectronic transducer.

12. The optoelectronic device of claim 1 wherein the optoelectronic layer includes an emitter.

13. The optoelectronic device of claim 12 wherein the emitter is a solid state emitter.

14. The optoelectronic device of claim 12 wherein the emitter includes:
a first semiconductor material;
an active region; and
a second semiconductor material, wherein—
the active region is positioned between the first semiconductor material and the second semiconductor material, and
the second semiconductor material contacts the texturing material.

15. The optoelectronic device of claim 1 wherein the texturing material includes Titanium.

16. The optoelectronic device of claim 1 wherein the top layer includes one or more metallic material and an oxide.

17. The optoelectronic device of claim 16 wherein the top layer includes Indium Tin Oxide (ITO).

Assignees

• Micron Technology Inc

Inventors

• Xu Lifang
• Schellhammer Scott D
• Mou Shan Ming
• Bernhardt Michael J

Classifications

• H10H20/882

  Scattering means (H10H20/82 takes precedence) · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10F77/315 Primary

  the coatings being antireflective or having enhancing optical properties · CPC title