Display device and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-10754146-B2
Application number	US-201515509525-A
Country	US
Kind code	B2
Filing date	Aug 31, 2015
Priority date	Sep 11, 2014
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

A display device includes: a translucent substrate; a light-shielding film provided on the translucent substrate; first transparent insulating films that are provided on the translucent substrate so as to cover the covering the light-blocking film; and a plurality of thin film transistors (TFTs) that are provided on the first transparent insulation films and include a portion of lines made of conductive films. The light-shielding film is arranged so as to overlap at least the TFTs, when viewed in a direction vertical to the translucent substrate.

First claim

The invention claimed is:

1. A display device including a plurality of pixels, the display device comprising:
a translucent substrate;
a light-shielding film provided on the translucent substrate and including an opening in a light transmitting region;
a first transparent insulating film that is provided on the translucent substrate to cover the light-shielding film;
a second transparent insulating film that is provided to cover the first transparent insulating film and the translucent substrate;
a light transmission film provided on the second transparent insulating film;
a plurality of thin film transistors that are provided on the light transmission film and include a portion of a line made of a conductive film; and
a third transparent insulating film provided on the light transmission film and below a gate electrode of each of the plurality of thin film transistors, wherein
the light-shielding film is arranged to overlap at least the thin film transistors, when viewed in a direction vertical to the translucent substrate,
the first transparent insulating film covers an entire surface of the light-shielding film,
a thickness of the light-shielding film is larger than a thickness of the first transparent insulating film,
a thickness of the light transmission film is larger than a thickness of the light-shielding film,
the light transmission film fills the opening of the light-shielding film,
the light transmission film includes, in an outer peripheral portion of a display region, an edge surface inclined with respect to the translucent substrate,
the line extends from the display region to an outside of the display region and intersects with the edge surface of the light transmission film,
the second transparent insulating film includes an edge aligned with a lower edge of the edge surface of the light transmission film,
the third transparent insulating film includes an edge aligned with an upper edge of the edge surface of the light transmission film, and
the line intersects with the edge of the second transparent insulating film and the edge of the third transparent insulating film.

2. The display device according to claim 1 , wherein the light-shielding film is arranged in entire areas of the plurality of pixels except for the light transmitting regions, when viewed in a direction vertical to the translucent substrate.

3. The display device according to claim 1 , wherein the first transparent insulating film is a silicon-based inorganic film containing oxygen or nitrogen.

4. The display device according to claim 1 , wherein the first transparent insulating film includes two or more layers of transparent insulating films that are laminated.

5. The display device according to claim 1 , wherein the light transmission film is made of a coating-type material.

6. The display device according to claim 1 , wherein, in a peripheral portion of the translucent substrate, an angle defined between a surface of the translucent substrate and a surface of the light transmission film is smaller than 20°.

7. The display device according to claim 6 , further comprising:
a counter substrate that is arranged to be opposed to the translucent substrate; and
a ring-shaped sealing material that bonds the peripheral portion of the translucent substrate and the counter substrate,
wherein, in the peripheral portion of the translucent substrate, the sealing material is arranged to not overlap the edge surface of the light transmission film.

8. The display device according to claim 1 , wherein the thin film transistor includes an oxide semiconductor film.

9. The display device according to claim 1 , wherein
the first transparent insulating film includes an opening,
an edge of the first transparent insulating film in the opening of the first transparent insulating film and an edge of the light-shielding film in the opening of the light-shielding film are aligned and covered with the second transparent insulating film, and
a thickness of the light-shielding film is larger than a thickness of the first transparent insulating film.

10. The display device according to claim 1 , wherein a portion of the light transmission film in an outer peripheral portion is exposed by the third transparent insulating film.

11. The display device according to claim 1 , wherein the portion of the light transmission film in an outer peripheral portion does not overlap with the light-shielding film or the third transparent insulating film.

12. The display device according to claim 1 , wherein each of the plurality of thin film transistors further includes a gate insulating film, and a semiconductor film opposing the gate electrode via the gate insulating film.

13. A method for producing the display device according to claim 1 , the method comprising:
a first annealing step of baking the first transparent insulating film; and
a second annealing step of baking the thin film transistor,
wherein a treatment temperature in the first annealing step is at or above the treatment temperature in the second annealing step.

Assignees

• Sharp Kk

Inventors

• Nishiki Hirohiko
• Okabe Tohru

Classifications

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6723

  having light shields · CPC title

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title