Wafer arrangement

Patent metadata

Field	Value
Publication number	US-10753858-B2
Application number	US-201916456361-A
Country	US
Kind code	B2
Filing date	Jun 28, 2019
Priority date	Mar 27, 2015
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

Shown is a wafer arrangement for a gas sensor including a first substrate and a sescond substrate. The first substrate includes a MEMS membrane associated with a sensor element and an emitter element configured to emit electromagnetic radiation. The second substrate is arranged on top of the first substrate and defines at least a portion of a chamber disposed adjacent to the MEMS membrane.

First claim

The invention claimed is:

1. A photoacoustic sensor device comprising:
a wafer arrangement, comprising:
a first substrate, comprising:
a first portion that includes a MEMS membrane associated with a sensor element; and
a second portion that includes an emitter element configured to emit electromagnetic radiation toward the MEMS membrane on a radiation path; and

a second substrate, comprising:
a first portion arranged adjacent to the first portion of the first substrate, wherein the first portion of the second substrate defines at least a portion of a reference chamber configured to contain a reference gas and disposed adjacent to the MEMS membrane; and

a measurement chamber configured to contain a measurement gas, wherein the measurement chamber is on the radiation path between the emitter element and the MEMS membrane.

2. The photoacoustic sensor device as claimed in claim 1 , wherein the MEMS membrane is configured to convert energy of the electromagnetic radiation into an output signal.

3. The photoacoustic sensor device as claimed in claim 1 , wherein the MEMS membrane is configured to have a deflection which is dependent on an energy of the electromagnetic radiation.

4. The photoacoustic sensor device as claimed in claim 1 , wherein the emitter element is embodied to emit the electromagnetic radiation in a pulsating manner with a frequency that is greater than 0.1 Hz or greater than 0.5 Hz or greater than 1 Hz.

5. The photoacoustic sensor device as claimed in claim 1 , further comprising a third substrate including a first portion arranged adjacent the first portion of the first substrate, wherein the third substrate defines at least a portion of a pressure equalization chamber disposed adjacent to the MEMS membrane.

6. The photoacoustic sensor device as claimed in claim 1 , wherein the first portion of the second substrate further comprises a shadow mask arranged above the MEMS membrane.

7. The photoacoustic sensor device as claimed in claim 1 , wherein the first portion of the first substrate further comprises a counter electrode arranged below the MEMS membrane.

8. The photoacoustic sensor device as claimed in claim 1 , wherein the second substrate further comprises at least one spacer protruding from a periphery of a surface of the second substrate opposite the first substrate.

9. The photoacoustic sensor device as claimed in claim 1 , wherein the emitter element and the sensor element are arranged in a projection plane extending in a thickness direction with respect to the emitter element and the sensor element.

10. A method, comprising:
providing a wafer arrangement including a second substrate disposed adjacent to a first substrate, wherein:
a first portion of the first substrate is adjacent to a first portion of the second substrate and comprises a MEMS membrane associated with a sensor element; and
a second portion of the first substrate is adjacent to a second portion of the second substrate and comprises an emitter element configured to emit electromagnetic radiation toward the MEMS membrane on a radiation path, and
the first portion of the second substrate defines at least a portion of a reference chamber configured to contain a reference gas;

separating the first portion of the first substrate and the first portion of the second substrate from the second portion of the first substrate and the second portion of the second substrate, wherein the first portion of the first substrate and the first portion of the second substrate form a first gas sensor layer and the second portion of the first substrate and the second portion of the second substrate form a second gas sensor layer; and
stacking the first gas sensor layer on the second gas sensor layer to form a gas sensor that includes a measurement chamber in the radiation path between the emitter element and the MEMS membrane.

11. The method of claim 10 , wherein the separating comprises breaking the wafer arrangement along sawmarks in the wafer arrangement.

12. The method of claim 10 , further comprising stacking the the first gas sensor layer on the second gas sensor layer such that a top surface of the first portion of the second substrate faces a top surface of the second portion of the second substrate.

13. The method of claim 12 , wherein the second substrate includes at least one spacer disposed at a periphery of the first portion of the second substrate or the second portion of the second substrate and wherein the method comprises stacking the first gas sensor layer on the second gas sensor layer such that the at least one spacer forms a wall of a measurement chamber.

14. The method of claim 10 , further comprising stacking the first gas sensor layer on the second gas sensor layer such that a bottom surface of the first portion of the second substrate faces a bottom surface of the second portion of the first substrate.

15. A gas sensor, comprising a multi-wafer stack of differing layers, wherein the differing layers comprise:
a first layer comprising a sensor element, which has a MEMS membrane;
a second layer comprising a reference chamber configured to contain a reference gas and disposed adjacent to the MEMS membrane; and
a third layer comprising an emitter element configured to emit electromagnetic radiation;
a measurement chamber configured to receive a measurement gas, the measurement chamber defined between the first layer and the second layer; and
wherein the electromagnetic radiation from the emitter passes over a radiation path that includes the measurement chamber proceeding from the emitter element.

16. The gas sensor as claimed in claim 15 , wherein the gas sensor is configured to convert energy of the electromagnetic radiation into an output signal of the MEMS membrane based on a photoacoustic effect.

17. The gas sensor as claimed in claim 15 , wherein the MEMS membrane is configured to have a deflection which is dependent on an energy of the electromagnetic radiation.

18. The gas sensor as claimed in claim 15 , wherein the emitter element is embodied to emit the electromagnetic radiation in a pulsating manner with a frequency that is greater than 0.1 Hz or greater than 0.5 Hz or greater than 1 Hz.

19. The gas sensor as claimed in claim 15 , further comprising a shadow mask arranged above the MEMS membrane.

20. The gas sensor as claimed in claim 15 , further comprising a counter electrode arranged above the MEMS membrane.

Assignees

• Infineon Technologies Ag
• Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev

Inventors

• Kolb Stefan
• Dehe Alfons
• Huber Jochen
• Jost Franz
• Theuss Horst
• Wiedmeier Wilhelm
• Woellenstein Juergen

Classifications

• G01N29/30

  Arrangements for calibrating or comparing, e.g. with standard objects · CPC title

• G01N2291/0256

  Adsorption, desorption, surface mass change, e.g. on biosensors · CPC title

• G01N21/1702 Primary

  with opto-acoustic detection, e.g. for gases or analysing solids · CPC title

• G01N29/022

  Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices (microdevices per se B81B) · CPC title

• G01N2021/1704

  in gases · CPC title