Nanowire-based transparent conductors and applications thereof

Patent metadata

Field	Value
Publication number	US-10749048-B2
Application number	US-201414281685-A
Country	US
Kind code	B2
Filing date	May 19, 2014
Priority date	Oct 12, 2006
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, patternable and is suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like.

First claim

The invention claimed is:

1. A single junction solar cell structure, comprising:
a bottom contact;
a semiconductor diode on the bottom contact; and
a top contact on the semiconductor diode, wherein:
at least one of the bottom contact or the top contact comprises a plurality of electrically conductive nanowires disposed in a matrix material,
the matrix material comprises a corrosion inhibitor having a composition different than a composition of the matrix material,
the corrosion inhibitor comprises at least one of benzotriazole, imidazole, thiazole, dithiothiadiazole, alkyl dithiothiadiazole, acrolein, glyoxal, triazine or n-chlorosuccinimide,
the matrix material surrounds a circumference of a first portion of a first electrically conductive nanowire of the plurality of electrically conductive nanowires, and
a second portion of the first electrically conductive nanowire protrudes from an external surface of the matrix material.

2. The single junction solar cell structure of claim 1 , wherein the semiconductor diode comprises an N-doped silicon layer and a P-doped silicon layer.

3. The single junction solar cell structure of claim 2 , further comprising an undoped silicon layer positioned between the N-doped silicon layer and the P-doped silicon layer.

4. The single junction solar cell structure of claim 1 , wherein:
the semiconductor diode comprises an N-doped semiconductor layer and a P-doped semiconductor layer, and
the N-doped semiconductor layer has a higher bandgap than the P-doped semiconductor layer.

5. The single junction solar cell structure of claim 4 , further comprising an undoped semiconductor layer.

6. A multi-junction solar cell, comprising:
a bottom contact;
a first cell on the bottom contact, wherein:
the first cell comprises a first semiconductor diode, and
the first semiconductor diode comprises a first N-doped layer and a first P-doped layer;

a tunnel diode on the first cell, wherein:
the tunnel diode comprises a second N-doped layer and a second P-doped layer,
the second N-doped layer is distinct from the first N-doped layer, and
the second P-doped layer is distinct from the first P-doped layer;

a second cell on the tunnel diode, wherein:
the second cell comprises a second semiconductor diode,
the second semiconductor diode comprises a third N-doped layer and a third P-doped layer,
the third N-doped layer is distinct from the second N-doped layer, and
the third P-doped layer is distinct from the second P-doped layer; and

a top contact, wherein:
at least one of the bottom contact or the top contact comprises a plurality of electrically conductive nanowires,
the plurality of electrically conductive nanowires are disposed in a matrix material,
the matrix material comprises a corrosion inhibitor having a composition different than a composition of the matrix material,
the corrosion inhibitor comprises at least one of benzotriazole, imidazole, thiazole, dithiothiadiazole, alkyl dithiothiadiazole, acrolein, glyoxal, triazine or n-chlorosuccinimide,
at least some of the plurality of electrically conductive nanowires protrude from an external surface of the matrix material, and
the first semiconductor diode has a lower bandgap than that of the second semiconductor diode.

7. The multi-junction solar cell of claim 6 , further comprising:
one or more additional cells stacked sequentially on the second cell and below the top contact; and
one or more tunnel diodes formed between adjacent cells of the one or more additional cells, wherein each cell of the one or more additional cells comprises a semiconductor diode.

8. An electroluminescent device, comprising:
a bottom electrode;
an electroluminescent material layer comprising a semiconductor with two doped regions having different doping types, overlying the bottom electrode; and
a top electrode overlying the electroluminescent material layer, wherein:
the top electrode is optically clear,
the top electrode comprises a plurality of electrically conductive nanowires disposed in a matrix material and a plurality of conductive particles disposed in an overcoat layer,
the matrix material comprises a corrosion inhibitor having a composition different than a composition of the matrix material,
the corrosion inhibitor comprises at least one of benzotriazole, imidazole, thiazole, dithiothiadiazole, alkyl dithiothiadiazole, acrolein, glyoxal, triazine or n-chlorosuccinimide,
a concentration of the plurality of electrically conductive nanowires is such that an electrical percolation level is reached, and
a concentration of the plurality of conductive particles is such that the electrical percolation level is not reached.

9. The electroluminescent device of claim 8 , wherein the top electrode is patterned.

10. The electroluminescent device of claim 8 , wherein the matrix material and the overcoat layer are in direct, physical contact.

11. The electroluminescent device of claim 8 , wherein the overcoat layer is surface conductive.

12. The electroluminescent device of claim 8 , wherein the overcoat layer is surface conductive but not conductive through a thickness of the overcoat layer.

13. The multi-junction solar cell of claim 6 , wherein:
the at least one of the bottom contact or the top contact further comprises a plurality of conductive particles disposed in an overcoat layer.

14. The multi-junction solar cell of claim 13 , wherein the matrix material and the overcoat layer are in direct, physical contact.

15. The electroluminescent device of claim 10 , wherein an interface is present when the overcoat layer contacts the matrix material.

16. The multi-junction solar cell of claim 13 , wherein:
the overcoat layer directly contacts the matrix material, and
an interface is present where the overcoat layer contacts the matrix material.

17. The single junction solar cell structure of claim 1 , wherein the corrosion inhibitor comprises at least one of the benzotriazole, the thiazole, the dithiothiadiazole, the alkyl dithiothiadiazole, the acrolein, the glyoxal, the triazine or the n-chlorosuccinimide.

18. The multi-junction solar cell of claim 6 , wherein the corrosion inhibitor comprises at least one of the benzotriazole, the thiazole, the dithiothiadiazole, the alkyl dithiothiadiazole, the acrolein, the glyoxal, the triazine or the n-chlorosuccinimide.

19. The electroluminescent device of claim 8 , wherein the corrosion inhibitor comprises at least one of the benzotriazole, the thiazole, the dithiothiadiazole, the alkyl dithiothiadiazole, the acrolein, the glyoxal, the triazine or the n-chlorosuccinimide.

20. The single junction solar cell structure of claim 1 , wherein the corrosion inhibitor comprises the benzotriazole.

21. The single junction solar cell structure of claim 1 , wherein the corrosion inhibitor comprises the thiazole.

22. The single junction solar cell structure of claim 1 , wherein the corrosion inhibitor comprises the dithiothiadiazole.

23. The single junction solar cell structure of claim 1 , wherein the corrosion inhibitor comprises the alkyl dithiothiadiazole.

24. The single junction solar cell structure of claim 1 , wherein the corrosion inhibitor comprises the acrolein.

25. The single junction solar cell structure of claim 1 , wherein the corrosion inhibitor comprises the glyoxal.

26. The single junction solar cell structure of claim 1 , wherein the corro

Assignees

• Cambrios Film Solutions Corp

Inventors

• Allemand Pierre-Marc
• Dai Haixia
• Na Shuo
• Pakbaz Hash
• Pschenitzka Florian
• Quan Xina
• Sepa Jelena
• Spaid Michael A

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10D62/119

  Nanowire, nanosheet or nanotube semiconductor bodies · CPC title