Buffer layers for photovoltaic devices with group V doping
US-12119416-B2 · Oct 15, 2024 · US
US10749047B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10749047-B2 |
| Application number | US-201916365527-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2019 |
| Priority date | Sep 29, 2016 |
| Publication date | Aug 18, 2020 |
| Grant date | Aug 18, 2020 |
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The solar cell element includes a semiconductor substrate with first and second surfaces, a passivation layer located on the second surface, a protective layer located on the passivation layer, and a back-surface electrode located on the protective layer. The back-surface electrode is electrically connected to the semiconductor substrate via one or more hole portions penetrating the protective layer and the passivation layer. The protective layer includes a first region showing a tendency to increase in thickness as a distance from an inner edge portion of the hole portion and a second region surrounding the first region. A distance between a position of the first region farthest from the inner edge portion and the inner edge portion is larger than a thickness in the second region. The back-surface electrode shows a tendency to decrease in thickness on the first region as a distance from the inner edge portion.
Opening claim text (preview).
The invention claimed is: 1. A solar cell element comprising: a semiconductor substrate having a first surface and a second surface opposite the first surface; a passivation layer located on the second surface; a protective layer located on the passivation layer; and a back-surface electrode located on the protective layer, wherein the back-surface electrode is electrically connected to the semiconductor substrate via one or more hole portions penetrating the protective layer and the passivation layer, the protective layer includes a first region that increases in thickness as a distance from an inner edge portion of the hole portion increases toward a second region surrounding the first region, a distance between a position of the first region farthest from the inner edge portion and the inner edge portion is larger than a thickness in the second region, and the back-surface electrode decreases in thickness as a distance from the inner edge portion increases in a region of the back-surface electrode on the first region. 2. The solar cell element according to claim 1 , wherein the inner edge portion includes a concavo-convex portion in perspective plan view of the protective layer. 3. The solar cell element according to claim 1 , wherein the one or more hole portions include a first hole portion and a second hole portion adjacent to each other, and a distance between a position of the first region farthest from the inner edge portion and the inner edge portion located around the first hole portion is less than half of a distance between the first hole portion and the second hole portion. 4. The solar cell element according to claim 1 , wherein the passivation layer includes a first passivation layer present in a position in contact with the semiconductor substrate and a second passivation layer present in a position in contact with the protective layer, and the second passivation layer and the protective layer contain a same main component. 5. The solar cell element according to claim 1 , wherein the protective layer contains chlorine. 6. The solar cell element according to claim 5 , wherein a portion located on a back-surface electrode side of the protective layer is higher in chlorine concentration than a portion located on a passivation layer side of the protective layer. 7. The solar cell element according to claim 5 , wherein the passivation layer contains chlorine.
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