Package architecture utilizing wafer to wafer bonding
US-2024379487-A1 · Nov 14, 2024 · US
US10748835B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10748835-B2 |
| Application number | US-201916440004-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 13, 2019 |
| Priority date | Sep 3, 2015 |
| Publication date | Aug 18, 2020 |
| Grant date | Aug 18, 2020 |
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Official abstract text for this publication.
A cooling device includes an aluminum heat sink and at least one nickel sheet segment. The nickel sheet segment is connected to the aluminum heat sink by a solder layer. The cooling device includes a securing surface for securing and for heat absorption. The securing surface being formed by that side of the nickel sheet segment which faces away from aluminum heat sink. The aluminum heat sink is formed from a plurality of aluminum sheets which are stacked one above another and are connected to one another. At least one aluminum sheet includes cutouts which form a cooling channel covered by at least one of the aluminum sheets. Furthermore, a method for producing a cooling device and also a power circuit comprising a heat sink as described here are presented.
Opening claim text (preview).
What is claimed is: 1. A cooling device comprising: an aluminum heat sink formed from a plurality of aluminum sheets stacked one above another and connected to one another, at least one aluminum sheet comprises cutouts which form a cooling channel covered by at least one of the aluminum sheets; at least one solder mediation layer connected to the aluminum heat sink by a solder layer; and a securing surface for securing and for heat absorption, the securing surface formed by a side of the solder mediation layer which faces away from the aluminum heat sink. 2. The cooling device of claim 1 , wherein the aluminum sheets are connected to one another by solder layers. 3. The cooling device of claim 1 , wherein the aluminum sheets are rolled aluminum sheets which are solderable by hard solder. 4. The cooling device of claim 1 , wherein the solder mediation layer is formed as a nickel layer and has a proportion by mass of nickel of at least 70% or 85% nickel. 5. The cooling device of claim 1 , wherein the solder mediation layer is formed as a nickel layer and has a proportion by mass of nickel of at least 95%, 98% or 99% nickel. 6. The cooling device of claim 1 , wherein the solder mediation layer has a thickness of not more than 150, 100 or 50 μm. 7. A power circuit comprising: a heat sink comprising: an aluminum heat sink formed from a plurality of aluminum sheets stacked one above another and connected to one another, at least one aluminum sheet comprises cutouts which form a cooling channel covered by at least one of the aluminum sheets; at least one solder mediation layer connected to the aluminum heat sink by a solder layer; and a securing surface for securing and for heat absorption, the securing surface formed by a side of the solder mediation layer which faces away from the aluminum heat sink; a circuit board having a conductor layer on both sides, which is connected to the solder mediation layer via a solder layer; and at least one semiconductor mounted on the circuit board on the side of the circuit board which faces away from the solder mediation layer. 8. The power circuit of claim 7 , wherein the semiconductor is a power semiconductor in the form of an unpackaged semiconductor which is secured on the circuit board by a soft solder layer. 9. The power circuit of claim 7 , wherein the aluminum sheets are connected to one another by solder layers. 10. The power circuit of claim 7 , wherein the aluminum sheets are rolled aluminum sheets which are solderable by hard solder. 11. The power circuit of claim 7 , wherein the solder mediation layer is formed as a nickel layer and has a proportion by mass of nickel of at least 70% or 85% nickel. 12. The cooling device of claim 7 , wherein the solder mediation layer is formed as a nickel layer and has a proportion by mass of nickel of at least 95%, 98% or 99% nickel. 13. The power circuit of claim 7 , wherein the solder mediation layer has a thickness of not more than 150, 100 or 50 μm.
Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title
by flowing liquids, e.g. forced water cooling · CPC title
having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title
Heat conductive materials · CPC title
from aluminium or aluminium alloys · CPC title
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