Microelectromechanical light emitter component, light emitter component and method for producing a microelectromechanical light emitter component

US10748732B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10748732-B2
Application numberUS-201816186678-A
CountryUS
Kind codeB2
Filing dateNov 12, 2018
Priority dateNov 13, 2017
Publication dateAug 18, 2020
Grant dateAug 18, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A microelectromechanical light emitter component comprises an emitter layer structure of the microelectromechanical light emitter component and an inductive structure of the microelectromechanical light emitter component. The inductive structure of the microelectromechanical light emitter component is configured to generate current in the emitter layer structure by electromagnetic induction, such that the emitter layer structure emits light. The emitter layer structure is electrically insulated from the inductive structure.

First claim

Opening claim text (preview).

What is claimed is: 1. A microelectromechanical light emitter component comprising: an emitter layer structure of the microelectromechanical light emitter component; an inductive structure of the microelectromechanical light emitter component, wherein the inductive structure is configured to generate current in the emitter layer structure by electromagnetic induction such that the emitter layer structure emits light, and wherein the emitter layer structure is electrically insulated from the inductive structure; and at least one section of a cavity arranged at least vertically between the emitter layer structure and the inductive structure, wherein the emitter layer structure is suspended by one or more elements in the cavity. 2. The microelectromechanical light emitter component as claimed in claim 1 , wherein the emitter layer structure is configured and arranged to be free of potential during operation of the microelectromechanical light emitter component. 3. The microelectromechanical light emitter component as claimed in claim 1 , wherein the one or more elements comprise a multiplicity of suspension and/or securing webs of the emitter layer structure extending to an edge of the cavity in order to suspend the emitter layer structure at the edge of the cavity. 4. The microelectromechanical light emitter component as claimed in claim 1 , wherein the one or more elements comprise a first insulating; and wherein the microelectromechanical light emitter component further comprises a second insulating layer arranged at least partially between the emitter layer structure and the inductive structure and adjoining the emitter layer structure and the inductive structure. 5. The microelectromechanical light emitter component as claimed in claim 1 , wherein the inductive structure is arranged with respect to the emitter layer structure such that eddy currents are induced in the emitter layer structure by the inductive structure based on an excitation current flowing through the inductive structure. 6. The microelectromechanical light emitter component as claimed in claim 1 , further comprising: a covering structure of the microelectromechanical light emitter component, wherein the covering structure has a recess in order to form the cavity, and wherein at least another section of the cavity is vertically between the covering structure and the emitter layer structure or the inductive structure. 7. The microelectromechanical light emitter component as claimed in claim 6 , wherein the covering structure has an optical filter in the recess such that light, emitted by the emitter layer structure and passing through the optical filter, has a spectral maximum at a particular optical wavelength. 8. The microelectromechanical light emitter component as claimed in claim 1 , further comprising: a multiplicity of emitter layer structures of the microelectromechanical light emitter component, wherein the multiplicity of emitter layer structures are distributed laterally and are electrically insulated from one another. 9. The microelectromechanical light emitter component as claimed in claim 1 , wherein the emitter layer structure comprises graphene, graphite, or a composite material comprising nanotubes. 10. The microelectromechanical light emitter component as claimed in claim 1 , wherein the inductive structure is a coil. 11. The microelectromechanical light emitter component as claimed in claim 1 , wherein the emitter layer structure is arranged between the inductive structure and a carrier substrate. 12. The microelectromechanical light emitter component as claimed in claim 1 , wherein the inductive structure is configured to receive an excitation current in order to excite light emission by the emitter layer structure. 13. The microelectromechanical light emitter component as claimed in claim 1 , further comprising: a first connection pad, of the microelectromechanical light emitter component, connected to a first connection end of the inductive structure, and a second connection pad, of the microelectromechanical light emitter component, connected to a second connection end of the inductive structure, wherein the first connection pad and the second connection pad are configured to be connected to an external driver circuit for providing an excitation current to the inductive structure. 14. The microelectromechanical light emitter component as claimed in claim 1 , wherein a distance between the emitter layer structure and the inductive structure is greater than 1 μm, and wherein the distance between the emitter layer structure and the inductive structure is less than 1 mm. 15. The microelectromechanical light emitter component as claimed in claim 1 , wherein the emitter layer structure is designed to heat up upon excitation of a defined induced current by the inductive structure in order to emit light having an intensity maximum at a frequency of greater than 300 GHz and less than 400 THz. 16. The microelectromechanical light emitter component as claimed in claim 1 , wherein the one or more elements comprise one or more suspension edges. 17. The microelectromechanical light emitter component as claimed in claim 1 , wherein the emitter layer structure is suspended circumferentially at an edge of the cavity. 18. The microelectromechanical light emitter component as claimed in claim 1 , wherein the emitter layer structure is connected to a reference potential during operation. 19. A light emitter component, comprising: an emitter layer structure; an inductive structure configured and arranged to generate current in the emitter layer structure by electromagnetic induction such that the emitter layer structure emits light; and at least one section of a cavity that extends vertically from the emitter layer structure as far as the inductive structure, wherein the emitter layer structure extends vertically as far as maximally to a lateral plane of the inductive structure, and wherein the emitter layer structure is suspended by one or more elements in the cavity. 20. A method for producing a microelectromechanical light emitter component, wherein the method comprises: forming an emitter layer structure of the microelectromechanical light emitter component; and forming an inductive structure of the microelectromechanical light emitter component, wherein at least one section of a cavity is arranged at least vertically between the emitter layer structure and the inductive structure, wherein the emitter layer structure is suspended by one or more elements in the cavity, wherein the inductive structure is configured to generate current in the emitter layer structure by electromagnetic induction during operation of the microelectromechanical light emitter component such that the emitter layer structure emits light, and wherein the emitter layer structure is electrically insulated from the inductive structure.

Assignees

Inventors

Classifications

  • H01K1/04Primary

    characterised by the material thereof · CPC title

  • characterised by the shape · CPC title

  • Vessels; Containers; Shields associated therewith · CPC title

  • One or more circuit elements structurally associated with the lamp · CPC title

  • H01J19/78Primary

    One or more circuit elements structurally associated with the tube · CPC title

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What does patent US10748732B2 cover?
A microelectromechanical light emitter component comprises an emitter layer structure of the microelectromechanical light emitter component and an inductive structure of the microelectromechanical light emitter component. The inductive structure of the microelectromechanical light emitter component is configured to generate current in the emitter layer structure by electromagnetic induction, su…
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification H01K1/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 18 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).