Strain sensing element and pressure sensor

Patent metadata

Field	Value
Publication number	US-10746526-B2
Application number	US-201815920492-A
Country	US
Kind code	B2
Filing date	Mar 14, 2018
Priority date	Mar 24, 2015
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

According to one embodiment, a strain sensing element includes a film unit being deformable, a first and a second magnetic unit, and a strain sensor. The first magnetic unit is provided on the film unit and is arranged with the film unit in a first direction. The first magnetic unit includes a first magnetic body layer and a first intermediate magnetic layer. The second magnetic unit is provided on the film unit and is arranged with the first magnetic unit in a second direction crossing the first direction. The second magnetic unit includes a second magnetic body layer and a second intermediate magnetic layer. The strain sensor is provided on the film unit between the first magnetic unit and the second magnetic unit. An electrical characteristic of the strain sensor changes according to a deformation of the film unit.

First claim

What is claimed is:

1. A sensor, comprising:
a supporter;
a film unit, the supporter supporting the film unit, the film unit being deformable;
a first strain sensor provided at the film unit, an electrical characteristic of the first strain sensor changing according to a deformation of the film unit; and
a first magnetic unit, a direction from the supporter toward the first magnetic unit being along a first direction from the film unit toward the first strain sensor.

2. The sensor according to claim 1 , wherein
the film unit includes an outer edge supported by the supporter,
the outer edge is along a second direction crossing the first direction, and
a third direction from the first magnetic unit toward the first strain sensor is inclined with the second direction.

3. The sensor according to claim 2 , wherein an angle between the second direction and the third direction is not less than 40 degrees and not more than 50 degrees.

4. The sensor according to claim 1 , wherein the first strain sensor includes:
a first magnetic layer;
a second magnetic layer separated from the first magnetic layer in the first direction; and
a first intermediate layer provided between the first magnetic layer and the second magnetic layer.

Assignees

• Toshiba Kk

Inventors

• Kaji Shiori
• Fukuzawa Hideaki
• Nagata Tomohiko
• Hori Akio
• Fuji Yoshihiko

Classifications

• G01L9/0042

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title

• G01B7/18

  using change in resistance · CPC title

• G01B7/24 Primary

  using change in magnetic properties · CPC title

• G01L9/16

  by making use of variations in the magnetic properties of material resulting from the application of stress · CPC title