Vanadium oxide film and process for producing same

Patent metadata

Field	Value
Publication number	US-10745289-B2
Application number	US-201515520339-A
Country	US
Kind code	B2
Filing date	Oct 26, 2015
Priority date	Oct 27, 2014
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.

First claim

What is claimed is:

1. A vanadium oxide film, wherein:
a portion of vanadium is replaced by:
one or more metals selected from nickel, iron, and aluminum; and
copper,

the amount of substance of vanadium is 80 mol% or more and less than 100 mol% based on the sum of the amount of substance of vanadium and the amount of substance of the metals replacing vanadium, and
a portion of vanadium is replaced by aluminum and copper, and the amount of substance of aluminum is 7 to 10 mol% based on the total sum of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper.

2. A vanadium oxide film, wherein:
a portion of vanadium is replaced by:
one or more metals selected from nickel, iron, and aluminum; and
copper,

an absolute value of a temperature coefficient of resistance is 3%/° C. or more in a temperature range of 0 to 80° C., and the film shows substantially no hysteresis of resistivity changes due to temperature rising/falling in a temperature range of 20 to 100° C., and
a portion of vanadium is replaced by aluminum and copper, and the amount of substance of aluminum is 7 to 10 mol% based on the total sum of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper.

3. A vanadium oxide film, wherein:
a portion of vanadium is replaced by:
one or more metals selected from nickel, iron, and aluminum; and
copper,

the absolute value of the temperature coefficient of resistance is 5%/° C. or more in a certain temperature region of 20° C. or more, and
a portion of vanadium is replaced by aluminum and copper, and the amount of substance of aluminum is 7 to 10 mol% based on the total sum of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper.

4. An infrared sensor comprising the vanadium oxide film according to claim 1 .

5. Light control glass comprising the vanadium oxide film according to claim 1 .

6. An infrared sensor comprising the vanadium oxide film according to claim 2 .

7. Light control glass comprising the vanadium oxide film according to claim 2 .

8. An infrared sensor comprising the vanadium oxide film according to claim 3 .

9. Light control glass comprising the vanadium oxide film according to claim 3 .

Assignees

• Aist

Inventors

• Tsuchiya Tetsuo
• Ishizaki Haruo
• Nakajima Tomohiko
• Shinoda Kentaro

Classifications

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/265

  using solutions · CPC title

• C01G31/00

  Compounds of vanadium · CPC title

• C01G53/00

  Compounds of nickel · CPC title