Pressure sensor and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10741746-B2
Application number	US-201816163934-A
Country	US
Kind code	B2
Filing date	Oct 18, 2018
Priority date	Dec 5, 2017
Publication date	Aug 11, 2020
Grant date	Aug 11, 2020

Abstract

Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

First claim

What is claimed is:

1. A silicon nanowire pressure sensor comprising:
a lower substrate having a diaphragm recess in a lower surface thereof;
an upper substrate having a first surface attached to an upper surface of the lower substrate;
a resistive portion including a silicon nanowire formed on a first surface of the upper substrate and exposed on a second surface of the upper substrate; and
a diaphragm region formed by etching a center portion of the second surface of the upper substrate with alignment reference of the resistive portions,
wherein the diaphragm recess is larger than the diaphragm region,
wherein a plurality of silicon blocks is formed on the second surface of the upper substrate to be spaced from each other by locally etching the second surface of the upper substrate and electrically connected only via the resistive portion, and
wherein side walls of a part of the silicon blocks constitute a boundary of the diaphragm region.

2. The silicon nanowire pressure sensor according to claim 1 , wherein the resistive portion includes first resistive portions formed inside the diaphragm region and second resistive portions formed outside the diaphragm region.

3. The silicon nanowire pressure sensor according to claim 2 , wherein the number of silicon blocks is four and the four silicon blocks are positioned in four quadrants of the upper substrate respectively,
the number of the first resistive portions is two and the two first resistive portions are disposed at boundaries of the quadrants so as to be spaced from each other with respect to the center of the upper substrate, and the two first resistive portions electrically connect two adjacent silicon blocks to each other among the four silicon blocks,
the number of second resistive portions is two and the two second resistive portions are disposed at boundaries of the quadrants so as to be spaced from each other with respect to the center of the upper substrate in a direction perpendicular to the direction in which the first resistive portions are spaced, and the two second resistive portions electrically connect two adjacent silicon blocks to each other among the four silicon blocks.

4. The silicon nanowire pressure sensor according to claim 3 , further comprising electrodes formed on the respective silicon blocks.

Assignees

• Korea Electronics Technology

Inventors

• Jung Suk Won
• Cho Nam Kyu

Classifications

• H10D62/119

  Nanowire, nanosheet or nanotube semiconductor bodies · CPC title

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• G01L9/0042 Primary

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title

• G01L9/0055

  bonded on a diaphragm · CPC title

• H10N30/093

  Forming inorganic materials · CPC title