Switchable superconducting Josephson junction device for low energy information storage and processing

Patent metadata

Field	Value
Publication number	US-10741744-B2
Application number	US-201816139938-A
Country	US
Kind code	B2
Filing date	Sep 24, 2018
Priority date	Sep 22, 2017
Publication date	Aug 11, 2020
Grant date	Aug 11, 2020

Abstract

A switchable Josephson junction is provided that includes a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments. A first superconducting layer that is positioned between any two of the ferromagnetic insulators, wherein the conductive state is controlled by the relative magnetization orientation of the ferromagnetic insulators where the first superconducting layer is superconducting when the two magnetizations are aligned in antiparallel but it turns normally conducting when the magnetic alignment is parallel. A second superconducting layer is adjacent one of the ferromagnetic layers, wherein Josephson tunneling occurs between the first superconducting layer and second superconducting layer across one of the ferromagnetic layers.

First claim

What is claimed is:

1. An exchange field junction comprising:
a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments;
a first superconducting layer that is positioned between two of the ferromagnetic insulators, wherein the conductive state is controlled by the relative magnetization orientation of the ferromagnetic insulators where the first superconducting layer is superconducting when the two magnetizations are aligned in antiparallel but it turns normally conducting when the magnetic alignment is parallel; and
a second superconducting layer that is positioned between any two of the ferromagnetic layers, wherein Josephson tunneling occurs between the first superconducting layer and second superconducting layer across one of the ferromagnetic layers.

2. The exchange field junction of claim 1 , wherein the ferromagnetic insulators comprise gadolinium nitride (GdN).

3. The exchange field junction of claim 1 , wherein the first superconducting layer comprises niobium (Nb).

4. The exchange field junction of claim 1 , wherein the second superconducting layer comprises niobium nitride (NbN).

5. The exchange field junction of claim 4 , wherein the second superconducting layer is formed on an aluminum nitride (AlN) layer.

6. A switchable Josephson junction comprising:
a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments;
a first superconducting layer that is positioned between any two of the ferromagnetic insulators, wherein the conductive state is controlled by the relative magnetization orientation of the ferromagnetic insulators where the first superconducting layer is superconducting when the two magnetizations are aligned in antiparallel but it turns normally conducting when the magnetic alignment is parallel; and
a second superconducting layer that is positioned between any two of the ferromagnetic layers, wherein Josephson tunneling occurs between the first superconducting layer and second superconducting layer across one of the ferromagnetic layers.

7. The switchable Josephson junction of claim 6 , wherein the ferromagnetic insulators comprise gadolinium nitride (GdN).

8. The switchable Josephson junction of claim 6 , wherein the first superconducting layer comprises niobium (Nb).

9. The switchable Josephson junction of claim 6 , wherein the second superconducting layer comprises niobium nitride (NbN).

10. The switchable Josephson junction of claim 9 , wherein the second superconducting layer is formed on an aluminum nitride (AlN) layer.

11. A method of forming an exchange field junction comprising:
providing a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments;
positioning a first superconducting layer between any two of the ferromagnetic insulators; and
positioning a second superconducting layer so that it is positioned between any two of the ferromagnetic layers, wherein Josephson tunneling occurs between the first superconducting layer and second superconducting layer across one of the ferromagnetic layers having a magnetic alignment that is antiparrellel relative to the other, wherein the magnetic alignment is controlled by the conducting state of the first superconducting layer.

12. The method of claim 11 , wherein the ferromagnetic insulators comprise gadolinium nitride (GdN).

13. The method of claim 11 , wherein the first superconducting layer comprises niobium (Nb).

14. The method of claim 11 , wherein the second superconducting layer comprises niobium nitride (NbN).

15. The method of claim 14 , wherein the second superconducting layer is formed on an aluminum nitride (AlN) layer.

16. A switchable Josephson junction comprising:
a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments;
a first superconducting layer that is positioned between any two of the ferromagnetic insulators, wherein the conductive state is controlled by the relative magnetization orientation of the neighboring ferromagnetic insulators where the first superconducting layer is superconducting when the two magnetization are aligned in antiparallel but it turns normally conducting when the two magnetization are parallel; and
a second superconducting layer that is positioned between any two of the ferromagnetic insulators, wherein the conductive state is controlled by the relative magnetization orientation of the neighboring ferromagnetic insulators where the second superconducting layer is superconducting when the two magnetization are aligned in antiparallel but it turns normally conducting when the two magnetization are parallel,
wherein Josephson tunneling is controlled by relative magnetic alignment of the three ferromagnetic insulators occurs between the first superconducting layer and second superconducting layer when they are superconducting states across the ferromagnetic layers positioned between the first superconducting layer and second superconducting layer, wherein the tunneling behavior have four states depending on the relative magnetization orientation.

17. The switchable Josephson junction of claim 16 , wherein the ferromagnetic insulators comprise gadolinium nitride (GdN).

18. The switchable Josephson junction of claim 16 , wherein the first superconducting layer comprises niobium (Nb).

19. The switchable Josephson junction of claim 16 , wherein the second superconducting layer comprises niobium nitride (NbN).

20. The switchable Josephson junction of claim 19 , wherein the second superconducting layer is formed on an aluminum nitride (AlN) layer.

21. A method of forming an exchange field junction comprising:
providing a plurality of ferromagnetic insulators that are defined by their respective magnetic alignments;
positioning a first superconducting layer between any two of the ferromagnetic insulators; and
positioning a second superconducting layer so that it is positioned between any two of the ferromagnetic insulators, wherein Josephson tunneling occurs between the first superconducting layer and second superconducting layer across the ferromagnetic layers positioned between the first superconducting layer and second superconducting layer where the ferromagnetic layers have magnetic alignments that are not all the same,
wherein the magnetic alignments are controlled by the conducting state of the first superconducting layer and second superconducting layer.

22. The method of claim 21 , wherein the ferromagnetic insulators comprise gadolinium nitride (GdN).

23. The method of claim 21 , wherein the first superconducting layer comprises niobium (Nb).

24. The method of claim 21 , wherein the second superconducting layer comprises niobium nitride (NbN).

25. The method of claim 24 , wherein the second superconducting layer is formed on an aluminum nitride (AlN) layer.

26. A switchable Josephson junction comprising:
a junction that comprises at one least ferromagnetic insulator; and
a first topological insulator (TI) layer positioned on the junction
a first high atomic number (Z) layer or a bilayer that comprises a second TI layer and a plurality of second high Z layers that is adjacent to the at least one ferromagnetic insulator; and
a dielectric layer that is placed on the first TI layer or the first high Z layer, or the bilayer; and
a metal electrode adjacent to the dielectric layer, wherein the magnetization of th

Assignees

• Massachusetts Inst Technology

Inventors

• Moodera Jagadeesh S
• Sandoval Juan Pedro Cascales
• Takamura Yota

Classifications

• H10N60/805

  for Josephson-effect devices · CPC title

• H10N60/12 Primary

  Josephson-effect devices · CPC title

• H10N60/30

  Devices switchable between superconducting and normal states · CPC title

• H10N60/851

  Organic superconductors · CPC title

• H10N60/128 Primary

  having three or more electrodes, e.g. transistor-like structures · CPC title