Metal chalcogenides for pseudocapacitive applications

US10734649B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10734649-B2
Application numberUS-201615359996-A
CountryUS
Kind codeB2
Filing dateNov 23, 2016
Priority dateNov 24, 2015
Publication dateAug 4, 2020
Grant dateAug 4, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.

First claim

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What is claimed is: 1. A material comprising, a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, wherein the metal dichalcogenide does not undergo a first order phase transition between 1T and triclinic phases upon intercalation of Li ions, Na ions, Mg ions, or Ca ions and wherein the defected-structure facilitates a pseudocapacitive charge storage mechanism. 2. The material of claim 1 , wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof. 3. The material of claim 1 , wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 . 4. A material comprising: a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism; wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof; wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca ions; and wherein the metal dichalcogenide does not undergo a first order phase transition between 1T and triclinic phases upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. 5. A material comprising: a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism; wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 ; and wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca ions without undergoing a first order phase transition between 1T and triclinic phases. 6. A composite electrode, comprising: (a) a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, wherein the metal dichalcogenide does not undergo a first order phase transition between 1T and triclinic phases upon intercalation of Li ions, Na ions, Mg ions, or Ca ions, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism; (b) a carbon derivative; and (c) a binder; (d) wherein said synthetic metal dichalcogenide-, said carbon derivative, and said binder are intermixed to form a composite electrode. 7. The composite electrode of claim 6 , wherein the binder is polyacrylic acid. 8. The composite electrode of claim 6 , wherein the carbon derivative comprises a plurality of carbon fibers, or carbon black, or carbon black and a plurality of carbon fibers. 9. The composite electrode of claim 6 , wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof. 10. The composite electrode of claim 6 , wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 . 11. The composite electrode of claim 6 : wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof; and wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca. 12. The composite electrode of claim 6 : wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 ; and wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca. 13. The composite electrode of claim 6 , wherein said composite electrode is a component of a charge storage device. 14. The composite electrode of claim 13 , wherein the charge storage device comprises an electrochemical cell, a symmetric capacitor, or an asymmetric capacitor. 15. The composite electrode of claim 14 , wherein said electrochemical cell comprises said composite electrode and a Li-ion, Na-ion, Mg-ion, or Ca-ion cathode.

Assignees

Inventors

Classifications

  • Energy storage using batteries · CPC title

  • Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium · CPC title

  • Li-accumulators · CPC title

  • H01M4/5815Primary

    Sulfides · CPC title

  • being polymers · CPC title

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What does patent US10734649B2 cover?
A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to …
Who is the assignee on this patent?
Univ California
What technology area does this patent fall under?
Primary CPC classification H01M4/5815. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 04 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).