Light emitting diode having distributed Bragg reflector

Patent metadata

Field	Value
Publication number	US-10734554-B2
Application number	US-201916354815-A
Country	US
Kind code	B2
Filing date	Mar 15, 2019
Priority date	Aug 24, 2017
Publication date	Aug 4, 2020
Grant date	Aug 4, 2020

Abstract

A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.

First claim

What is claimed is:

1. A light emitting diode comprising:
a light emitting structure including an active layer;
a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure; and
an interfacial layer disposed between the light emitting structure and the first DBR,
wherein the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index, the first and second material layers being alternately stacked one above another,
wherein the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each layer of the first material layers and the second material layers, and
wherein one of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.

2. The light emitting diode according to claim 1 , wherein the interfacial layer comprises a MgF 2 layer, the first material layers comprise SiO 2 layers, and the second material layers comprise TiO 2 layers.

3. The light emitting diode according to claim 1 , wherein the interfacial layer is subjected to a tensile stress, the first sub-layer is subjected to a tensile stress, and the second sub-layer is subjected to a compressive stress.

4. The light emitting diode according to claim 3 , wherein the first sub-layer is disposed closer to the interfacial layer than the second sub-layer.

5. The light emitting diode according to claim 3 , wherein the second material layers other than the one closest to the interfacial layer have a higher density than the first sub-layer.

6. The light emitting diode according to claim 1 , wherein the one of the second material layers closest to the interfacial layer contacts the interfacial layer.

7. The light emitting diode according to claim 1 , further comprising a substrate,
wherein the light emitting structure is disposed on the substrate.

8. The light emitting diode according to claim 7 , wherein the interfacial layer contacts the substrate and opposes the light emitting structure with the substrate interposed therebetween.

9. The light emitting diode according to claim 8 , further comprising a second DBR disposed on the light emitting structure.

10. The light emitting diode according to claim 9 , wherein the second DBR is disposed within an upper region of the active layer.

11. The light emitting diode according to claim 10 , further comprising a transparent electrode layer covering the second DBR.

12. The light emitting diode according to claim 7 , wherein the light emitting structure is disposed between the substrate and the interfacial layer.

13. The light emitting diode according to claim 12 , wherein the first DBR covers an upper surface and side surfaces of the light emitting structure.

14. The light emitting diode according to claim 13 , further comprising a second DBR disposed between the first DBR and the light emitting structure.

15. The light emitting diode according to claim 14 , wherein the second DBR is disposed within the upper region of the active layer.

16. The light emitting diode according to claim 15 , further comprising a transparent electrode layer disposed between the first DBR and the second DBR, and covering the second DBR.

17. The light emitting diode according to claim 7 , wherein the first DBR is disposed within the upper region of the active layer.

18. The light emitting diode according to claim 1 , further comprising a surface layer disposed on an uppermost layer of the first DBR opposite to the interfacial layer,
wherein the surface layer comprises the same material as the first material layers in the first DBR and has a greater thickness than each of the first material layers.

19. The light emitting diode according to claim 1 , wherein:
the first DBR comprises:
a first region including a first group of first material layers having optical thicknesses greater than 0.25λ+10% and a second group of first material layers having optical thicknesses greater than 0.25λ−10% and less than 0.25λ+10%, the first and second groups of first material layers are alternately arranged in the first region;
a second region including a third group of consecutively arranged first material layers having optical thicknesses less than 0.25λ−10%; and
a third region disposed between the first region and the second region and including at least one of a fourth group of first material layers having an optical thickness smaller than 0.25λ−10% and at least one of a fifth group of first material layers having an optical thickness greater than 0.25λ; and

the first region is placed closer to the light emitting structure than the second region.

20. The light emitting diode according to claim 19 , wherein:
at least one of the first group of first material layers has an optical thickness less than 0.3λ+10%; and
the third group of first material layers has an optical thickness greater than 0.2λ−10%.

21. The light emitting diode according to claim 19 , wherein an optical thickness deviation of the first material layers in the first region is greater than that of the first material layers in the second region.

22. The light emitting diode according to claim 19 , wherein:
the second material layers in the first region include a first group of second material layers having optical thicknesses greater than 0.25λ+10% and a second group of second material layers having optical thicknesses greater than 0.25λ−10% and less than 0.25λ+10%;
the second material layers in the second region include a third group of consecutively arranged second material layers having optical thicknesses less than 0.25λ−10%; and
the second material layers in the third region include at least one of a fourth group of second material layers having an optical thickness less than 0.25λ−10% and at least one of a fifth group of second material layers having an optical thickness greater than 0.25λ and less than 0.25λ+10%.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Heo Min Chan
• Kim Kyoung Wan
• Kim Ye Seul
• Ryu Yong Woo

Classifications

• H10H20/833

  Transparent materials · CPC title

• H10H20/815

  having stress relaxation structures, e.g. buffer layers · CPC title

• H10H20/814 Primary

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/841 Primary

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title