Semiconductor memory device capable of shortening erase time
US-2017148524-A1 · May 25, 2017 · US
US10732846B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10732846-B2 |
| Application number | US-201916243956-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 9, 2019 |
| Priority date | Sep 29, 2014 |
| Publication date | Aug 4, 2020 |
| Grant date | Aug 4, 2020 |
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A computer-implemented method according to one embodiment includes determining, after writing data to a non-volatile memory block, one or more delta threshold voltage shift (TVS Δ ) values. One or more overall threshold voltage shift values for the data written to the non-volatile memory block are calculated, the values being a function of the one or more TVS Δ values to be used when writing data to the non-volatile memory block. The overall threshold voltage shift values are stored. A base threshold voltage shift (TVS BASE ) value, the one or more TVS Δ values, or both the TVS BASE value and the one or more TVS Δ values are re-calibrated during a background health check after a predetermined number of background health checks without calibration are performed.
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What is claimed is: 1. A computer-implemented method, comprising: determining, after writing data to a non-volatile memory block, one or more delta threshold voltage shift (TVS Δ ) values configured to track temporary changes with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors; calculating one or more overall threshold voltage shift values for the data written to the non-volatile memory block, the one or more overall threshold voltage shift values being a function of the one or more TVS Δ values to be used when writing data to the non-volatile memory block; and storing the one or more overall threshold voltage shift values; and re-calibrating a base threshold voltage shift (TVS BASE ) value, the one or more TVS Δ values, or both the base threshold voltage shift (TVS BASE ) value and the one or more TVS Δ values, during a background health check after a predetermined number of background health checks without calibration are performed. 2. The computer-implemented method as recited in claim 1 , comprising resetting the one or more TVS Δ values when the non-volatile memory block is erased. 3. The computer-implemented method as recited in claim 1 , comprising applying the one or more overall threshold voltage shift values to a read operation of the data stored to the non-volatile memory block upon receiving a read request. 4. The computer-implemented method as recited in claim 1 , comprising: reading one or more TVS values from a non-volatile controller memory; resetting a program/erase cycle count since last calibration after calibrating the one or more overall threshold voltage shift values; and storing the one or more TVS Δ values, and the program/erase cycle count since last calibration to the non-volatile controller memory. 5. The computer-implemented method as recited in claim 1 , wherein each overall threshold voltage shift value equals a sum of a corresponding base threshold voltage shift (TVS BASE ) value and a corresponding TVS Δ value, the TVS BASE value configured to track permanent changes in underlying threshold voltage distributions due to cycling of the non-volatile memory block. 6. The computer-implemented method as recited in claim 1 , wherein the predetermined number of background health checks without calibration is from 1 to 5. 7. The computer-implemented method as recited in claim 6 , wherein a block is marked for re-calibration when a program/erase cycle count since last calibration exceeds a predetermined threshold, wherein blocks marked for re-calibration are forced to be calibrated in a read sweep background health check, and wherein the blocks are unmarked after re-calibration is completed. 8. The computer-implemented method as recited in claim 6 , wherein the re-calibration is not performed when a program/erase cycle count is lower than a predetermined threshold. 9. The computer-implemented method as recited in claim 1 , wherein the one or more TVS Δ values are determined periodically in the background without interrupting normal operations directed at the non-volatile memory block. 10. The computer-implemented method as recited in claim 1 , comprising grouping together physical non-volatile pages which have similar TVS Δ values into a page group. 11. A computer-implemented method, comprising: determining, after writing data to a non-volatile memory block, one or more base threshold voltage shift (TVS BASE ) values configured to track permanent changes in underlying threshold voltage distributions due to cycling of the non-volatile memory block; calculating an overall threshold voltage shift value for the data written to the non-volatile memory block, the overall threshold voltage shift value being a function of the one or more TVS BASE values; and storing the overall threshold voltage shift value. 12. The computer-implemented method as recited in claim 11 , comprising resetting the one or more TVS Δ values when the non-volatile memory block is erased. 13. The computer-implemented method as recited in claim 11 , comprising determining, after the writing of data to the non-volatile memory block, one or more delta threshold voltage shift (TVS Δ ) values configured to track temporary changes, with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors. 14. The computer-implemented method as recited in claim 11 , comprising applying the overall threshold voltage shift value to a read operation of the data stored to the non-volatile memory block upon receiving a read request. 15. The computer-implemented method as recited in claim 11 , comprising: reading one or more TVS values from a non-volatile controller memory; resetting a program/erase cycle count since last calibration after calibrating the overall threshold voltage shift value; and storing the one or more TVS BASE values and the program/erase cycle count since last calibration to the non-volatile controller memory. 16. The computer-implemented method as recited in claim 11 , comprising re-calibrating the one or more TVS BASE values during a background health check after a predetermined number of background health checks without calibration are performed, wherein the predetermined number of background health checks without calibration is from 1 to 5. 17. The computer-implemented method as recited in claim 11 , wherein at least one of the one or more TVS BASE values and the one or more TVS Δ values are determined periodically in the background without interrupting normal operations directed at the non-volatile memory block. 18. The computer-implemented method as recited in claim 11 , comprising: grouping together physical non-volatile pages which have similar TVS BASE and TVS Δ values into a page group; and creating a mapping that correlates the TVS BASE values as tracked per page group to actual read voltage shift values. 19. A computer program product for managing threshold voltage shifts in non-volatile memory, the computer program product comprising a computer readable storage medium having program instructions embodied therewith, the program instructions executable by a processing circuit to cause the processing circuit to: calculate, by the processing circuit, an overall threshold voltage shift value for data written to a non-volatile memory block, the overall threshold voltage shift value being a function of a base threshold voltage shift (TVS BASE ) value and delta threshold voltage shift (TVS Δ ) value to be used when writing data to the non-volatile memory block, the TVS BASE value representing a permanent change in underlying threshold voltage distributions due to cycling of the non-volatile memory block, the TVS Δ value representing a temporary change with respect to a change in the underlying threshold voltage distributions due to retention and/or read disturb errors; and apply, by the processing circuit, the overall threshold voltage shift value to a read operation of the data stored to the non-volatile memory block upon receiving a read request. 20. The computer program product as recited in claim 19 , comprising program instructions executable by the processing circuit to cause the processing circuit to re-calibrate the one or more TVS BASE values during a background health check after a predetermined number of background health checks without calibration are performed, wherein the predetermined number of background health checks without calibration is from 1 to 5.
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