Resist underlayer composition, and method of forming patterns using the composition

Patent metadata

Field	Value
Publication number	US-10732504-B2
Application number	US-201815866809-A
Country	US
Kind code	B2
Filing date	Jan 10, 2018
Priority date	Feb 3, 2017
Publication date	Aug 4, 2020
Grant date	Aug 4, 2020

Abstract

A resist underlayer composition and a method of forming patterns using the resist underlayer composition, the resist underlayer composition including a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and a solvent,

First claim

What is claimed is:

1. A resist underlayer composition, comprising:
a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and
a solvent:

wherein, in Chemical Formula 1,
B is a divalent group represented by Chemical Formula Z, oxygen, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C1 to C30 hetero alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, or a combination thereof,
Y and Y′ are each independently a single bond, oxygen, a carbonyl, —(CH 2 )O—, —(CH 2 )S—, —(CH 2 )NH—, or a combination thereof,
R 2 to R 9 are each independently hydrogen, a hydroxy group, a halogen, a substituted or unsubstituted vinyl group, a substituted or unsubstituted C1 to C10 alkoxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, or a combination thereof,
a, b, c, and d are each independently an integer ranging from 0 to 100, provided that a sum of a and b is greater than or equal to 1, and a sum of c and d is greater than or equal to 1, and
* is a linking point,

wherein, in Chemical Formula Z,
A is a substituted or unsubstituted aromatic ring group, a substituted or unsubstituted aliphatic cyclic group, a substituted or unsubstituted heteroaromatic ring group, a substituted or unsubstituted heteroaliphatic cyclic group, or a combination thereof,
X is hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C10 alkoxy group, a halogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 heteroaryl group, a substituted or unsubstituted vinyl group, or a combination thereof, and
* is a linking point,

wherein in Chemical Formula 2,
R 1 is a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, a group represented by Chemical Formula B, or a combination thereof, and
* is a linking point,

wherein in Chemical Formula B,
G and G′ are each independently a hydroxy group, a substituted or unsubstituted C1 to C10 alkoxy group, a halogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 heteroaryl group, a substituted or unsubstituted vinyl group, or a combination thereof,
m and n are each independently an integer ranging from 1 to 10, and
* is a linking point.

2. The resist underlayer composition as claimed in claim 1 , wherein:
B is a group represented by Chemical Formula Z, and
in Chemical Formula Z, X is a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, or a substituted or unsubstituted C2 to C30 alkynyl group.

3. The resist underlayer composition as claimed in claim 1 , wherein:
B is a group represented by Chemical Formula Z, and
in Chemical Formula Z, A is a heteroaromatic ring group or a heteroaliphatic cyclic group.

4. The resist underlayer composition as claimed in claim 3 , wherein in Chemical Formula Z, X is linked with a heteroatom included in A.

5. The resist underlayer composition as claimed in claim 1 , wherein a weight average molecular weight of the polymer is about 1,000 to about 100,000.

6. The resist underlayer composition as claimed in claim 1 , further comprising a cross-linking agent having two or more cross-linking sites.

7. The resist underlayer composition as claimed in claim 1 , further comprising a surfactant, a thermal acid generator, and a plasticizer, or a combination thereof.

8. A method of forming patterns, the method comprising:
forming an etching subject layer on a substrate,
coating the resist underlayer composition as claimed in claim 1 on the etching subject layer to form a resist underlayer,
forming a photoresist pattern on the resist underlayer, and
etching the resist underlayer and the etching subject layer sequentially using the photoresist pattern as an etching mask.

9. The method as claimed in claim 8 , wherein forming the photoresist pattern includes:
forming a photoresist layer on the resist underlayer,
exposing the photoresist layer, and
developing the photoresist layer.

10. The method as claimed in claim 8 , wherein after coating the resist underlayer composition, forming the resist underlayer further includes heat-treating the resist underlayer composition at a temperature of about 100° C. to about 500° C.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Bae Shinhyo
• Kwon Soonhyung
• Park Hyeon
• Baek Jaeyeol
• Joo Beomjun
• Choi Yoojeong
• Han Kwen-Woo

Classifications

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• G03F7/42

  Stripping or agents therefor · CPC title

• G03F7/34

  Imagewise removal by selective transfer, e.g. peeling away · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title