Heating element structure, method of forming the same, and heating device including the heating element structure

Patent metadata

Field	Value
Publication number	US-10728958-B2
Application number	US-201815868451-A
Country	US
Kind code	B2
Filing date	Jan 11, 2018
Priority date	Jul 31, 2017
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 4×10 −6 per Kelvin or less.

First claim

What is claimed is:

1. A heating element structure comprising:
a conductive metal substrate;
a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal;
electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and
a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle,
wherein a difference between a coefficient of thermal expansion of the first matrix material and a coefficient of thermal expansion of the particle is about 4×10 −6 per Kelvin or less.

2. The heating element structure of claim 1 , wherein the first matrix material has a coefficient of thermal expansion of about 8×10 −6 per Kelvin to about 12×10 −6 per Kelvin.

3. The heating element structure of claim 1 , wherein the particle has a coefficient of thermal expansion of about 7×10 −6 per Kelvin to about 13×10 −6 per Kelvin.

4. The heating element structure of claim 3 , wherein the coefficient of thermal expansion of the particle is greater than the coefficient of thermal expansion of the matrix material.

5. The heating element structure of claim 1 , wherein the difference between the coefficient of thermal expansion of the first matrix material and the coefficient of thermal expansion of the particle is about 1×10 −6 /K or less.

6. The heating element structure of claim 1 , wherein the particle comprises at least one of an oxide, a boride, a nitride, a carbide, or a chalcogenide.

7. The heating element structure of claim 1 , wherein the particle comprises at least one of Al 2 O 3 , Al 2 SiO 5 , BeO, BN, Mg 2 Al 4 Si 5 O 18 , Mg 2 SiO 4 , TiO 2 , BaTiO 3 , ZrO 2 , SiO 2 , or MgO.

8. The heating element structure of claim 1 , wherein the particle comprises at least one of MgO, Mg 2 SiO 4 , or TiO 2 .

9. The heating element structure of claim 1 , wherein an amount of the particle is about 1 weight percent to about 10 weight percent based on a total weight of the matrix material and the particle.

10. The heating element structure of claim 1 , wherein the particle has a size of about 1 nanometer to about 10 micrometers.

11. The heating element structure of claim 1 , wherein the first matrix material comprises at least one of a non-oxide glass, an oxide glass, a ceramic-glass composite, and a polymer.

12. The heating element structure of claim 1 , wherein the first matrix material comprises at least one of SiO 2 , BaO, B 2 O 3 , Al 2 O 3 , MgO, ZrO 2 , CuO, NiO, CoO, MnO, TiO 2 , K 2 O, Na 2 O, Li 2 O, P 2 O 4 , ZnO, Y 2 O 3 , K 2 O, CaO, SrO, Cr 2 O 3 , or Fe 2 O 3 .

13. The heating element structure of claim 1 , wherein the first matrix material comprises an oxide glass comprising at least one of BaO, SiO 2 , Al 2 O 3 , B 2 O 3 , NiO, CoO, SrO, Cr 2 O 3 , Fe 2 O 3 , MgO, TiO 2 , ZrO 2 , Li 2 O, Na 2 O, or K 2 O.

14. The heating element structure of claim 1 , wherein the first matrix material comprises BaO, SiO 2 , Al 2 O 3 , B 2 O 3 , NiO, CoO, a mixture of SrO, Cr 2 O 3 , Fe 2 O 3 , MgO, TiO 2 , and ZrO 2 , and a mixture of Li 2 O, Na 2 O, and K 2 O,
wherein,
a weight ratio of BaO to SiO 2 is about 1:1 to about 5:1,
an amount of NiO is about 0.1 weight percent to about 30.0 percent,
an amount of CoO is about 0.1 weight percent to about 30.0 percent
an amount of the mixture of SrO, Cr 2 O 3 , Fe 2 O 3 , MgO, TiO 2 , and ZrO 2 is about 0.1 weight percent to about 30.0 percent and
an amount of the mixture of Li 2 O, Na 2 O, and K 2 O is about 0.1 weight percent to about 2.2 weight percent, wherein all weight percents are based on a total weight of the oxide glass.

15. The heating element structure of claim 1 , wherein the first matrix material comprises an oxide glass comprising BaO, SiO 2 , Al 2 O 3 , B 2 O 3 , NiO, CoO, a mixture of SrO, Cr 2 O 3 , Fe 2 O 3 , MgO, TiO 2 , and ZrO 2 , and a mixture of Li 2 O, Na 2 O, and K 2 O, and
the particle of the insulating layer comprises at least one of MgO, Mg 2 SiO 4 , or TiO 2 ).

16. The heating element structure of claim 1 , wherein the matrix material of the insulating layer includes an oxide glass comprising at least one component selected from BaO (component A), SiO 2 (component B), Al 2 O 3 (component C), B 2 O 3 (component D), NiO (component E), CoO (component F), SrO, Cr 2 O 3 , Fe 2 O 3 , MgO, TiO 2 , and ZrO 2 (Component G), at least one component (component H) selected from Li 2 O, Na 2 O, and K 2 O, and at least one component (component I) selected from CaO, TiO 2 , ZnO, and ZrO 2 ,
a weight ratio of component A/component B is about 1 to about 5,
a content of component E is about 0.1 wt % to about 30.0 wt % based on a total weight of the oxide glass,
a content of component F is about 0.1 wt % to about 30.0 wt %,
a content of component G is about 0.1 wt % to about 30.0 wt %,
a content of component H is about 0.1 wt % to about 2.2 wt %, and
a content of component I is about 0.1 wt % to about 5.0 wt %.

17. The heating element structure of claim 1 , wherein the particle has a dielectric strength of about 5 kilovolts per millimeter or greater.

18. The heating element structure of claim 1 , wherein the first insulating layer comprising the first matrix material and the particle has a dielectric strength which is at least about 10% or greater than a dielectric strength of an insulating layer comprising only the matrix material.

19. The heating element structure of claim 1 , wherein the heating layer comprises a second matrix material and a filler.

20. The heating element structure of claim 19 , wherein the second matrix material comprises at least one of a silicon oxide, a lithium oxide, a nickel oxide, a cobalt oxide, a boron oxide, a potassium oxide, an aluminum oxide, a titanium oxide, a manganese oxide, a copper oxide, a zirconium oxide, a phosphorus oxide, a zinc oxide, a bismuth oxide, a lead oxide, or a sodium oxide;
wherein the silicon oxide comprises at least one of lithium (Li), nickel (Ni), cobalt (Co), boron (B), potassium (K), aluminum (Al), titanium (Ti), manganese (Mn), copper (Cu), zirconium (Zr), phosphorous (P), zinc (Zn), bismuth (Bi), lead (Pb), or sodium (Na).

21. The heating element structure of claim 20 , wherein the second matrix material comprises at least one of a polyimide, a polyphenylene sulfide, a polybutylene terephthalate, a polyamide-imide, a liquid crystalline polymer, polybutylene terephthalate polyethylene terephthalate, or a polyetheretherketone (PEEK).

22. The heating element structure of claim 20 , wherein the filler comprises at least of an oxide, a boride, a carbide, or a chalcogenide.

23. The heating element structure of claim 1 , wherein the electrodes are disposed between the heating layer and the conductive metal substrate, or the heating layer is disposed between the electrodes and the conductive metal substrate.

24. The heating element structure of claim 1 , wherein the heating element structure further comprises a second insulating layer in contact with the conductive metal substrate.

25. The heating element structure of claim 1 , wherein the first insulating layer has a thickness of about 50 micrometers to about 500 micrometers.

26. A heating device comprising the heating element structure of claim 1 .

27. The heating device of claim 25 , wherein the heating element structure is a plana

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Seyun
• Kim Jinhong
• Koh Haengdeog
• Kim Doyoon
• Kim Hajin
• Mizusaki Soichiro
• Bae Minjong
• Lee Changsoo

Classifications

• H05B2203/013

  Heaters using resistive films or coatings · CPC title

• H05B3/262

  the insulating base being an insulated metal plate · CPC title

• H05B3/16

  the conductor being mounted on an insulating base · CPC title

• H05B3/141 Primary

  Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds · CPC title

• H05B2203/017

  Manufacturing methods or apparatus for heaters · CPC title