Bulk acoustic wave resonator with multilayer piezoelectric structure

Patent metadata

Field	Value
Publication number	US-10727809-B2
Application number	US-201715826039-A
Country	US
Kind code	B2
Filing date	Nov 29, 2017
Priority date	Dec 15, 2016
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

A bulk acoustic wave (BAW) resonator has a bottom electrode, a top electrode over the bottom electrode, and a multilayer piezoelectric structure between the bottom electrode and the top electrode. The multilayer piezoelectric structure has a first piezoelectric layer having a first electromechanical coupling coefficient and a second piezoelectric layer having a second electromechanical coupling coefficient that is different than the first electromechanical coupling coefficient.

First claim

What is claimed is:

1. A bulk acoustic wave (BAW) resonator comprising:
a bottom electrode;
a top electrode over the bottom electrode;
a multilayer piezoelectric structure between the bottom electrode and the top electrode and comprising a first piezoelectric layer having a first electromechanical coupling coefficient and a second piezoelectric layer having a second electromechanical coupling coefficient that is different than the first electromechanical coupling coefficient;
a reflector below the bottom electrode; and
a supplemental reflector that is on the reflector and provided directly on a lateral side of the bottom electrode.

2. The BAW resonator of claim 1 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 2%.

3. The BAW resonator of claim 1 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 3%.

4. The BAW resonator of claim 1 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 4%.

5. The BAW resonator of claim 1 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 5%.

6. The BAW resonator of claim 1 wherein the first electromechanical coupling coefficient is 6.5% and the second electromechanical coupling coefficient falls in the range of 7.1% to 10.6%.

7. The BAW resonator of claim 1 wherein the first electromechanical coupling coefficient falls in the range of 6.5% to 7.3% and the second electromechanical coupling coefficient falls in the range of 8.2% to 10.6%.

8. The BAW resonator of claim 1 wherein the first piezoelectric layer comprises a first material that is not doped and the second piezoelectric layer comprises the first material that is doped.

9. The BAW resonator of claim 1 wherein the first piezoelectric layer comprises a first material that is doped at a first level and the second piezoelectric layer comprises the first material that is doped at a second level that is different than the first level.

10. The BAW resonator of claim 1 wherein the first piezoelectric layer and the second piezoelectric layer have a same crystallographic orientation.

11. The BAW resonator of claim 1 wherein the first piezoelectric layer resides on the bottom electrode, the second piezoelectric layer resides on the first piezoelectric layer, and the first electromechanical coupling coefficient is greater than the second electromechanical coupling coefficient.

12. The BAW resonator of claim 11 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 2%.

13. The BAW resonator of claim 11 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 5%.

14. The BAW resonator of claim 11 wherein the second electromechanical coupling coefficient is 6.5% and the first electromechanical coupling coefficient falls in the range of 7.1% to 10.6%.

15. The BAW resonator of claim 1 wherein the first piezoelectric layer resides on the bottom electrode, the second piezoelectric layer resides on the first piezoelectric layer, and the first electromechanical coupling coefficient is less than the second electromechanical coupling coefficient.

16. The BAW resonator of claim 15 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 2%.

17. The BAW resonator of claim 15 wherein the first electromechanical coupling coefficient differs from the second electromechanical coupling coefficient by at least 5%.

18. The BAW resonator of claim 15 wherein the first electromechanical coupling coefficient is 6.5% and the second electromechanical coupling coefficient falls in the range of 7.1% to 10.6%.

19. The BAW resonator of claim 1 wherein the first piezoelectric layer consists of aluminum nitride and the second piezoelectric layer consists of aluminum nitride doped with a transition metal.

20. The BAW resonator of claim 19 wherein the transition metal is scandium.

21. The BAW resonator of claim 1 wherein the first piezoelectric layer comprises aluminum nitride and the second piezoelectric layer comprises aluminum nitride doped with a transition metal.

22. The BAW resonator of claim 21 wherein the transition metal is scandium.

23. The BAW resonator of claim 1 wherein the reflector comprises a stack of reflector layers with alternating material compositions.

24. A filter comprising a first bulk acoustic wave (BAW) resonator electrically coupled to a second BAW resonator wherein:
the first BAW resonator comprises:
a first bottom electrode;
a first top electrode over the first bottom electrode;
a first multilayer piezoelectric structure between the first bottom electrode and the first top electrode and comprising a first piezoelectric layer having a first electromechanical coupling coefficient and a second piezoelectric layer having a second electromechanical coupling coefficient that is different than the first electromechanical coupling coefficient;
a first reflector below the first bottom electrode; and
a first supplemental reflector that is on the first reflector and provided directly on a lateral side of the first bottom electrode; and

the second BAW resonator comprises:
a second bottom electrode;
a second top electrode over the second bottom electrode;
a second multilayer piezoelectric structure between the second bottom electrode and the second top electrode and comprising a third piezoelectric layer having a third electromechanical coupling coefficient and a fourth piezoelectric layer having a fourth electromechanical coupling coefficient that is different than the third electromechanical coupling coefficient;
a second reflector below the second bottom electrode; and
a second supplemental reflector that is on the second reflector and provided directly on a lateral side of the second bottom electrode.

25. The filter of claim 24 wherein a ratio of a thickness of the first piezoelectric layer to a thickness of the second piezoelectric layer is different than a ratio of a thickness of the third piezoelectric layer to a thickness of the fourth piezoelectric layer.

Assignees

• Qorvo Us Inc

Inventors

• Sadhu Jyothi Swaroop
• Wang Maria

Classifications

• H03H9/175

  Acoustic mirrors · CPC title

• H03H9/564

  implemented with thin-film techniques · CPC title

• H03H9/205

  having multiple resonators (crystal tuning forks H03H9/21) · CPC title

• H03H9/589

  Acoustic mirrors · CPC title

• H03H9/568 Primary

  consisting of a ladder configuration · CPC title