Metal plate for deposition mask, and deposition mask and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-10727409-B2
Application number	US-201716332910-A
Country	US
Kind code	B2
Filing date	Aug 22, 2017
Priority date	Sep 13, 2016
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

First claim

The invention claimed is:

1. A deposition mask including a metal plate used for manufacturing the deposition mask, the metal plate comprising:
a base metal plate;
a first surface layer disposed on a first surface of the base metal plate; and
a second surface layer disposed on a second surface facing the first surface of the base metal plate,
wherein the first surface layer and the second surface layer include elements different from that of the base metal plate or composition ratios different from that of the base metal plate,
wherein the base metal plate includes invar,
wherein the base metal plate for the deposition mask includes a deposition pattern region and a non-deposition region, and the deposition pattern region includes a plurality of through-holes, and
the deposition pattern region is divided into an effective region, an outer region, and an ineffective region, and a through-hole is formed in the effective region and the outer region,
a shape of the through-hole of the outer region is different from a shape of the through-hole of the effective region.

2. The deposition mask of claim 1 , wherein a thickness of the metal plate is 5 to 50 μm.

3. The deposition mask of claim 1 , wherein a thickness of the base metal plate is 15 to 30 μm.

4. The deposition mask of claim 1 , wherein a thickness of the first surface layer is more than 5 nm and 850 nm or less, and
a thickness of the second surface layer is more than 30 nm and less than 500 nm.

5. The deposition mask of claim 1 , wherein an arithmetic mean roughness (Ra) of the base metal plate measured at an interface between the base metal plate and at least one surface layer of the first surface layer and the second surface layer is more than 50 nm, and a ten-point mean roughness (Rz) is more than 800 nm.

6. The deposition mask of claim 1 , wherein the first surface layer and the second surface layer include at least one metal of Ni, Cr, Fe, Ti, Mn, O, Mo, Ag, Zn, N, Al and alloys thereof.

7. The deposition mask of claim 6 , wherein a ratio of Cr of the first surface layer and the second surface layer is 0.01 wt % to 24 wt %.

8. The deposition mask of claim 1 , wherein the first surface layer and the second surface layer include at least two or more of Ni, Cr, Mo, Mn, Ti, Co, Cu, Fe, Au, Al, Mg, O, Ca, Cr, Si, Ti, Ag, Nb, V, In, and Sb.

9. The deposition mask of claim 1 , wherein an etch rate of the base metal plate is greater than those of the first surface layer and the second surface layer.

10. The deposition mask of claim 1 , wherein the first surface layer and the second surface layer include different elements not included in the base metal plate.

11. The deposition mask of claim 6 , wherein the first surface layer and the second surface layer each is an alloy layer including 0.5 to 10 wt % Ti.

12. The deposition mask of claim 1 , wherein the base metal plate includes a central region including a plurality of through-holes and an outer region positioned at an outer boundary of the central region,
wherein a thickness of the first surface layer disposed at the central region correspond to a thickness of the first surface layer disposed at the outer region, and a thickness of the second surface layer disposed at the central region may correspond to a thickness of the second surface layer disposed at the outer region.

13. The deposition mask of claim 1 , comprising
a first surface hole and a second surface hole passing through the base metal plate, the first surface layer, and the second surface layer, and communicating with each other.

14. The deposition mask of claim 1 , wherein the shape of the through-hole at a corner portion of the outer region is different from the shape of the through-hole of the effective region.

15. The deposition mask of claim 1 , wherein the deposition mask includes a bridge region between through-holes, and the first surface layer and the second surface layer are disposed on the bridge region.

16. The deposition mask of claim 1 , wherein the ineffective region includes a half etching portion.

Assignees

• Lg Innotek Co Ltd

Inventors

• Seong Dong Mug
• Yun Jong Min
• Cho Su Hyeon
• Kim Hae Sik
• Han Tae Hoon
• Son Hyo Won
• Lee Sang Yu
• Lee Sang Beum

Classifications

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P14/6328

  Deposition from the gas or vapour phase · CPC title

• H10P14/61

  using masks · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title