Display device and active array switch substrate thereof

Patent metadata

Field	Value
Publication number	US-10727258-B2
Application number	US-201716082899-A
Country	US
Kind code	B2
Filing date	May 31, 2017
Priority date	May 12, 2017
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

This application provides a display device and an active array switch substrate thereof. The active array switch substrate includes: a substrate; active array switches, formed on the substrate, where the active array switch includes a source electrode; at least one solar structure, disposed on the source electrode, where the solar structure includes a solar cell; and a transparent electrode, covered on the solar cell. The solar cell includes an N-type layer, an I-type layer of a microcrystalline silicon structure, and a P-type layer sequentially stacked in a direction away from the source electrode.

First claim

What is claimed is:

1. An active array switch substrate, comprising:
a substrate;
active array switches, formed on the substrate, wherein the active array switch comprises a source electrode;
at least one solar structure, disposed on the source electrode, wherein the solar structure comprises a solar cell; and
a transparent electrode, covered on the solar cell, wherein the solar cell comprises an N-type layer, an I-type layer of a microcrystalline silicon structure, and a P-type layer sequentially stacked in a direction away from the source electrode;
wherein suitable spacing enables the transparent electrode to be partially exposed without being totally covered by the solar structure.

2. The active array switch substrate according to claim 1 , wherein the I-type layer of the microcrystalline silicon structure is manufactured by performing plasma enhanced chemical vapor deposition (PECVD) on silane (SiH 4 ) and hydrogen (H 2 ), wherein a mixed ratio of the H 2 to the SiH 4 is in a range of 40 to 200.

3. The active array switch substrate according to claim 1 , wherein a material of the transparent electrode is one selected from zinc oxide (ZnO), stannic oxide (SnO 2 ), indium tin oxide (ITO), and indium oxide (In 2 O 3 ).

4. The active array switch substrate according to claim 1 , wherein the I-type layer of the microcrystalline silicon structure is a main area for optical-to-electrical conversion.

5. An active array switch substrate, comprising:
a substrate;
active array switches, formed on the substrate, wherein the active array switch comprises a source electrode;
a first solar structure, disposed on the source electrode, wherein the first solar structure comprises a first solar cell;
a second solar structure, disposed on the first solar structure, wherein the second solar structure comprises a second solar cell; and
a transparent electrode, covered on the second solar cell, wherein the first solar cell comprises an N-type layer, an I-type layer of a microcrystalline silicon structure, and a P-type layer sequentially stacked in a direction away from the source electrode, and the second solar cell comprises an N-type layer, an I-type layer of an amorphous silicon (a-Si) structure, and a P-type layer sequentially stacked in a direction away from the source electrode;
wherein suitable spacing enables the transparent electrode to be partially exposed without being totally covered by the second solar structure.

6. The active array switch substrate according to claim 5 , wherein the I-type layer of the microcrystalline silicon structure is manufactured by performing PECVD on SiH 4 and H 2 , and a mixed ratio of the H 2 to the SiH 4 is in a range of 40 to 200.

7. The active array switch substrate according to claim 5 , wherein a material of the transparent electrode is one selected from ZnO, SnO 2 , ITO, and In 2 O 3 .

8. The active array switch substrate according to claim 5 , wherein the I-type layer of the microcrystalline silicon structure and the I-type layer of the a-Si structure are main areas for optical-to-electrical conversion.

9. A display device, comprising:
a display panel;
at least one tandem solar structure, disposed on a periphery of the display panel, and configured to absorb and convert a ray of light to electric energy for the display device; and
active array switches, disposed on one side of the display panel, and configured to control an image-display function of the display panel;
wherein the tandem solar structure comprises:
a transparent substrate;

a plurality of transparent electrodes, disposed on the transparent substrate at equal spacing;
a plurality of solar structures, respectively deposited on the corresponding transparent electrodes at suitable spacing, to define each transparent electrode and a corresponding solar structure as a solar cell unit; and
a plurality of metal electrodes, respectively formed on the corresponding solar structures, wherein
the solar structure comprises a first solar cell and a second solar cell, wherein the suitable spacing enables the transparent electrode to be partially exposed without being totally covered by the solar structure.

10. The display device according to claim 9 , wherein a material of the transparent electrode is one selected from ZnO, SnO 2 , ITO, and In 2 O 3 .

11. The display device according to claim 9 , wherein a material of the metal electrode is one selected from aluminum (Al), silver (Ag), molybdenum (Mo), copper (Cu), titanium (Ti), and an alloy thereof.

12. The display device according to claim 9 , wherein the I-type layer of the microcrystalline silicon structure and the I-type layer of the a-Si structure are main areas for optical-to-electrical conversion.

Assignees

• Hkc Corp Ltd
• Chongqing Hkc Optoelectronics Tech Co Ltd

Inventors

• Chen Yu-Jen

Classifications

• H10F77/1645

  including microcrystalline silicon · CPC title

• H10F55/10

  wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices · CPC title

• H10F77/251

  comprising zinc oxide [ZnO] · CPC title

• H10F77/247

  comprising indium tin oxide [ITO] · CPC title

• H10F10/17

  Photovoltaic cells having only PIN junction potential barriers · CPC title