Method of processing a substrate

Patent metadata

Field	Value
Publication number	US-10727127-B2
Application number	US-201815872615-A
Country	US
Kind code	B2
Filing date	Jan 16, 2018
Priority date	Jan 17, 2017
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

A method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface, includes applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of modified regions in the substrate, each modified region extending at least from the first surface towards the second surface. Each modified region is formed by melting substrate material by means of the pulsed laser beam and allowing the molten substrate material to resolidify. The method further comprises removing substrate material along the at least one division line where the plurality of modified regions has been formed.

First claim

The invention claimed is:

1. A method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface, the method comprising:
applying a pulsed laser beam to the substrate from the side of the first surface, the pulsed laser beam having a wavelength such that it is absorbed by the substrate, the pulsed laser beam being applied at least in a plurality of positions along the at least one division line, so as to form a plurality of modified regions in the substrate, each modified region extending at least from the first surface towards the second surface, such that each modified region is present in the first surface, wherein each modified region is formed by melting substrate material by means of the pulsed laser beam and allowing the molten substrate material to resolidify; and
removing substrate material along the at least one division line where the plurality of modified regions has been formed.

2. The method according to claim 1 , wherein each modified region is formed by melting substrate material by means of the pulsed laser beam and allowing the molten substrate material to resolidify, without forming any openings open to the first surface or the second surface.

3. The method according to claim 1 , wherein the pulsed laser beam is applied to the substrate in a condition where a focal point of the pulsed laser beam is located on the first surface or at a distance from the first surface in the direction opposite to the direction from the first surface towards the second surface.

4. The method according to claim 1 , wherein the pulsed laser beam is applied to the substrate in a condition where a focal point of the pulsed laser beam is located on the first surface r at a distance from the first surface in the direction from the first surface towards the second surface.

5. The method according to claim 1 , wherein the substrate is a single crystal substrate or a compound substrate or a polycrystalline substrate.

6. The method according to claim 1 , wherein the modified regions comprise amorphous regions, or the modified regions are amorphous regions.

7. The method according to claim 1 , wherein the substrate material is removed by cutting the substrate along the at least one division line where the plurality of modified regions has been formed.

8. The method according to claim 1 , wherein the substrate material is mechanically removed along the at least one division line where the plurality of modified regions has been formed, in particular, by mechanically cutting the substrate along the at least one division line where the plurality of modified regions has been formed.

9. The method according to claim 1 , further comprising grinding the second surface of the substrate to adjust the substrate thickness.

10. The method according to claim 9 , wherein grinding the second surface of the substrate is performed after removing the substrate material along the at least one division line where the plurality of modified regions has been formed.

11. The method according to claim 10 , wherein
the substrate material is removed along only a part of the thickness, in the direction from the first surface towards the second surface, of the substrate, and
grinding the second surface of the substrate is performed along a remaining part of the thickness of the substrate, in which no substrate material has been removed, so as to divide the substrate along the at least one division line.

12. The method according to claim 1 , wherein the modified regions are formed so as to extend along only a part of the thickness, in the direction from the first surface towards the second surface, of the substrate, or so as to extend along the entire thickness, in the direction from the first surface towards the second surface, of the substrate.

13. The method according to claim 1 , wherein the substrate material is removed along the entire extension, in the direction from the first surface towards the second surface, of the modified regions.

14. The method according to claim 1 , wherein
the at least one division line has a width in a direction substantially perpendicular to the extension direction of the at least one division line, and
the method further comprises applying the pulsed laser beam also in a plurality of positions along the width direction of the at least one division line, so as to form within the width of the division line a plurality of rows of modified regions, each row extending along the extension direction of the at least one division line, wherein the rows are arranged adjacent to each other in the width direction of the at least one division line.

15. The method according to claim 1 , wherein
the at least one division line has a width in a direction substantially perpendicular to the extension direction of the at least one division line, and
a single row of modified regions is formed within the width of the at least one division line, the row extending along the extension direction of the at least one division line.

16. The method according to claim 15 , wherein
the substrate material is removed along the at least one division line where the plurality of modified regions has been formed by mechanically cutting the substrate, using a cutting means, and
a width, in the direction substantially perpendicular to the extension direction of the at least one division line, of an area of the substrate, in which the row or rows of modified regions has or have been formed, is in a range of approximately 90% to 110% of a width, in the direction substantially perpendicular to the extension direction of the at least one division line, of the cutting means.

17. The method according to claim 16 , wherein a row or rows of modified regions arranged closer to the centre of the at least one division line, in the width direction of the at least one division line, is or are formed with a pulsed laser beam having a higher power than a pulsed laser beam used for forming a row or rows of modified regions arranged further away from the centre of the at least one division line, in the width direction of the at least one division line.

Assignees

• Disco Corp

Inventors

• Morikazu Hiroshi
• Priewasser Karl Heinz
• Hattori Nao

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P34/42 Primary

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• B23K26/38

  by boring or cutting · CPC title