Electronic device, method of manufacturing the electronic device, and method of driving the electronic device
US-9221672-B2 · Dec 29, 2015 · US
US10727016B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10727016-B2 |
| Application number | US-201716083583-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 10, 2017 |
| Priority date | Mar 11, 2016 |
| Publication date | Jul 28, 2020 |
| Grant date | Jul 28, 2020 |
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A electromechanical relay device (100) comprising a source electrode (102), a beam (104) mounted on the source electrode at a first end and electrically coupled to the source electrode; a first drain electrode (112) located adjacent a second end of the beam, wherein a first contact (110) on the beam is arranged to be separated from a second contact (112) on the first drain electrode when the relay device is in a first condition; a first gate electrode (106 arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition; and wherein the first and second contacts are each coated with a layer of nanocrystalline graphite.
Opening claim text (preview).
What is claimed is: 1. An electromechanical relay device comprising: a source electrode; a beam electrically coupled to the source electrode; a first drain electrode located adjacent a first contact on the beam, wherein the first contact is arranged to be separated from a second contact on the first drain electrode when the relay device is in a first condition; a first gate electrode arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition; a second gate electrode; and a second drain electrode, wherein the first and second contacts are each coated with a layer of nanocrystalline graphite, wherein the first gate electrode is located along one side of the beam and the second gate electrode is located along an opposing side of the beam, wherein the beam has a forked section comprising a first and a second branch, wherein one or more auxiliary gate electrodes are located between the first and second branches, such that the beam is arranged to be separated from the first and second drain electrodes when the device is in a first state, wherein the first gate electrode and an auxiliary gate electrode are arranged to impart an electrostatic force on the beam to deflect the beam to electrically couple the first branch and the first drain electrode when the device is in the second state, and wherein the second gate electrode and an auxiliary gate electrode are arranged to impart an electrostatic force on the beam to deflect the beam to electrically couple the second branch and the second drain electrode when the device is in the third state. 2. An electromechanical relay device according to claim 1 , wherein a majority of a total surface area of the electromechanical relay device is coated with a layer of nanocrystalline graphite. 3. An electromechanical relay device according to claim 1 , further comprising a conductive layer provided underneath the nanocrystalline graphite layer. 4. An electromechanical relay device according to claim 1 , wherein the beam and the source electrode are integrally formed as a single unit. 5. An electromechanical relay device according to claim 1 , further comprising one or more auxiliary gate electrodes located between the branches of the beam. 6. An electromechanical relay device according to claim 1 , wherein the beam comprises a hinge located between the forked section and the source electrode. 7. An electromechanical relay device according to claim 1 , wherein the electromechanical relay device is a nanoelectromechanical relay device. 8. A micro or nano electromechanical relay device comprising: a source electrode; a beam electrically coupled to the source electrode; a first drain electrode located adjacent a first contact on the beam, wherein the first contact is arranged to be separated from a second contact on the first drain electrode when the relay device is in a first condition; and a first gate electrode arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition, wherein the first and second contacts are each coated with a layer of nanocrystalline graphite which is at least 10 nanometers in thickness. 9. A method for producing an electromechanical relay device according to claim 1 , the method comprising: providing a silicon wafer, having a device silicon layer and an underlying silicon dioxide layer; patterning the device silicon layer using lithography to form a beam; releasing the beam by etching the underlying silicon dioxide layer and critical point drying; and blanket depositing a layer of nanocrystalline graphite onto the device silicon layer by plasma-enhanced chemical vapour deposition. 10. A method according to claim 9 , further comprising depositing a conductive layer onto the device silicon prior to deposition of the nanocrystalline graphite. 11. A micro or nano electromechanical relay device according to claim 8 , wherein a majority of a total surface area of the electromechanical relay device is coated with a layer of nanocrystalline graphite. 12. A micro or nano electromechanical relay device according to claim 8 , further comprising a conductive layer provided underneath the nanocrystalline graphite layer. 13. A micro or nano electromechanical relay device according to claim 8 , wherein the beam and the source electrode are integrally formed as a single unit. 14. A micro or nano electromechanical relay device according to claim 8 , further comprising a second gate electrode and a second drain electrode, wherein the first gate electrode is located along one side of the beam and the second gate electrode is located along an opposing side of the beam; and wherein the beam has a forked section comprising a first and a second branch; and one or more auxiliary gate electrodes are located between the first and second branches, such that the beam is arranged to be separated from the first and second drain electrodes when the device is in a first state; the first gate electrode and an auxiliary gate electrode are arranged to impart an electrostatic force on the beam to deflect the beam to electrically couple the first branch and the first drain electrode when the device is in the second state; and the second gate electrode and an auxiliary gate electrode are arranged to impart an electrostatic force on the beam to deflect the beam to electrically couple the second branch and the second drain electrode when the device is in the third state. 15. A micro or nano electromechanical relay device according to claim 14 , further comprising one or more auxiliary gate electrodes located between the branches of the beam. 16. A micro or nano electromechanical relay device according to claim 14 , wherein the beam comprises a hinge located between the forked section and the source electrode. 17. A micro or nano electromechanical relay device according to claim 8 , wherein each layer of nanocrystalline graphite is no more than 80 nanometers in thickness.
with parallel movement of the movable contact relative to the substrate · CPC title
Layer thickness · CPC title
characterized by their profile · CPC title
the contact materials containing refractory materials, e.g. tungsten · CPC title
making use of micromechanics · CPC title
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