Semiconductive shield free of weld lines and protrusions

Patent metadata

Field	Value
Publication number	US-10726976-B2
Application number	US-201616313352-A
Country	US
Kind code	B2
Filing date	Jun 30, 2016
Priority date	Jun 30, 2016
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

Semiconductive shield layers for power cable constructions are made from a composition that has: (A) A nonpolar, ethylene-based polymer having a density of greater than (>) 0.90 glee and a melt index of >20 g/10 min at 190° C./2.16 Kg; (B) A polar polymer consisting of ethylene and an unsaturated alkyl ester having 4 to 20 carbon atoms; (C) Acetylene carbon black; and (D) A curing agent; with the provisos that (1) the composition has a phase separated structure, and (2) the weight ratio of nonpolar polymer to polar polymer is from 0.25 to 4.

First claim

The invention claimed is:

1. A composition comprising:
(A) from 40-90 wt % of a single non-polar ethylene-based polymer, the single non-polar ethylene-based polymer is a linear ethylene-based polymer having a density of greater than (>) 0.90 g/cc and a melt index of >20 g/10 min at 190° C./2.16 Kg;
(B) from 1-60 wt % of a polar polymer consisting of ethylene and an unsaturated alkyl ester having 4 to 20 carbon atoms;
(C) from 30-38 wt % of acetylene carbon black; and
(D) from 0.1-2.0 wt % of a curing agent;
with the provisos that (1) the composition has a phase separated structure, and (2) the weight ratio of nonpolar polymer to polar polymer is from 0.25 to 4.

2. The composition of claim 1 in which the ethylene-based polymer has at least one of (i) a melting point greater than or equal to (≥) 90° C., and (ii) a crystallinity ≥30%.

3. The composition of claim 1 in which the ethylene-based polymer comprises an alpha-olefin of 3 to 12 carbon atoms and, optionally, a diene.

4. The composition of claim 3 in which the ethylene-based polymer comprises less than (<) 25 wt % of mer units derived from the alpha-olefin.

5. The composition of claim 1 in which the polar polymer is at least one of ethylene-ethyl acrylate (EEA), ethylene-butyl acrylate (EBA), or ethylene-maleic anhydride (EMA).

6. The composition of claim 1 in which the phase separated structure is a double percolation phase structure.

7. A semiconductive shield layer made from the composition of claim 1 .

8. A cable comprising the semiconductive shield layer of claim 7 .

9. The composition of claim 1 wherein the composition has an apparent viscosity at 10 radians per second (rad/s) of less than 3000 milliPascal-seconds (mPa-s).

10. The composition of claim 1 wherein the weight ratio of the nonpolar, linear ethylene-based polymer to polar polymer is 60:40.

11. The composition of claim 1 wherein the weight ratio of the nonpolar, linear ethylene-based polymer to polar polymer is 53:47.

12. The composition of claim 1 wherein the weight ratio of the nonpolar, linear ethylene-based polymer to polar polymer is 55:45.

13. The composition of claim 1 wherein the weight ratio of the nonpolar, linear ethylene-based polymer to polar polymer is 50:50.

14. The composition of claim 1 wherein the weight ratio of the nonpolar, linear ethylene-based polymer to polar polymer is 45:55.

15. The composition of claim 1 wherein the weight ratio of the nonpolar, linear ethylene-based polymer to polar polymer is 40:60.

Assignees

• Dow Global Technologies Llc

Inventors

• Song Xiaomei
• Chen Hongyu
• Sun Yabin
• Wu Youjun
• Li Wei
• Miao Xiaoxiong

Classifications

• C08L23/04 Primary

  Homopolymers or copolymers of ethene · CPC title

• C08K3/04

  Carbon · CPC title

• C08L23/0815

  with aliphatic 1-olefins containing one carbon-to-carbon double bond · CPC title

• H01B9/027 Primary

  composed of semi-conducting layers · CPC title

• H01B1/24

  the conductive material comprising carbon-silicon compounds, carbon or silicon · CPC title