Device of manufacturing silicon carbide single crystal

Patent metadata

Field	Value
Publication number	US-10724151-B2
Application number	US-201514834539-A
Country	US
Kind code	B2
Filing date	Aug 25, 2015
Priority date	Oct 31, 2014
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

A device of manufacturing a silicon carbide single crystal includes a crucible, a first resistive heater, a second resistive heater, and a first support portion. The crucible has a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface. The first resistive heater is disposed to face the bottom surface. The second resistive heater is provided to surround the side surface. The first support portion supports the crucible such that the bottom surface is separated from the first resistive heater, and the side surface is separated from the second resistive heater. The first support portion is in contact with at least one of the top surface and the side surface.

First claim

What is claimed is:

1. A device of manufacturing a silicon carbide single crystal, comprising:
a crucible having a top surface, a bottom surface opposite to said top surface, and a tubular side surface located between said top surface and said bottom surface;
a first resistive heater disposed to face said bottom surface;
a second resistive heater provided to surround said side surface, said second resistive heater is separate and distinct from said first resistive heater;
a support portion that supports said crucible such that said bottom surface is separated from said first resistive heater, said side surface is separated from said second resistive heater, and said second resistive heater is disposed between said support portion and said side surface; and
a heat insulator accommodating said crucible, the first resistive heater, and the second resistive heater,
wherein said crucible has a pedestal being capable of holding a seed crystal and an accommodation portion being capable of accommodating a silicon carbide source material,
wherein said support portion is in contact with the pedestal,
wherein said support portion being disposed between the second resistive heater and the heat insulator, and
wherein said support portion being disposed between said crucible and the heat insulator, said support portion being in contact with at least one of said top surface and said side surface, and said support portion being separated from said bottom surface.

2. The device of manufacturing a silicon carbide single crystal according to claim 1 , wherein
said second resistive heater has a first surface facing said top surface, and a second surface facing said bottom surface, in a direction from said top surface toward said bottom surface, and
said support portion is disposed to be in contact with said side surface and to face said first surface.

3. The device of manufacturing a silicon carbide single crystal according to claim 2 , wherein
said second surface is located between said bottom surface and said top surface in said direction from said top surface toward said bottom surface.

4. The device of manufacturing a silicon carbide single crystal according to claim 1 , wherein
said second resistive heater has a first surface located on the side close to said top surface, and a second surface located on the side close to said bottom surface, in a direction from said top surface toward said bottom surface, and
said support portion is provided to be in contact with said side surface and to face said second surface.

5. The device of manufacturing a silicon carbide single crystal according to claim 1 , wherein
said support portion is in contact with an entire circumference of said side surface.

6. The device of manufacturing a silicon carbide single crystal according to claim 1 , wherein
said support portion is in contact with said top surface.

7. The device of manufacturing a silicon carbide single crystal according to claim 1 , wherein
when viewed along a direction parallel to said bottom surface, a width of said first resistive heater is greater than a width of internal space of said crucible.

8. The device of manufacturing a silicon carbide single crystal according to claim 1 , further comprising:
a third resistive heater disposed to face said top surface and to be separated from said top surface, said third resistive heater is separate and distinct from said first resistive heater and said second resistive heater.

9. The device of manufacturing a silicon carbide single crystal according to claim 1 , wherein
said silicon carbide single crystal is configured such that it can be manufactured with a sublimation method.

10. The device of manufacturing a silicon carbide single crystal according to claim 1 , further comprising:
a third resistive heater disposed to face said top surface, said third resistive heater is separate and distinct from said first resistive heater and said second resistive heater; and
a power supply connected to said first resistive heater, said second resistive heater and said third resistive heater, wherein
assuming that a temperature of said top surface is Ta, a temperature of said bottom surface is Tb, and a temperature of said side surface is Tc, said power supply provides power to said first resistive heater, said second resistive heater and said third resistive heater so as to satisfy 2100° C. Tc 2400° C. and Ta<Tb<Tc.

11. The device of manufacturing a silicon carbide single crystal according to claim 10 , further comprising:
a first pyrometer that measures the temperature of said top surface;
a second pyrometer that measures the temperature of said bottom surface; and
a third pyrometer that measures the temperature of said side surface.

12. The device of manufacturing a silicon carbide single crystal according to claim 11 , wherein
said second resistive heater is provided in a position overlapping with a measurement position of said third pyrometer in said tubular side surface in a direction from said top surface toward said bottom surface.

13. The device of manufacturing a silicon carbide single crystal according to claim 12 , wherein
said measurement position on said tubular side surface is located at a distance of 20 mm or more and 100 mm or less from said top surface in said direction from said top surface toward said bottom surface.

14. The device of manufacturing a silicon carbide single crystal according to claim 11 , said heat insulator having a through hole in a position corresponding to said third pyrometer.

Assignees

• Sumitomo Electric Industries

Inventors

• Hori Tsutomu
• Harada Shin

Classifications

• C30B23/063

  Heating of the substrate · CPC title

• C30B29/36

  Carbides · CPC title

• C30B23/066 Primary

  Heating of the material to be evaporated · CPC title