Quantum dot polymer composites and devices including the same

Patent metadata

Field	Value
Publication number	US-10723942-B2
Application number	US-201615387107-A
Country	US
Kind code	B2
Filing date	Dec 21, 2016
Priority date	Dec 23, 2015
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

First claim

What is claimed is:

1. A quantum dot-polymer composite, comprising:
a polymer matrix; and
a plurality of quantum dots dispersed in the polymer matrix,
wherein the quantum dot comprises a core comprising a first semiconductor material and a shell comprising a second semiconductor material disposed on the core,
wherein the quantum dot is cadmium-free,
wherein the shell has at least two branches and at least one valley portion connecting the at least two branches,
wherein the first semiconductor material is different from the second semiconductor material,
wherein the polymer matrix comprises a carboxylic acid group-containing binder having an acid value of greater than or equal to about 50 milligrams of potassium hydroxide (KOH) per gram of the binder and further comprises a radical polymerization product of a photopolymerizable acryl monomer, a radical polymerization product of the photopolymerizable acryl monomer and a reactive compound comprising at least two thiol groups and represented by Chemical Formula 2, or a combination thereof:

wherein, in Chemical Formula 2,
R 1 is selected from hydrogen; a substituted or unsubstituted C1 to C30 linear or branched alkyl group; a substituted or unsubstituted C6 to C30 aryl group; a substituted or unsubstituted C3 to C30 heteroaryl group; a substituted or unsubstituted C3 to C30 cycloalkyl group; a substituted or unsubstituted C3 to C30 heterocycloalkyl group; a C1 to C10 alkoxy group; a hydroxy group; —NH 2 ; a substituted or unsubstituted C1 to C30 amine group (—NRR′, wherein R and R′ are independently hydrogen or a C1 to C30 linear or branched alkyl group); an isocyanate group; a halogen; —ROR′ (wherein R is a substituted or unsubstituted C1 to C20 alkylene group and R′ is hydrogen or a C1 to C20 linear or branched alkyl group); acyl halide (—RC(═O)X, wherein R is a substituted or unsubstituted alkylene group and X is a halogen); —C(═O)OR′ (wherein R′ is hydrogen or a C1 to C20 linear or branched alkyl group); —CN; or —C(═O)ONRR′ (wherein R and R′ are independently hydrogen or a C1 to C20 linear or branched alkyl group),
L 1 is a carbon atom, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C6 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a substituted or unsubstituted C6 to C30 heteroarylene group, wherein at least one methylene (—CH 2 —) of the substituted or unsubstituted C1 to C30 alkylene group may be replaced by sulfonyl (—SO 2 —), carbonyl (—CO—), ether (—O—), sulfide (—S—), sulfoxide (—SO—), ester (—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 alkyl group) or a combination thereof,
Y 1 is a single bond; a substituted or unsubstituted C1 to C30 alkylene group; a substituted or unsubstituted C2 to C30 alkenylene group; a substituted C1 to C30 alkylene group or a C2 to C30 alkenylene group wherein at least one methylene (—CH 2 —) is replaced by sulfonyl (—S(═O) 2 —), carbonyl (—C(═O)—), ether (—O—), sulfide (—S—), sulfoxide (—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 linear or branched alkyl group), imine (—NR—) (wherein R is hydrogen or a C1 to C10 linear or branched alkyl group) or combination thereof,
m is an integer of 1 or more,
k1 is 0 or an integer of 1 or more, k2 is an integer of 1 or more, and
a sum of m and k2 is an integer of 3 or more,
provided that when Y 1 is not a single bond, m does not exceed the valence of Y 1 , and provided that a sum of k1 and k2 does not exceed the valence of L 1 .

2. The quantum dot-polymer composite of claim 1 , further comprising a light scatter selected from a metal oxide particle, a metal particle, and a combination thereof.

3. The quantum dot-polymer composite of claim 1 , wherein the quantum dot-polymer composite has a photo-conversion rate of greater than or equal to about 45%.

4. An electronic device comprising the quantum dot-polymer composite of claim 1 .

5. The quantum dot polymer composite of claim 1 , wherein the shell surrounds the whole surface of the core.

6. The quantum dot-polymer composite of claim 1 , wherein the shell has three or more branches.

7. The quantum dot-polymer composite of claim 1 , wherein the shell has at least two branches and at least one concave valley portion connecting the faces of the at least two branches.

8. The quantum dot polymer composite of claim 1 , wherein the shell has a thickness of greater than or equal to about 1.7 nanometers.

9. The quantum dot polymer composite of claim 1 , wherein the core and the shell have a same crystal structure at the interface therebetween.

10. The quantum dot polymer composite of claim 9 , wherein the same crystal structure of the core and the shell is a zinc blend structure or a wurtzeit structure.

11. The quantum dot polymer composite of claim 1 ,
wherein the first semiconductor material comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element or compound, a Group compound, or a combination thereof, and
wherein the second semiconductor material comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element or compound, a Group I-III-VI compound, a Group compound, a Group I-II-IV-VI compound, or a combination thereof.

12. The quantum dot polymer composite of claim 11 ,
wherein the Group II-VI compound for the first or second semiconductor nanocrystal is selected from a binary element compound selected from ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a combination thereof; a ternary element compound selected from ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and a combination thereof; and a quaternary element compound selected from HgZnTeS, HgZnSeS, HgZnSeTe, HgZnSTe, and a combination thereof,
wherein the Group III-V compound for the first or second semiconductor nanocrystal is selected from a binary element compound selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a combination thereof; a ternary element compound selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and a combination thereof; and a quaternary element compound selected from GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a combination thereof,
wherein the Group IV-VI compound for the first or second semiconductor nanocrystal is selected from a binary element compound selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a combination thereof; a ternary element compound selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a combination thereof; and a quaternary element compound selected from SnPbSSe, SnPbSeTe, SnPbSTe, and a combination thereof,
wherein the Group compound is selected from CuInSe 2 , CuInS 2 , CuInGaSe, CuInGaS, and a combination thereof,
wherein the Group compound for the first or second semiconductor nanocrystal is selected from ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe, and a combination thereof,
wherein the Group I-II-IV-VI compound is selected from CuZnSnSe, CuZnSnS, and a combination thereof, and
wherein the Group IV compound for the first or second semiconductor nanocrystal is selected from a single-el

Assignees

• Samsung Electronics Co Ltd
• Samsung Display Co Ltd
• Samsung Sdi Co Ltd

Inventors

• Jun Shin Ae
• Kim Taekhoon
• Park Garam
• Han Yong Seok
• Jang Eun Joo
• Jang Hyo Sook
• Jeong Tae Won
• Park Shang Hyeun

Classifications

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• G02F1/133617

  Illumination with ultraviolet light; Luminescent elements or materials associated to the cell · CPC title

• G02F2202/36

  Micro- or nanomaterials · CPC title

• C09K11/883

  with zinc or cadmium · CPC title

• C09K11/703

  with zinc or cadmium · CPC title