Positive resist film laminate and pattern forming process

US10719015B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10719015-B2
Application numberUS-201815950630-A
CountryUS
Kind codeB2
Filing dateApr 11, 2018
Priority dateApr 17, 2017
Publication dateJul 21, 2020
Grant dateJul 21, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.

First claim

Opening claim text (preview).

The invention claimed is: 1. A positive resist film laminate comprising a thermoplastic film as a first support and a novolak resin-naphthoquinone diazide (NQD) base positive resist film thereon, said novolak resin-NQD base positive resist film comprising (A) a novolak resin-NQD base resin composition, (B) a polyester, and (C) 3 to 30% by weight of an organic solvent, the novolak resin-NQD base resin composition (A) comprising (A-1) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, (A-2) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, and a novolak resin having unsubstituted phenolic hydroxyl groups, (A-3) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, and a 1,2-naphthoquinone diazidosulfonic acid ester, (A-4) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, a novolak resin having unsubstituted phenolic hydroxyl groups, and a 1,2-naphthoquinone diazidosulfonic acid ester, or (A-5) a novolak resin having unsubstituted phenolic hydroxyl groups and a 1,2-naphthoquinone diazidosulfonic acid ester, wherein the polyester (B) is a condensate of a polyfunctional carboxylic acid with a polyhydric alcohol or a condensate of a polyfunctional carboxylic anhydride with a polyhydric alcohol. 2. The laminate of claim 1 wherein the polyester (B) is a polyester based on a polyfunctional carboxylic acid having 2 to 6 carboxyl groups. 3. A pattern forming process comprising the steps of: (1) transferring the novolak resin-NQD base positive resist film of the laminate of claim 1 to a second support, (2) exposing the resist film to UV radiation, and (3) developing the resist film in an alkaline aqueous solution. 4. The process of claim 3 wherein the step (1) further includes pre-baking the resist film after the transfer. 5. The process of claim 3 wherein the step (2) further includes post-exposure baking. 6. The process of claim 3 , further comprising the step (4) of forming a metal plating layer on the second support by electroplating or electroless plating, subsequent to the step (3). 7. A positive resist film laminate comprising a thermoplastic film as a first support and a novolak resin-naphthoquinone diazide (NQD) base positive resist film thereon, said novolak resin-NQD base positive resist film comprising (A) a novolak resin-NQD base resin composition, (B) a polyester, and (C) 3 to 30% by weight of an organic solvent, the novolak resin-NQD base resin composition (A) comprising (A-1) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, (A-2) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, and a novolak resin having unsubstituted phenolic hydroxyl groups, (A-3) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, and a 1,2-naphthoquinone diazidosulfonic acid ester, (A-4) a novolak resin having phenolic hydroxyl groups wherein some or all hydrogen atoms of the phenolic hydroxyl groups are substituted by 1,2-naphthoquinone diazidosulfonyl groups, a novolak resin having unsubstituted phenolic hydroxyl groups, and a 1,2-naphthoquinone diazidosulfonic acid ester, or (A-5) a novolak resin having unsubstituted phenolic hydroxyl groups and a 1,2-naphthoquinone diazidosulfonic acid ester, wherein the polyester (B) is alkali soluble. 8. The laminate of claim 1 , further comprising (D) a surfactant.

Assignees

Inventors

Classifications

  • Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) · CPC title

  • G03F7/0392Primary

    the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

  • G03F7/0233Primary

    characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides · CPC title

  • Finishing the coated layer, e.g. drying, baking, soaking · CPC title

  • Treatment after imagewise removal, e.g. baking · CPC title

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What does patent US10719015B2 cover?
A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.
Who is the assignee on this patent?
Shinetsu Chemical Co
What technology area does this patent fall under?
Primary CPC classification G03F7/0392. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 21 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).