Ruthenium removal composition and method of producing magnetoresistive random access memory

Patent metadata

Field	Value
Publication number	US-10714682-B2
Application number	US-201916245570-A
Country	US
Kind code	B2
Filing date	Jan 11, 2019
Priority date	Oct 31, 2014
Publication date	Jul 14, 2020
Grant date	Jul 14, 2020

Abstract

An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.

First claim

What is claimed is:

1. A method of producing a magnetoresistive random access memory, the method comprising:
dry etching a semiconductor substrate, the semiconductor substrate including a ferromagnetic layer and a Ru-containing layer, the ferromagnetic layer including at least one of CoFeB or CoFe, and the Ru-containing layer including Ru; and
removing Ru-containing dry etching residues, using a ruthenium removal composition, without substantially dissolving the ferromagnetic layer,
wherein the ruthenium removal composition comprises orthoperiodic acid and water, a content of orthoperiodic acid in the ruthenium removal composition is from 0.1% to 3% by mass with respect to a total mass of the ruthenium removal composition, and the ruthenium removal composition has a pH of 11 or more.

2. The method according to claim 1 , wherein the semiconductor substrate further includes an insulator layer that includes MgO.

3. The method according to claim 1 , wherein a MgO dissolution rate of the ruthenium removal composition is 2 nm/min or less.

4. The method according to claim 1 , wherein the content of orthoperiodic acid in the ruthenium removal composition is from 0.5% to 3% by mass with respect to a total mass of the ruthenium removal composition.

5. The method according to claim 1 , wherein a content of water in the ruthenium removal composition is 30% by mass or more with respect to a total mass of the ruthenium removal composition.

6. The method according to claim 1 , wherein the ruthenium removal composition further comprises at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and monoethanolamine, as a pH adjusting agent.

7. The method according to claim 6 , wherein a content of the pH adjusting agent in the ruthenium removal composition is 0.01% to 5% by mass with respect to a total mass of the ruthenium removal composition.

8. The method according to claim 1 , wherein the removing of the Ru-containing dry etching residues is performed at 40° C. to 55° C.

9. A method of producing a magnetoresistive random access memory, the method comprising:
dry etching a semiconductor substrate, the semiconductor substrate including a ferromagnetic layer, a Ru-containing layer and an insulator layer, the ferromagnetic layer including at least one of CoFeB or CoFe, the Ru-containing layer including Ru, and the insulator layer including MgO; and
removing Ru-containing dry etching residues, using a ruthenium removal composition, without substantially dissolving the ferromagnetic layer,
wherein the ruthenium removal composition comprises orthoperiodic acid and water, and the ruthenium removal composition has a pH of 11 or more.

10. The method according to claim 9 , wherein a MgO dissolution rate of the ruthenium removal composition is 2 nm/min or less.

11. The method according to claim 9 , wherein a content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to a total mass of the ruthenium removal composition.

12. The method according to claim 9 , wherein a content of water in the ruthenium removal composition is 30% by mass or more with respect to a total mass of the ruthenium removal composition.

13. The method according to claim 9 , wherein the ruthenium removal composition further comprises at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and monoethanolamine, as a pH adjusting agent.

14. The method according to claim 13 , wherein a content of the pH adjusting agent in the ruthenium removal composition is 0.01% to 5% by mass with respect to a total mass of the ruthenium removal composition.

15. The method according to claim 9 , wherein the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 3% by mass with respect to a total mass of the ruthenium removal composition.

16. The method according to claim 9 , wherein a treatment temperature of the residue removal step is 40° C. to 55° C.

Assignees

• Fujifilm Corp

Inventors

• Park Keeyoung
• Mizutani Atsushi

Classifications

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10D84/80

  characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence) · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title