Apparatus and method for treating substrate

US10714352B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10714352-B2
Application numberUS-201715681347-A
CountryUS
Kind codeB2
Filing dateAug 19, 2017
Priority dateAug 31, 2016
Publication dateJul 14, 2020
Grant dateJul 14, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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Disclosed are an apparatus and a method for treating a substrate. The method includes repeatedly rotating the substrate alternately at a first speed and at a second speed while the treatment liquid is supplied, and the second speed is higher than the first speed.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for treating a substrate by supplying a treatment liquid onto the substrate during an etching process, the method consists of: repeatedly rotating the substrate alternately at a first speed and at a second speed while the treatment liquid is supplied, wherein the second speed is higher than the first speed, wherein the supply of the treatment liquid is initiated when the substrate rotates at the second speed, wherein the treatment liquid is a chemical for etching a film coated on the substrate, wherein a rotational acceleration of the substrate is changed while the rotational speed of the substrate is changed between the first speed and the second speed, and wherein a foregoing portion of the rotational acceleration is larger than a subsequent portion of the rotational acceleration during the change of the rotational acceleration. 2. The method of claim 1 , wherein the rotational speed of the substrate is changed between the first speed and the second speed two times or more. 3. The method of claim 1 , wherein the first speed is 100 rpm or lower and the second speed is 1000 rpm or higher. 4. The method of claim 3 , wherein the second speed is higher than 1000 rpm. 5. The method of claim 1 , wherein the first speed is 0 rpm. 6. The method of claim 1 , wherein the treatment liquid includes thinner. 7. The method of claim 1 , wherein a time period for which the treatment liquid is supplied is 100 seconds or less. 8. A method for treating a substrate, the method comprising: a first coating process of forming a first coating layer by supplying a first coating liquid onto the substrate having a pattern, in a first chamber; an etching process of removing the first coating layer located on an upper surface of the pattern such that the upper surface of the pattern is exposed, by supplying a chemical onto the substrate; and a second coating process of forming a second coating layer by supplying a second coating liquid onto the substrate having a pattern, in a second chamber, wherein the first coating process, the etching process, and the second coating process are sequentially performed, wherein the etching process consists of: repeatedly rotating the substrate alternately at a first speed and at a second speed while the treatment liquid is supplied, wherein the second speed is higher than the first speed, wherein the supply of the chemical is initiated when the substrate rotates at the second speed, wherein a rotational acceleration of the substrate is changed while the rotational speed of the substrate is changed between the first speed and the second speed, and wherein a foregoing portion of the rotational acceleration is larger than a subsequent portion of the rotational acceleration during the change of the rotational acceleration. 9. The method of claim 8 , wherein the rotational speed of the substrate is changed between the first speed and the second speed two times or more. 10. The method of claim 8 , wherein the first speed is 100 rpm or lower and the second speed is 1000 rpm or higher. 11. The method of claim 8 , wherein the chemical being provided for etching the first coating layer, and wherein the first speed is 100 rpm or lower and the second speed is higher than 1000 rpm. 12. The method of claim 8 , wherein the etching process is performed in one of the first chamber or the second chamber.

Assignees

Inventors

Classifications

  • H10P76/20Primary

    of masks comprising organic materials · CPC title

  • characterised by the construction of the shaft · CPC title

  • characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

  • characterised by lifting arrangements, e.g. lift pins · CPC title

  • Process monitoring, e.g. flow or thickness monitoring · CPC title

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Frequently asked questions

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What does patent US10714352B2 cover?
Disclosed are an apparatus and a method for treating a substrate. The method includes repeatedly rotating the substrate alternately at a first speed and at a second speed while the treatment liquid is supplied, and the second speed is higher than the first speed.
Who is the assignee on this patent?
Semes Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P76/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 14 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).