Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

Patent metadata

Field	Value
Publication number	US-10707410-B2
Application number	US-201816225670-A
Country	US
Kind code	B2
Filing date	Dec 19, 2018
Priority date	May 31, 2006
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

First claim

What is claimed is:

1. A method of fabricating a magnetoresistive magnetic tunnel junction (MTJ) stack, comprising:
forming a free magnetic region having at least one layer of one or more ferromagnetic materials;
forming a fixed magnetic region consisting essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure, wherein forming the fixed magnetic region includes:
forming a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt;
forming a second layer of one or more ferromagnetic materials;
forming an anti-ferromagnetic coupling layer between the first layer and the second layer; and
forming a third layer of one or more ferromagnetic materials between the first layer and the anti-ferromagnetic coupling layer; and

forming a dielectric layer between the free magnetic region and the fixed magnetic region.

2. The method of claim 1 , wherein the first layer includes an alloy having cobalt, iron, and boron, and the third layer includes an alloy having cobalt and iron.

3. The method of claim 2 , wherein the first layer includes an amorphous crystalline structure.

4. The method of claim 2 , wherein the second layer includes an alloy having cobalt, iron, and boron.

5. The method of claim 4 , wherein the second layer includes an alloy having a different boron concentration than the first layer.

6. The method of claim 1 , wherein forming the third layer includes forming the third layer on the first layer.

7. The method of claim 1 , wherein forming the first layer includes forming the first layer using a cobalt-boron alloy, and forming the second layer includes forming the second layer using a cobalt-boron alloy on the anti-ferromagnetic coupling layer.

8. The method of claim 7 , wherein the second layer includes an alloy having a different boron concentration than the first layer.

9. The method of claim 8 , wherein the first layer includes a cobalt-iron-boron alloy, and the second layer also includes a cobalt-iron-boron alloy.

10. The method of claim 1 , wherein the second layer a different thickness than the first layer.

11. A method of fabricating a magnetoresistive magnetic tunnel junction (MTJ) stack, comprising:
forming a free magnetic region having at least one layer of one or more ferromagnetic materials;
forming a fixed magnetic region consisting essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure, wherein forming the fixed magnetic region includes:
forming a first layer including a cobalt-iron-boron alloy;
forming a second layer including a cobalt-iron-boron alloy;
forming an anti-ferromagnetic coupling layer between the first layer and the second layer; and
forming a third layer including a cobalt-iron alloy between the first layer and the anti-ferromagnetic coupling layer; and

forming a dielectric layer between the free magnetic region and the fixed magnetic region.

12. The method of claim 11 , wherein the second layer includes a different boron concentration than the first layer.

13. The method of claim 11 , wherein the second layer includes a different thickness than the first layer.

14. The method of claim 11 , wherein forming the third layer includes forming the third layer on the first layer.

15. The method of claim 14 , wherein forming the anti-ferromagnetic coupling layer includes forming the anti-ferromagnetic coupling layer on the third layer.

16. The method of claim 11 , wherein the first layer includes an amorphous crystalline structure.

17. A method of fabricating a magnetoresistive magnetic tunnel junction (MTJ) stack, comprising:
forming a free magnetic region having at least one layer of one or more ferromagnetic materials;
forming a fixed magnetic region consisting essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure, wherein forming the fixed magnetic region includes:
forming a first layer including a cobalt-iron-boron alloy;
forming a second layer including a cobalt-iron-boron alloy, wherein the second layer includes at least one of (a) a different boron concentration than the first layer, or (b) a different thickness than the first layer;
forming an anti-ferromagnetic coupling layer between the first layer and the second layer; and
forming a third layer including a cobalt-iron alloy between the first layer and the anti-ferromagnetic coupling layer; and

forming a dielectric layer between the free magnetic region and the fixed magnetic region.

18. The method of claim 17 , wherein the first layer includes an amorphous crystalline structure.

19. The method of claim 17 , wherein forming the third layer includes forming the third layer on the first layer.

20. The method of claim 17 , wherein forming the anti-ferromagnetic coupling layer includes forming the anti-ferromagnetic coupling layer on the third layer.

Assignees

• Everspin Technologies Inc

Inventors

• Pietambaram Srinivas V
• Akerman Bengt J
• Whig Renu
• Janesky Jason A
• Rizzo Nicholas D
• Slaughter Jon M

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H10N50/80

  Constructional details · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title