Light emitting diode and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-10707381-B2
Application number	US-201916522634-A
Country	US
Kind code	B2
Filing date	Jul 25, 2019
Priority date	Mar 5, 2015
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

First claim

The invention claimed is:

1. A light-emitting diode (LED), comprising:
a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer;
an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein;
a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer;
a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and
a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

2. The LED of claim 1 , wherein a thickness of the transparent dielectric layer is larger than 50 nm.

3. The LED of claim 1 , wherein the first transparent adhesive layer is a transparent isolating adhesive layer covering one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer.

4. The LED of claim 1 , wherein a thickness of the first transparent adhesive layer is less than 20 nm.

5. The LED of claim 1 , wherein the second transparent adhesive layer is a transparent conductive adhesive layer.

6. The LED of claim 5 , wherein a thickness of the second transparent adhesive layer is less than 10 nm.

7. The LED of claim 5 , wherein a thickness of the first transparent adhesive layer is less than 1/10 of the thickness of the transparent dielectric layer.

8. The LED of claim 1 , wherein:
the transparent dielectric layer comprises a plurality of sub-layers; and
a thickness of the first transparent adhesive layer is less than ⅕ of a thickness of any sub-layer of the transparent dielectric layer.

9. The LED of claim 1 , wherein:
the transparent dielectric layer is an MgF layer;
the first transparent adhesive layer is a SiO layer;
the second transparent adhesive layer is a sputtered ITO layer; and
the metal reflective layer is an Ag reflector.

10. The LED of claim 1 , further comprising a diffusion blocking layer wrapping a surface and a side wall at a side of the metal reflective layer that is distal from the light-emitting epitaxial laminated layer.

11. The LED of claim 1 , wherein:
the conductive holes are filled with a metal ohmic contact layer;
the surface at the side that is distal from the epitaxial laminated layer is flush with the first transparent adhesive layer.

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• Meng Cheng
• Jia Yuehua
• Wang Jing
• Wu Chun-Yi
• Tao Ching-Shan
• Wang Duxiang

Classifications

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/034

  of coatings · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/831

  characterised by their shape · CPC title