Multijunction solar cells on bulk GeSi substrate

Patent metadata

Field	Value
Publication number	US-10707366-B2
Application number	US-201815938246-A
Country	US
Kind code	B2
Filing date	Mar 28, 2018
Priority date	Aug 17, 2015
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.

First claim

The invention claimed is:

1. A four-junction space-qualified solar cell assembly designed for operation at AMO and at a 1 MeV electron equivalent fluence of at least 1×10 14 e/cm 2 , the solar cell comprising subcells, wherein a combination of compositions and band gaps of the subcells is designed to maximize efficiency of the solar cell at a predetermined time, after initial deployment, when the solar cell is deployed in space at AMO and at an operational temperature in the range of 40 to 70 degrees Centigrade, the predetermined time being at least five years and referred to as the end-of-life (EOL), the solar cell comprising:
an upper first solar subcell composed of indium gallium aluminum phosphide and having a first band gap in the range of 2.0 to 2.2 eV;
a second solar subcell adjacent to said upper first solar subcell and including an emitter layer composed of indium gallium phosphide or aluminum indium gallium arsenide, and a base layer composed of aluminum indium gallium arsenide and having a second band gap in the range of approximately 1.55 to 1.8 eV and being lattice matched with the upper first solar subcell, wherein the emitter and base layers of the second solar subcell form a photoelectric junction;
a third solar subcell adjacent to said second solar subcell and composed of indium gallium arsenide and having a third band gap less than that of the second solar subcell and being lattice matched with the second solar subcell; and
a fourth solar subcell adjacent to said third solar subcell and composed of germanium silicon and has an indirect band gap in the range of 0.7 to 1.1 eV, or 0.85 to 1.05 eV;
wherein each of the upper first solar subcell, the second solar subcell and the third solar subcell is lattice-mismatched to the fourth solar subcell, and
wherein a numerical sum of the band gaps of the four solar subcells, divided by four, is equal to 1.35 eV.

2. The four junction solar cell assembly as defined in claim 1 , wherein the upper first solar subcell has a band gap of less than 2.15, the second solar subcell has a band gap of less than 1.73 eV; and the third solar subcell has a band gap in the range of 1.15 to 1.2 eV.

3. The four junction solar cell assembly as defined in claim 1 , the upper first solar subcell has a band gap of 2.05 eV.

4. The four junction solar cell assembly as defined in claim 1 , wherein the band gap of the third solar subcell is less than 1.41 eV, and greater than that of the fourth solar subcell.

5. The four junction solar cell assembly as defined in claim 1 , further comprising:
a distributed Bragg reflector (DBR) layer adjacent to and disposed between the third and the fourth solar subcells and arranged so that light can enter and pass through the third solar subcell and at least a portion of which can be reflected back into the third solar subcell by the DBR layer, and is composed of a plurality of alternating sublayers of lattice matched materials with discontinuities in their respective indices of refraction; and
wherein the difference in refractive indices between alternating sublayers is maximized in order to minimize the number of periods required to achieve a given reflectivity, and the thickness and refractive index of each period determines the stop band and its limiting wavelength.

6. The four junction solar cell assembly as defined in claim 5 , wherein the DBR layer includes a first DBR layer composed of a plurality of p type ln z Al x Ga 1-x-z As sublayers, and a second DBR layer disposed over and adjacent to the first DBR layer and composed of a plurality of p type ln w Al y Ga 1-y-w As sublayers, where 0<w<1, 0<x<1, 0<y<1, 0<z<1 and y is greater than x, thereby increasing the reflection bandwidth of the DBR layer.

7. The four junction solar cell assembly as defined in claim 1 , wherein the fourth solar subcell is lattice mismatched with respect to the third solar subcell, and has a band gap between 0.83 and 0.88 eV as measured at 300 degrees Kelvin, corresponding to a percentage of Si in the GeSi substrate ranging between 13.0 and 15.0 percent by mole fraction.

8. The four junction solar cell assembly as defined in claim 1 , wherein the top subcell is composed of a base layer of (ln x Ga 1-x ) 1-y Al y P where x is 0.505, and y is 0.142, corresponding to a band gap of2.10 eV, and an emitter layer of (ln x Ga 1-x ) 1-y Al y P where x is 0.505, and y is 0.107, corresponding to a band gap of 2.05 eV.

9. The four junction solar cell assembly as defined in claim 1 , further comprising a tunnel diode disposed over the fourth solar subcell, and intermediate layer disposed between the third solar subcell and the tunnel diode wherein the intermediate layer is compositionally graded to lattice match the third solar subcell on one side and the tunnel diode on the other side and is composed of any of the As, P, N, Sb based III-V compound semiconductors subject to the constraints of having the in-plane lattice parameter greater than or equal to that of the third solar subcell and different than that of the tunnel diode, and having a band gap energy greater than that of the fourth solar subcell.

10. The four junction solar cell assembly as defined in claim 1 , further comprising an intermediate layer disposed between the third solar subcell and the fourth solar subcell wherein the intermediate layer is compositionally step-graded with between one and four steps to lattice match the fourth solar subcell on one side and composed of ln x Ga 1-x As or (ln x Ga 1-x ) y Al 1-y As with 0<x<1, 0<y<1, and x and y selected such that the band gap is in the range of 1.15 to 1.41 eV throughout its thickness.

11. The four junction solar cell assembly as defined in claim 10 , wherein the intermediate layer has a graded band gap in the range of 1.15 to 1.41 eV, or 1.2 to 1.35 eV, or 1.25 to 1.30 eV.

12. The four junction solar cell assembly as defined in claim 1 , wherein either (i) the emitter layer; or (ii) the base layer and emitter layer, of the upper first subcell have different lattice constants from the lattice constant of the second subcell.

13. The four junction solar cell assembly as defined in claim 1 , further comprising:
a distributed Bragg reflector (DBR) layer adjacent to and beneath the third solar subcell and arranged so that light can enter and pass through the third solar subcell and at least a portion of which can be reflected back into the third solar subcell by the DBR layer, wherein the distributed Bragg reflector layer is composed of a plurality of alternating layers of lattice matched materials with discontinuities in their respective indices of refraction, wherein the difference in refractive indices between alternating layers is maximized in order to minimize the number of periods required to achieve a given reflectivity, and the thickness and refractive index of each period determines the stop band and its limiting wavelength, and wherein the DBR layer includes a first DBR layer composed of a plurality of p type ln z Al x Ga 1-x-z As layers, and a second DBR layer disposed over the first DBR layer and composed of a plurality ofp type ln w Al y Ga 1-y-w As layers, where O<w<1, 0<x<1, 0<y<1, 0<z<1 and y is greater than x; and
an intermediate layer disposed between the DBR layer and the fourth solar subcell, wherein the intermediate layer is compositionally step-graded to lattice match the DBR layer on one side and the fourth solar subcell on the other side, and is composed of any of the As, P, N, Sb based III-V compound semiconductors subject to the constraints ofhaving the in-plane lattice parameter greater than or equal to that of the DBR layer and less than or equal to that of the lower fourth solar subcell,

Assignees

• Solaero Tech Corp

Inventors

• Hart John
• Bittner Zachary
• Whipple Samantha
• Miller Nathaniel
• Derkacs Daniel
• Sharps Paul

Classifications

• H10D64/01356

  the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC (H10D64/01364, H10D64/01366 take precedence) · CPC title

• H10D10/891

  comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors · CPC title

• H10F77/1665

  including Group IV-IV materials, e.g. SiGe or SiC · CPC title

• H10F77/1648

  including microcrystalline Group IV-IV materials, e.g. microcrystalline SiGe · CPC title

• H10F77/1465

  including only Group IV materials, e.g. Si-SiGe superlattices · CPC title