MEMS triaxial magnetic sensor with improved configuration

Patent metadata

Field	Value
Publication number	US-10705158-B2
Application number	US-201916290778-A
Country	US
Kind code	B2
Filing date	Mar 1, 2019
Priority date	Dec 29, 2016
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

A MEMS triaxial magnetic sensor device includes a sensing structure having: a substrate; an outer frame, which internally defines a window and is elastically coupled to first anchorages fixed with respect to the substrate by first elastic elements; a mobile structure arranged in the window, suspended above the substrate, which is elastically coupled to the outer frame by second elastic elements and carries a conductive path for flow of an electric current; and an elastic arrangement operatively coupled to the mobile structure. The mobile structure performs, due to the first and second elastic elements and the arrangement of elastic elements, first, second, and third sensing movements in response to Lorentz forces from first, second, and third magnetic-field components, respectively. The first, second, and third sensing movements are distinct and decoupled from one another.

First claim

The invention claimed is:

1. A MEMS triaxial magnetic sensor device, comprising:
a sensing structure that includes:
a substrate;
first anchorages fixed with respect to said substrate;
first elastic elements;
an outer frame internally defining a window and elastically coupled to the first anchorages by the first elastic elements;
second elastic elements;
a mobile structure, arranged in the window suspended above said substrate, elastically coupled to said outer frame by the second elastic elements, and including an inner frame;
an electrode structure positioned within the inner frame; and
an elastic arrangement, within said window, coupling the electrode structure to the mobile structure, wherein:
the first elastic elements are configured to enable the mobile structure to rotate about a first axis of a first plane in response to Lorentz forces originating from a first magnetic-field component;
the second elastic elements are configured to enable the mobile structure to rotate about a second axis of the first plane in response to Lorentz forces originating from a second magnetic-field component, the second axis being transverse to the first axis; and
the elastic arrangement is configured to enable a translational movement of the electrode structure in the first plane in response to Lorentz forces originating from a third magnetic-field component.

2. The sensor device according to claim 1 , wherein said sensing structure is symmetric about the first axis and symmetric about the second axis, wherein said outer frame is configured to rotate with the mobile structure about the first axis in response to the Lorentz forces originating from the first magnetic-field component; and the mobile structure is configured to rotate with respect to the outer frame about the second axis in response to the Lorentz forces originating from the second magnetic-field component.

3. The sensor device according to claim 1 , wherein said first and second elastic elements are of a torsional type.

4. The sensor device according to claim 1 , wherein:
said mobile structure is constituted by a set of nested frames that includes the inner frame, and
said elastic arrangement includes:
a first elastic structure coupled to the electrode structure, and
a second elastic structure coupling the mobile structure to the electrode structure.

5. The sensor device according to claim 4 , further comprising:
second anchorages fixed with respect to said substrate, arranged internally with respect to said inner frame of said mobile structure, and coupled to said first elastic structure; wherein the elastic arrangement includes third elastic elements elastically coupling said mobile structure to the second anchorages.

6. The sensor device according to claim 4 , wherein said electrode structure comprises a first half and a second half; and wherein said first elastic structure comprises an elastic coupling element of a tuning-fork type, configured to elastically couple said first and second halves to generate a corresponding movement in phase opposition in response to the Lorentz forces originating from the third magnetic-field component.

7. The sensor device according to claim 6 , further comprising:
second anchorages fixed with respect to said substrate, arranged internally with respect to said inner frame of said mobile structure, and coupled to said first elastic structure, wherein said elastic coupling element comprises a first half and a second half; and wherein said first elastic structure further comprises an elastic element that elastically couples together said first and second halves of said elastic coupling element, and a further elastic element that elastically couples said first and second halves of said elastic coupling element to said second anchorages.

8. The sensor device according to claim 4 , wherein said second elastic structure comprises a lever element and a decoupling element coupled to the electrode structure; said lever element extending from the inner frame of the mobile structure to the decoupling element, wherein said second elastic structure is configured to enable said mobile structure to rotate with respect to the electrode structure about the second axis in response to the Lorentz forces originating from the second magnetic-field component.

9. The sensor device according to claim 1 , further comprising a conductive path electrically coupled to the electrode structure, the conductive path including a conductive layer arranged on said mobile structure.

10. The sensor device according to claim 9 , wherein said mobile structure includes:
a set of nested frames including the inner frame,
first coupling elements coupling the nested frames together in pairs at corresponding first facing sides, and
second coupling elements coupling the nested frames of the pairs together at corresponding second facing sides; wherein said conductive layer extends as a spiral above said mobile structure, passing from an outermost frame of the nested frames to an innermost frame of the nested frames through a first half of said first coupling elements.

11. The sensor device according to claim 10 , wherein said sensing structure comprises an insulating layer arranged between said mobile structure and said conductive layer.

12. The sensor device according to claim 11 , wherein said conductive path includes two or more distinct loops, nested into one another, on each of said frames of said mobile structure.

13. The sensor device according to claim 10 , wherein a second half of said first coupling elements and said second coupling elements define, between said outermost frame and said innermost frame, a high-resistance path designed to oppose passage of an electric current.

14. The sensor device according to claim 1 , further comprising:
a first pair of sensing electrodes arranged on said substrate and underneath said mobile structure, capacitively coupled to said mobile structure to generate a first differential capacitive variation when the mobile structure rotates about the first axis in response to the Lorentz forces originating from the first magnetic-field component;
a second pair of sensing electrodes arranged on said substrate and underneath said mobile structure, capacitively coupled to said mobile structure to generate a second differential capacitive variation when the mobile structure rotates about the second axis in response to the Lorentz forces originating from the second magnetic-field component; and
a third pair of sensing electrodes capacitively coupled to said electrode structure to generate a differential capacitive variation when the electrode structure experiences translational movement in the first plane in response to the Lorentz forces originating from the third magnetic-field component.

15. The sensor device according to claim 1 , further comprising an electronic circuit, operatively coupled to said sensing structure to generate electrical sensing signals for detection of said first, second, and third magnetic-field components; wherein said sensing structure is monolithic and integrated with said electronic circuit in a die of semiconductor material.

16. An electronic apparatus, comprising:
a sensor device including a sensing structure that includes:
a substrate;
first anchorages fixed with respect to said substrate;
first elastic elements;
an outer frame internally defining a window and elastically coupled to the first anchorages by the first elastic elements;
second elastic elements;
a mobile structure, arranged in the window suspended above said substrate, elastically coupled to sai

Assignees

• St Microelectronics Srl

Inventors

• Laghi Giacomo
• Langfelder Giacomo
• Gattere Gabriele
• Tocchio Alessandro
• Paci Dario

Classifications

• G01R33/0286 Primary

  comprising microelectromechanical systems [MEMS] (MEMS devices in general B81B) · CPC title

• G01R33/02 Primary

  Measuring direction or magnitude of magnetic fields or magnetic flux (G01R33/20 takes precedence) · CPC title

• G01R33/0206 Primary

  Three-component magnetometers · CPC title

• G01R33/007

  Environmental aspects, e.g. temperature variations, radiation, stray fields (G01R33/025 takes precedence) · CPC title

• G01R33/0023

  Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration (G01R33/0017 takes precedence) · CPC title