Semiconductor memory device having a phase change material

Patent metadata

Field	Value
Publication number	US-10700272-B2
Application number	US-201816117718-A
Country	US
Kind code	B2
Filing date	Aug 30, 2018
Priority date	Feb 27, 2018
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

According to one embodiment, the semiconductor memory device includes a first electrode, a first material layer, including a first material, located on the first electrode, a second material, surrounded by the first material of the first material layer, including a phase change material, and a second electrode provided on the first material.

First claim

What is claimed is:

1. A semiconductor memory device, comprising:
a first electrode;
a first layer provided on the first electrode, the first layer including a first material and a plurality of particles of a second material that are arranged in the first material, at least one of the particles of the second material being separated from any other of the particles and entirely surrounded by the first material, the second material containing a phase change material; and
a second electrode provided on the first layer.

2. The semiconductor memory device according to claim 1 , wherein
the second material, upon joule heating thereof, undergoes a phase transition between a first state having a first resistivity and a second state having a second resistivity lower than the first resistivity, and
an electrical resistivity of the first material is higher than the first and second resistivities of the second material.

3. The semiconductor memory device according to claim 1 , wherein a melting point of the first material is higher than a melting point of the second material.

4. The semiconductor memory device according to claim 1 , wherein a thermal conductivity of the first material is lower than a thermal conductivity of the second material.

5. The semiconductor memory device according to claim 1 , wherein the first material contains oxygen or nitrogen.

6. The semiconductor memory device according to claim 1 , wherein
the first material contains a first element,
the second material contains a second element, and
a free energy of formation of oxides or nitrides of the first element is smaller than a free energy of formation of oxides or nitrides of the second element.

7. The semiconductor memory device according to claim 6 , wherein the second material contains tellurium as the second element.

8. The semiconductor memory device according to claim 6 , wherein the first material contains at least one of germanium, silicon, aluminum, cobalt, titanium, tantalum, hafnium, zirconium, and yttrium as the first element.

9. A semiconductor memory device comprising:
a first electrode;
a first layer provided over the first electrode, the first layer including a first material and a plurality of particles of a second material that are arranged in the first material, the first material containing a first element, the second material containing a second element different from the first element; and
a second electrode provided on top of the first layer, wherein
a free energy of formation of oxides or nitrides of the first element is smaller than a free energy of formation of oxide or nitrides of the second element.

10. The semiconductor memory device according to claim 9 , wherein
the second material, upon joule heating thereof, undergoes a phase transition between a first state having a first resistivity and a second state having a second resistivity lower than the first resistivity, and
an electrical resistivity of the first material is higher than the first and second resistivities of the second material.

11. The semiconductor memory device according to claim 9 , wherein a melting point of the first material is higher than a melting point of the second material.

12. The semiconductor memory device according to claim 9 , wherein a thermal conductivity of the first material is lower than a thermal conductivity of the second material.

13. The semiconductor memory device according to claim 9 , wherein the first material contains oxygen or nitrogen.

14. The semiconductor memory device according to claim 9 , wherein the second element comprises tellurium.

15. The semiconductor memory device according to claim 9 , wherein the first element comprises at least one of germanium, silicon, aluminum, cobalt, titanium, tantalum, hafnium, zirconium, and yttrium.

Assignees

• Toshiba Memory Corp

Inventors

• Katono Kazuhiro
• Ishizaki Takeshi
• Sakata Atsuko

Classifications

• H10N70/881

  Switching materials · CPC title

• H10N70/021

  Formation of switching materials, e.g. deposition of layers · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/231 Primary

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title