Photodetector for detecting incoming infrared light

Patent metadata

Field	Value
Publication number	US-10700233-B2
Application number	US-201816150921-A
Country	US
Kind code	B2
Filing date	Oct 3, 2018
Priority date	Oct 4, 2017
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

There is described a photodetector for detecting incoming infrared light. The photodetector generally has a substrate; an i-type semiconductor region extending along the substrate, the i-type semiconductor region being sandwiched between a p-type semiconductor region and an n-type semiconductor region; a grating coupler being optically connected to one of two ends of the i-type semiconductor region, the grating coupler redirecting incoming infrared light into and along the i-type semiconductor region via the one of the two ends of the i-type semiconductor region for propagation of infrared light along the i-type semiconductor region; and a photocurrent detection circuit electrically connected to the p-type semiconductor region and to the n-type semiconductor region for detecting a photocurrent resulting from said propagation.

First claim

What is claimed is:

1. A photodetector comprising: a substrate; an i-type semiconductor region being mounted to the substrate and having a length extending between two longitudinal ends of the i-type semiconductor region, p-type and n-type semiconductor regions being mounted to the substrate and sandwiching the i-type semiconductor region along at least said length; a grating coupler being mounted to the substrate and being optically coupled to one of the two longitudinal ends of the i-type semiconductor region, the grating coupler redirecting incoming light into and along the i-type semiconductor region via the one of the two longitudinal ends of the i-type semiconductor region for propagation of said light along the i-type semiconductor region; and electrical contacts electrically connected to the p-type semiconductor region and to the n-type semiconductor region.

2. The photodetector of claim 1 wherein the grating coupler is a focusing grating coupler being configured for focusing said incoming light into the one of the two longitudinal ends of the i-type semiconductor region.

3. The photodetector of claim 1 wherein at least the substrate, the i-type semiconductor region, and the grating coupler include silicon.

4. The photodetector of claim 3 wherein said length is at least greater than a penetration depth of said light into bulk silicon.

5. The photodetector of claim 1 wherein said length is at least 10 μm, preferably greater than about 25 μm and most preferably greater than about 50 μm.

6. The photodetector of claim 1 wherein the i-type semiconductor region has a width ranging between about 0.3 μm and about 5 μm.

7. The photodetector of claim 1 wherein the p-type semiconductor region has a proximal p+ semiconductor region and a distal p++ semiconductor region, the n-type semiconductor region having a proximal n+ semiconductor region and a distal n++ semiconductor region.

8. The photodetector of claim 1 wherein the i-type semiconductor region is a first i-type semiconductor region, the photodetector further comprising at least a second i-type semiconductor region mounted to the substrate, parallel to the first i-type semiconductor region, and sandwiched between p-type and n-type semiconductor regions.

9. The photodetector of claim 1 wherein the i-type semiconductor region has an absorption window at about 850 nm.

10. An optical receiver comprising:
a substrate;
a photodetector having an i-type semiconductor region being mounted to the substrate and having a length extending between two longitudinal ends of the i-type semiconductor region, p-type and n-type semiconductor regions being mounted to the substrate and sandwiching the i-type semiconductor region along at least said length; a grating coupler being mounted to the substrate and being optically coupled to one of two longitudinal ends of the i-type semiconductor region, the grating coupler redirecting an incoming optical data signal into and along the i-type semiconductor region via the one of the two longitudinal ends of the i-type semiconductor region for propagation of said optical data signal along the i-type semiconductor region; and electrical contacts electrically connected to the p-type semiconductor region and to the n-type semiconductor region; and
an output signal processing circuit being electrically connected to the electrical contacts of the photodetector and being configured for outputting an electrical data signal based on a photocurrent resulting from said propagation.

11. The optical receiver of claim 10 wherein the photodetector and the output signal processing circuit are both made integral to said substrate.

12. The optical receiver of claim 10 wherein the output signal processing circuit has an amplification circuit.

13. The optical receiver of claim 12 wherein the amplification circuit includes a transimpedance amplifier (TIA).

14. The optical receiver of claim 10 wherein the grating coupler is a focusing grating coupler being configured for focusing said incoming light into the one of the two longitudinal ends of the i-type semiconductor region.

15. The optical receiver of claim 10 wherein at least the substrate, the i-type semiconductor region and the grating coupler include silicon.

16. The optical receiver of claim 15 wherein said length is at least greater than a penetration depth of said light into bulk silicon.

17. The optical receiver of claim 10 wherein said length is at least 10 μm, preferably greater than about 25 μm and most preferably greater than about 50 μm.

18. The optical receiver of claim 10 wherein the i-type semiconductor region has a width ranging between about 0.3 μm and about 5 μm.

19. The optical receiver of claim 10 wherein the i-type semiconductor region has an absorption window at about 850 nm.

20. A photodetector for detecting incoming infrared light, the photodetector comprising: a substrate; an i-type semiconductor region extending along the substrate, between two longitudinal ends of the i-type semiconductor region, the i-type semiconductor region being sandwiched between a p-type semiconductor region and an n-type semiconductor region; a grating coupler being optically connected to one of two longitudinal ends of the i-type semiconductor region, the grating coupler redirecting incoming infrared light into and along the i-type semiconductor region via the one of the two longitudinal ends of the i-type semiconductor region for propagation of infrared light along the i-type semiconductor region; and a photocurrent detection circuit electrically connected to the p-type semiconductor region and to the n-type semiconductor region for detecting a photocurrent resulting from said propagation.

Assignees

• The Royal Institution For The Advancement Of Learning/Mcgill Univ
• Valorbec L P

Inventors

• Moayedi Pour Fard Monireh
• Williams Christopher
• Cowan Glenn
• Liboiron-Ladouceur Odile

Classifications

• H10F39/10

  Integrated devices · CPC title

• H10F30/221 Primary

  the potential barrier being a PN homojunction · CPC title

• G01J1/16

  using electric radiation detectors (G01J1/20 takes precedence) · CPC title

• H01L27/144

  Electricity · mapped topic

• H01L31/103 Primary

  Electricity · mapped topic