Spin-orbit torque magnetoresistive random access memory and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10700124-B1
Application number	US-201916411431-A
Country	US
Kind code	B1
Filing date	May 14, 2019
Priority date	Dec 26, 2018
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

A spin-orbit torque magnetoresistive random access memory, and a method for manufacturing a spin-orbit torque magnetoresistive random access memory are provided. The spin-orbit torque magnetoresistive random access memory includes a spin-orbit coupling layer and a magnetoresistive tunnel junction located on the spin-orbit coupling layer. The magnetoresistive tunnel junction includes a first magnetic layer, a tunneling layer, and a second magnetic layer that are sequentially stacked from bottom to top, and each of the first magnetic layer and the second magnetic layer has perpendicular anisotropy. In a direction of a current in the spin-orbit coupling layer, defects are generated in a part of the magnetoresistive tunnel junction by an ion implantation process.

First claim

The invention claimed is:

1. A spin-orbit torque magnetoresistive random access memory, comprising:
a spin-orbit coupling layer; and
a magnetoresistive tunnel junction located on the spin-orbit coupling layer, wherein
the magnetoresistive tunnel junction comprises a first magnetic layer, a tunneling layer, and a second magnetic layer that are sequentially stacked from bottom to top, and each of the first magnetic layer and the second magnetic layer has perpendicular anisotropy; and
in a direction of a current in the spin-orbit coupling layer, defects are generated in a part of the magnetoresistive tunnel junction by an ion implantation process.

2. The spin-orbit torque magnetoresistive random access memory according to claim 1 , wherein ions implanted in the ion implantation process comprise N, As, Ar, Be or P.

3. The spin-orbit torque magnetoresistive random access memory according to claim 2 , wherein a greater number of defects among the generated defects in the magnetoresistive tunnel junction are distributed in the first magnetic layer and the second magnetic layer than other layers in the magnetoresistive tunnel junction.

4. The spin-orbit torque magnetoresistive random access memory according to claim 1 , wherein the magnetoresistive tunnel junction further comprises a pinning layer located on the second magnetic layer and a protective layer located on the pinning layer.

5. The spin-orbit torque magnetoresistive random access memory according to claim 4 , wherein a greater number of defects among the generated defects in the magnetoresistive tunnel junction are distributed in the first magnetic layer and the second magnetic layer than other layers in the magnetoresistive tunnel junction.

6. The spin-orbit torque magnetoresistive random access memory according to claim 1 , wherein a greater number of defects among the generated defects in the magnetoresistive tunnel junction are distributed in the first magnetic layer and the second magnetic layer than other layers in the magnetoresistive tunnel junction.

7. The spin-orbit torque magnetoresistive random access memory according to claim 1 , wherein each of the first magnetic layer and the second magnetic layer is made of Co, Fe, CoFeB or FePt.

8. A method for manufacturing a spin-orbit torque magnetoresistive random access memory, the method comprising:
providing a substrate;
forming a spin-orbit coupling layer on the substrate;
forming a magnetoresistive tunnel junction on the spin-orbit coupling layer, wherein the magnetoresistive tunnel junction comprises a first magnetic layer, a tunneling layer, and a second magnetic layer that are sequentially stacked from bottom to top, and each of the first magnetic layer and the second magnetic layer has perpendicular anisotropy; and
generating defects in a part of the magnetoresistive tunnel junction in a direction of a current in the spin-orbit coupling layer by an ion implantation process.

9. The method according to claim 8 , wherein the generating defects in a part of the magnetoresistive tunnel junction in a direction of a current in the spin-orbit coupling layer by an ion implantation process comprises:
forming a mask layer on a surface of a part of the magnetoresistive tunnel junction in the direction of the current in the spin-orbit coupling layer;
generating the defects in a part of the magnetoresistive tunnel junction which is not covered with the mask layer by the ion implantation process; and
removing the mask layer.

10. The method according to claim 9 , wherein ions implanted in the ion implantation process comprise N, As, Ar, Be or P.

11. The method according to claim 8 , wherein the magnetoresistive tunnel junction further comprises a pinning layer located on the second magnetic layer and a protective layer located on the pinning layer.

12. The method according to claim 8 , wherein each of the first magnetic layer and the second magnetic layer is made of Co, Fe, CoFeB or FePt.

Assignees

• Inst Of Microelectronics Cas

Inventors

• Yang Meiyin
• Luo Jun
• Yang Tengzhi
• Xu Jing

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10N50/80 Primary

  Constructional details · CPC title

• H10B61/10 Primary

  comprising components having two electrodes, e.g. diodes or MIM elements · CPC title