Method for oxidizing a silicon carbide based on microwave plasma at an AC voltage

Patent metadata

Field	Value
Publication number	US-10699898-B2
Application number	US-201916287902-A
Country	US
Kind code	B2
Filing date	Feb 27, 2019
Priority date	Nov 13, 2018
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.

First claim

What is claimed is:

1. A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including:
step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device;
step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage;
step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue;
step four, stopping the introduction of the oxygen-containing gas, completing the reaction;
wherein the AC voltage comprises a square wave voltage having a period of 10-30 s and a voltage amplitude of 5-10 V.

2. The method according to claim 1 , wherein a reaction temperature of the oxygen plasma and the silicon carbide is 500 to 900 ° C., and a reaction pressure thereof is 400 to 1000 mTorr.

3. The method according to claim 1 , wherein the oxygen plasma is heated to a reaction temperature at a rate of 0.5 to 2 ° C./s.

4. The method according to claim 1 , wherein the microwave plasma generating device has an input power of 800 to 2000 W and a microwave frequency of 2.4 to 2.5 GHz.

5. The method according to claim 1 , wherein a total discharge time for the plasma is 400 to 1000 s.

6. The method according to claim 1 , wherein the oxygen-containing gas comprises pure oxygen, or a mixture of oxygen gas and inert gas where oxygen content in the mixture is preferably 30 to 90 vol.%.

7. The method according to claim 1 , wherein the resulted silicon dioxide has a thickness of 1 to 60 nm.

8. The method according to claim 1 , wherein upon completion of the reaction, nitrogen gas is introduced for cooling in the nitrogen atmosphere.

Assignees

• Inst Of Microelectronics Cas
• Inst Of Microelectroniics Chinese Academy Of Sciences

Inventors

• Liu Xinyu
• Wang Shengkai
• Bai Yun
• Tang Yidan
• Han Zhonglin
• Tian Xiaoli
• Chen Hong
• Yang Chengyue

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6308 Primary

  of Group IV semiconductors · CPC title

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H10P14/6304 Primary

  Formation by oxidation, e.g. oxidation of the substrate · CPC title

• H01J37/32192 Primary

  Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title