Field-effect tunable epsilon-near-zero absorber

Patent metadata

Field	Value
Publication number	US-10698134-B2
Application number	US-201815977686-A
Country	US
Kind code	B2
Filing date	May 11, 2018
Priority date	May 11, 2017
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

The present disclosure provides a system and method for a tunable ENZ material that can vary the absorption of radiant energy. The tunable ENZ material can act as a broadband absorber advantageously using a stack of ultrathin conducting layers having an epsilon-near-zero (ENZ) regime of permittivity at different wavelengths. The conducting materials can include at least partially transparent conducting oxide or transition metal nitride layers with different electron concentrations and hence different ENZ frequencies for a broadband range of energy absorption. The layer(s) can be directly tuned to various frequencies to achieve high levels of absorption at deep subwavelength ENZ thicknesses. An applied electric bias can create electron accumulation/depletion regions in an ENZ semiconductor device and allows control of plasma frequency and hence high levels of absorption in the device. Further, for a stack of layers, the carrier concentration can be altered from layer to layer.

First claim

What is claimed is:

1. An electronic device, comprising:
at least one layer of a conducting material having a thickness relative to a thickness of a space charge region for the conducting material that is configured to create an epsilon-near-zero (ENZ) regime of permittivity of perfect absorption at a given wavelength from incidence light from a single direction and configured to be tunable to vary the permittivity with applied electrical bias,
wherein the at least one layer of the conducting material having the thickness relative to the thickness of the space charge region comprises a 8:1 ratio or less.

2. The device of claim 1 , wherein conducting material comprises at least one partially transparent semiconductor material doped with a metal or semi-metal to form a carrier concentration in the material for the epsilon-near-zero (ENZ) regime of permittivity.

3. The device of claim 1 , wherein the semiconductor material comprises at least one layer of at least one of a transparent conducting oxide (“TOO”) material or a transition metal nitride material.

4. The device of claim 1 , wherein the device comprises at least two layers with different carrier concentrations.

5. The device of claim 1 , wherein the device comprises at least two layers with different ENZ regimes.

6. The device of claim 1 , further comprising an oxide layer coupled to the at least one layer, and a metal layer coupled to the oxide layer distal from the at least one layer to form metal oxide semiconductor (MOS) configuration.

7. The device of claim 6 , wherein the MOS configuration is tunable to absorb frequencies of light by application of electrical bias to the MOS configuration.

8. The device of claim 1 , wherein the device further comprises a metal reflector coupled to the at least one layer.

9. The device of claim 1 , wherein the device further comprises a high-index material configured to receive light prior to the at least one layer.

10. An electronic device, comprising:
a stack of a plurality of conducting layers having an epsilon-near-zero (ENZ) regime of permittivity at a given wavelength with at least two of the layers having different ENZ regimes and configured to absorb light at different frequencies, at least one of the plurality of conducting layers having a thickness relative to a thickness of a space charge region for the conducting material that is configured to create an epsilon-near-zero (ENZ) regime of permittivity of perfect absorption at a given wavelength of light from a single direction and configured to be tunable to vary the permittivity with applied electrical bias
wherein the at least one of the plurality of conducting layers having the thickness relative to the thickness of the space charge region comprises a 8:1 ratio or less.

11. The device of claim 10 , wherein at least one of the plurality of layers comprises a semiconductor material doped with at least one metal or semi-metal to form a carrier concentration.

12. The device of claim 10 , wherein the device is tunable to different permittivities by application of electrical bias to the device.

13. The device of claim 10 wherein the device further comprises a metal reflector coupled to the at least one layer.

14. The device of claim 10 wherein the device further comprises a high-index material configured to receive light prior to the at least one layer.

15. The device of claim 10 , further comprising an oxide layer coupled to the at least one layer, and a metal layer coupled to the oxide layer distal from the at least one layer to form metal oxide semiconductor (MOS) configuration.

16. The device of claim 15 , wherein the MOS configuration is tunable to absorb different frequencies of light by application of electrical bias to the MOS configuration.

17. A method of using an electronic device having at least one layer of a conducting material having a thickness relative to a thickness of a space charge region for the conducting material that is configured to create an epsilon-near-zero (ENZ) regime of permittivity of perfect absorption at a given wavelength,
wherein the at least one layer of the conducting material having the thickness relative to the thickness of the space charge region comprises a 8:1 ratio or less, the method comprising:
applying electrical bias to the device; and
tuning the device to absorb various frequencies of light.

18. The method of claim 17 , wherein at least one layer comprises semiconductor material doped with a metal or semi-metal to form a carrier concentration in the material for an epsilon-near-zero (ENZ) regime of permittivity of perfect absorption at a given wavelength.

19. The method of claim 17 , wherein the device comprises at least two layers with different ENZ regimes, and further comprising absorbing different frequencies of incidence light passing through the at least two layers.

20. The device of claim 1 , wherein the at least one of the plurality of conducting layers having the thickness relative to the thickness of the space charge region comprises a 5:1 ratio or less.

21. The device of claim 10 , wherein the at least one of the plurality of conducting layers having the thickness relative to the thickness of the space charge region comprises a 5:1 ratio or less.

Assignees

• Univ Baylor

Inventors

• Anopchenko Oleksiy
• Lee Ho Wai Howard

Classifications

• H10F10/163

  comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title

• G02F1/015 Primary

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• G02F2203/10

  plasmon · CPC title

• G02F1/0155

  modulating the optical absorption · CPC title