Gas sensor device, gas measuring equipment, and method for fabricating gas sensor device

Patent metadata

Field	Value
Publication number	US-10697925-B2
Application number	US-201715668422-A
Country	US
Kind code	B2
Filing date	Aug 3, 2017
Priority date	Aug 8, 2016
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.

First claim

What is claimed is:

1. A gas sensor device comprising:
a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope;
a substrate over which the crystalline film of the copper(I) bromide is provided; and
a layer containing copper oxide and positioned between the substrate and the crystalline film of the copper(I) bromide.

2. The gas sensor device as claimed in claim 1 , further comprising:
a pair of electrode films formed over the substrate,
wherein the crystalline film of the copper(I) bromide overlaps the electrode films, and the layer containing copper oxide is positioned between the crystalline film of copper(I) bromide and the electrode films.

3. A gas sensor device comprising:
a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope;
an electrode partially covered by the crystalline film of copper(I) bromide; and
a layer containing copper oxide and positioned between the electrode and the crystalline film of the copper(I) bromide.

4. The gas sensor device as claimed in claim 1 , wherein the layer containing copper oxide contains copper(I) oxide and copper(II) oxide.

5. The gas sensor device as claimed in claim 4 , wherein the layer containing copper oxide contains the copper(II) oxide as a main part and has the copper(I) oxide in the vicinity of a top surface of the layer.

6. The gas sensor device as claimed in claim 3 , wherein the layer containing copper oxide contains copper(I) oxide and copper(II) oxide.

7. The gas sensor device as claimed in claim 6 , wherein the layer containing copper oxide contains the copper(II) oxide as a main part and has the copper(I) oxide in the vicinity of a top surface of the layer.

8. The gas sensor device as claimed in claim 1 , wherein the crystal surface of the copper(I) bromide has a (111) plane as a dominant crystal plane.

9. The gas sensor device as claimed in claim 1 wherein the stepped terrace has two or more flat faces, and a dihedral angle between two of the flat faces is at 71 degrees.

10. The gas sensor device as claimed in claim 1 , wherein a selectivity ratio of the crystalline film of copper(I) bromide with respect to hydrogen sulfide gas to ammonia gas is one to twenty.

11. The gas sensor device as claimed in claim 1 , wherein a dimension across the flat face of the stepped terrace ranges from 100 nm to 1000 nm.

12. A gas measuring equipment comprising:
a measuring chamber;
a gas sensor device provided in the measuring chamber, the gas sensor device having a crystalline film of copper(I) bromide; and
a resistance measuring device connected to the gas sensor device,
wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope, and
wherein the gas sensor device further has a substrate over which the crystalline film of the copper(I) bromide is provided, and a layer containing copper oxide and positioned between the substrate and the crystalline film of the copper(I) bromide.

Assignees

• Fujitsu Ltd

Inventors

• Momose Satoru
• Ushigome Michio
• Tsuboi Osamu

Classifications

• G01N27/125 Primary

  Composition of the body, e.g. the composition of its sensitive layer · CPC title

• G01N27/4075 Primary

  Composition or fabrication of the electrodes and coatings thereon, e.g. catalysts · CPC title

• C01G3/02

  Oxides; Hydroxides · CPC title

• C01G3/04

  Halides · CPC title