Multispectral optical sensor and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10697828-B2
Application number	US-201815873845-A
Country	US
Kind code	B2
Filing date	Jan 17, 2018
Priority date	Jul 17, 2015
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

A multispectral optical sensor is disclosed. In one embodiment, the multispectral optical sensor includes a piezoelectric material, a first sensing layer and a second sensing layer spaced apart from each other on the piezoelectric material and configured to change the propagation speed of the acoustic wave propagated through the piezoelectric material by receiving ultraviolet light and visible light, respectively. The multiple optical sensor further includes a first acoustic wave output part and a second acoustic wave output part disposed on the piezoelectric material respectively corresponding to the first and second sensing layers and configured to generate an electrical signal based on the changed acoustic wave. The multiple optical sensor measures the intensity of ultraviolet and visible light using a single sensor by detecting the change in frequency, and measures the frequency change in the acoustic wave using zinc oxide, gallium nitride), or cadmium sulfide nanoparticles.

First claim

What is claimed is:

1. A multispectral optical sensor comprising:
a piezoelectric material;
a first sensing layer and a second sensing layer spaced apart from each other on the piezoelectric material and configured to change a propagation speed of an acoustic wave through the piezoelectric material upon receiving ultraviolet light and visible light, respectively; and
a first acoustic wave output part and a second acoustic wave output part disposed on the piezoelectric material and respectively corresponding to the first and second sensing layers, wherein each of the first acoustic wave output part and the second acoustic wave output part is configured to generate an electrical signal based on the changed propagation speed of the acoustic wave.

2. The optical sensor of claim 1 , further comprising an acoustic wave input part disposed between the first and second sensing layers and configured to provide the same acoustic wave to each of the first and second sensing layers.

3. The optical sensor of claim 2 , wherein the first and second acoustic wave output parts are arranged to oppose the acoustic wave input part with respect to the first and second sensing layers.

4. The optical sensor of claim 2 , wherein the acoustic wave input part comprises an interdigital transducer formed through aluminum (Al) deposition.

5. The optical sensor of claim 1 , further comprising a first acoustic wave input part and a second acoustic wave input part disposed on the piezoelectric material and configured to respectively provide a first acoustic wave and a second acoustic wave to the first and second sensing layers.

6. The optical sensor of claim 5 , wherein the first and second acoustic wave output parts are opposing the first and second acoustic wave input parts with respect to the first and second sensing layers, respectively.

7. The optical sensor of claim 5 , wherein the first and second acoustic wave input parts are configured to respectively provide the first and second acoustic waves having frequencies different from each other.

8. The optical sensor of claim 1 , wherein the first sensing layer is configured to change, upon sensing ultraviolet radiation, a speed of the acoustic wave passing through a lower end thereof by changing a electrical conductivity thereof.

9. The optical sensor of claim 8 , wherein the first sensing layer comprises a coating of zinc oxide (ZnO) or gallium nitride (GaN) nanoparticles on the first acoustic wave output part and the piezoelectric material.

10. The optical sensor of claim 1 , wherein the second sensing layer is configured to change, upon sensing a visible light, a speed of the acoustic wave passing through a lower end thereof by changing a electrical conductivity thereof.

11. The optical sensor of claim 10 , wherein the second sensing layer comprises a coating of cadmium sulfide (CdS) nanoparticles on the second acoustic wave output part and the piezoelectric material.

12. The optical sensor of claim 10 , wherein the first and second sensing layers are configured to improve electric or mechanical properties by annealing the spin-coated first and second sensing layers.

13. The optical sensor of claim 1 , wherein the piezoelectric material is disposed at a lower end of the first and second sensing layers, the acoustic waver input part, and the first and second acoustic wave output parts, and an acoustic wave passes through an upper end thereof.

14. A method for manufacturing a multispectral optical sensor, comprising:
preparing a piezoelectric material;
forming an interdigital transducer pattern, including a photosensitive area and a non-photosensitive area, on the piezoelectric material using a photoresist;
depositing a thin film on the piezoelectric material in which the interdigital transducer pattern is formed;
forming a first acoustic wave output part and a second acoustic wave output part by stripping the photosensitive region so as to remove the photoresist and the thin film deposited on the photoresist;
forming a first sensing layer by spin-coating of the piezoelectric material in the direction of the first acoustic wave output part, among the piezoelectric material from which the photoresist is removed, with zinc oxide (ZnO) or gallium nitride (GaN); and
forming a second sensing layer by spin-coating of the piezoelectric material in the direction of the second acoustic wave output part, among the piezoelectric material from which the photoresist is removed, with cadmium sulfide (CdS).

15. The method of claim 14 , wherein the first and second sensing layers are formed on the same layer.

Assignees

• Korea Electronics Technology

Inventors

• Kim Kunnyun
• Kwak Yeon Hwa
• Oh Hae Kwan

Classifications

• H10F77/12

  Active materials · CPC title

• H10F39/10

  Integrated devices · CPC title

• H10F30/10

  the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors · CPC title

• G01V8/00

  Prospecting or detecting by optical means · CPC title

• G01J5/44

  using change of resonant frequency, e.g. of piezoelectric crystals · CPC title